Zobrazeno 1 - 10
of 1 037
pro vyhledávání: '"Sanquer A"'
Autor:
Stéphanie Chasseigneaux, Véronique Cochois-Guégan, Lucas Lecorgne, Murielle Lochus, Sophie Nicolic, Corinne Blugeon, Laurent Jourdren, David Gomez-Zepeda, Stefan Tenzer, Sylvia Sanquer, Valérie Nivet-Antoine, Marie-Claude Menet, Jean-Louis Laplanche, Xavier Declèves, Salvatore Cisternino, Bruno Saubaméa
Publikováno v:
Fluids and Barriers of the CNS, Vol 21, Iss 1, Pp 1-18 (2024)
Abstract Background The blood-brain barrier (BBB) is pivotal for the maintenance of brain homeostasis and it strictly regulates the cerebral transport of a wide range of endogenous compounds and drugs. While fasting is increasingly recognized as a po
Externí odkaz:
https://doaj.org/article/c599c5fb554f48afb4044b32a611907c
Autor:
Fersing, C., Thevarajah, D., Sanquer, E., Chapuis, C., Amelot, A., Fougeron, C., Aljancic, L., Picard, A., Kadlub, N.
Publikováno v:
In Journal of Stomatology oral and Maxillofacial Surgery September 2024 125(5) Supplement 1
Autor:
Ezzouch, Rami, Zihlmann, Simon, Michal, Vincent P., Li, Jing, Aprá, Agostino, Bertrand, Benoit, Hutin, Louis, Vinet, Maud, Urdampilleta, Matias, Meunier, Tristan, Jehl, Xavier, Niquet, Yann-Michel, Sanquer, Marc, De Franceschi, Silvano, Maurand, Romain
Publikováno v:
Phys. Rev. Applied 16, 034031 (2021)
Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will hav
Externí odkaz:
http://arxiv.org/abs/2012.15588
Autor:
Barbier, H., Redouloux, L., Chapuis-Vandenbogaerde, C., Picard, A., Amelot, A., Fougeron, C., Sanquer, E., Kadlub, N.
Publikováno v:
In Journal of Stomatology oral and Maxillofacial Surgery September 2024
Autor:
Chanrion, Emmanuel, Niegemann, David J., Bertrand, Benoit, Spence, Cameron, Jadot, Baptiste, Li, Jing, Mortemousque, Pierre-André, Hutin, Louis, Maurand, Romain, Jehl, Xavier, Sanquer, Marc, De Franceschi, Silvano, Bäuerle, Christopher, Balestro, Franck, Niquet, Yann-Michel, Vinet, Maud, Meunier, Tristan, Urdampilleta, Matias
Publikováno v:
Phys. Rev. Applied 14, 024066 (2020)
The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One
Externí odkaz:
http://arxiv.org/abs/2004.01009
Autor:
Hutin, L., Bertrand, B., Chanrion, E., Bohuslavskyi, H., Ansaloni, F., Yang, T. -Y., Michniewicz, J., Niegemann, D. J., Spence, C., Lundberg, T., Chatterjee, A., Crippa, A., Li, J., Maurand, R., Jehl, X., Sanquer, M., Gonzalez-Zalba, M. F., Kuemmeth, F., Niquet, Y. -M., De Franceschi, S., Urdampilleta, M., Meunier, T., Vinet, M.
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM)
We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based reado
Externí odkaz:
http://arxiv.org/abs/1912.10884
Autor:
Bourdet, Léo, Hutin, Louis, Bertrand, Benoit, Corna, Andrea, Bohuslavskyi, Heorhii, Amisse, Anthony, Crippa, Alessandro, Maurand, Romain, Barraud, Sylvain, Urdampilleta, Matias, Bäuerle, Christopher, Meunier, Tristan, Sanquer, Marc, Jehl, Xavier, De Franceschi, Silvano, Niquet, Yann-Michel, Vinet, Maud
Publikováno v:
IEEE Transactions on Electron Devices ( Volume: 65 , Issue: 11 , Nov. 2018 )
We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss tha
Externí odkaz:
http://arxiv.org/abs/1912.11403
Autor:
Vinet, M., Hutin, L., Bertrand, B., Barraud, S., Hartmann, J. -M., Kim, Y. -J., Mazzocchi, V., Amisse, A., Bohuslavskyi, H., Bourdet, L., Crippa, A., Jehl, X., Maurand, R., Niquet, Y. -M., Sanquer, M., Venitucci, B., Jadot, B., Chanrion, E., Mortemousque, P. -A., Spence, C., Urdampilleta, M., De Franceschi, S., Meunier, T.
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM)
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the b
Externí odkaz:
http://arxiv.org/abs/1912.09807
Autor:
Hutin, L., Maurand, R., Kotekar-Patil, D., Corna, A., Bohuslavskyi, H., Jehl, X., Barraud, S., De Franceschi, S., Sanquer, M., Vinet, M.
Publikováno v:
2016 IEEE Symposium on VLSI Technology
We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a h
Externí odkaz:
http://arxiv.org/abs/1912.09805
Autor:
Hutin, L., Bourdet, L., Bertrand, B., Corna, A., Bohuslavskyi, H., Amisse, A., Crippa, A., Maurand, R., Barraud, S., Urdampilleta, M., Bäuerle, C., Meunier, T., Sanquer, M., Jehl, X., De Franceschi, S., Niquet, Y. -M., Vinet, M.
Publikováno v:
2018 IEEE Symposium on VLSI Technology
We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI
Externí odkaz:
http://arxiv.org/abs/1912.09806