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pro vyhledávání: '"Sansig Kim"'
Autor:
Faraz Najam, Sungwoo Hwang, Kyoung Hwan Yeo, Jong Seung Hwang, Dong-Won Kim, Keun Hwi Cho, Yun Seop Yu, Sansig Kim
Publikováno v:
IEEE Transactions on Electron Devices. 60:2457-2463
Si/SiO2 interface trap charge distribution of cylindrical cross-sectioned gate-all-around silicon nanowire field-effect transistor is extracted by using three-dimensional simulation. While the interface chemistry of conventional gatestack ( Si/SiO2 p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7822e8e041076fa30be8aeef7a9c5e7
https://doi.org/10.1109/ted.2013.2268193
https://doi.org/10.1109/ted.2013.2268193
