Zobrazeno 1 - 10
of 131
pro vyhledávání: '"Santanu Mahapatra"'
Autor:
Sanchali Mitra, Santanu Mahapatra
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-14 (2024)
Abstract In-memory computing technology built on 2D material-based nonvolatile resistive switches (aka memristors) has made great progress in recent years. It has however been debated whether such remarkable resistive switching is an inherent propert
Externí odkaz:
https://doaj.org/article/12f5ee178f6f4d9ebeaab71d72a134ef
Autor:
Arnab Kabiraj, Santanu Mahapatra
Publikováno v:
npj Computational Materials, Vol 9, Iss 1, Pp 1-12 (2023)
Abstract Magnetic skyrmions, which are topologically protected tiny spin textures, have emerged as information carriers in energy-efficient logic and memory devices. Skyrmions are commonly realized by inducing large Dzyaloshinskii–Moriya interactio
Externí odkaz:
https://doaj.org/article/c07774442dfe4ecebf36cfe50eedbaeb
Publikováno v:
npj Computational Materials, Vol 8, Iss 1, Pp 1-13 (2022)
Abstract Two-dimensional material-based transistors are being extensively investigated for CMOS (complementary metal oxide semiconductor) technology extension; nevertheless, downscaling appears to be challenging owing to high metal-semiconductor cont
Externí odkaz:
https://doaj.org/article/19ffb98003f242bab141060dfaa9b721
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-11 (2021)
Abstract Resistive-memory devices promise to revolutionize modern computer architecture eliminating the data-shuttling bottleneck between the memory and processing unit. Recent years have seen a surge of experimental demonstrations of such devices bu
Externí odkaz:
https://doaj.org/article/2402eb2621c8466d9c9bffa7ece879cd
Autor:
Arup Kumar Paul, Manabendra Kuiri, Dipankar Saha, Biswanath Chakraborty, Santanu Mahapatra, A. K Sood, Anindya Das
Publikováno v:
npj 2D Materials and Applications, Vol 1, Iss 1, Pp 1-7 (2017)
p–n junctions: unusual transfer characteristic p–n heterojunctions based on certain two-dimensional transition metal dichalcogenides display an unusual dip in the current–voltage characteristic. A team led by Anindya Das at the Indian Institute
Externí odkaz:
https://doaj.org/article/80eb8ded0b854930a3ba94bfc5279213
Autor:
Ram Krishna Ghosh, Santanu Mahapatra
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 1, Iss 10, Pp 175-180 (2013)
We investigate the gate controlled direct band-to-band tunneling (BTBT) current in monolayer transition-metal dichalcogenide (MX2) channel-based tunnel field effect transistor (TFET). Five MX2 materials (MoS2,MoSe2,MoTe2,WS2,WSe2) in their 2-D sheet
Externí odkaz:
https://doaj.org/article/19795a80412a4f48b91debf9e7b9802b
Publikováno v:
AIP Advances, Vol 5, Iss 2, Pp 029901-029901-1 (2015)
Externí odkaz:
https://doaj.org/article/814550af3ae24716afbcfa9f19b560fe
Publikováno v:
AIP Advances, Vol 5, Iss 2, Pp 027101-027101-9 (2015)
In this paper we show the effect of electron-phonon scattering on the performance of monolayer (1L) MoS2 and WSe2 channel based n-MOSFETs. Electronic properties of the channel materials are evaluated using the local density approximation (LDA) in den
Externí odkaz:
https://doaj.org/article/f06ec53d68bd47de8383a0bf58e85a53
Publikováno v:
ACS Applied Materials & Interfaces. 15:3182-3191
The two-dimensional network of boron atoms (borophene) has attracted attention for its ultralow molar mass and remarkable polymorphism. Synthesized polymorphs of borophene (striped, β
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1bb49c3460eb8d64f3d392e8ba0fb717
https://doi.org/10.1021/acsami.2c20055
https://doi.org/10.1021/acsami.2c20055
Publikováno v:
The Journal of Physical Chemistry C. 126:8605-8614
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f3e7ecec09774a1e1f742157297e283
https://doi.org/10.1021/acs.jpcc.2c02727
https://doi.org/10.1021/acs.jpcc.2c02727