Zobrazeno 1 - 10
of 338
pro vyhledávání: '"Sanquer, M. A."'
Autor:
Hutin, L., Bertrand, B., Chanrion, E., Bohuslavskyi, H., Ansaloni, F., Yang, T. -Y., Michniewicz, J., Niegemann, D. J., Spence, C., Lundberg, T., Chatterjee, A., Crippa, A., Li, J., Maurand, R., Jehl, X., Sanquer, M., Gonzalez-Zalba, M. F., Kuemmeth, F., Niquet, Y. -M., De Franceschi, S., Urdampilleta, M., Meunier, T., Vinet, M.
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM)
We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based reado
Externí odkaz:
http://arxiv.org/abs/1912.10884
Autor:
Vinet, M., Hutin, L., Bertrand, B., Barraud, S., Hartmann, J. -M., Kim, Y. -J., Mazzocchi, V., Amisse, A., Bohuslavskyi, H., Bourdet, L., Crippa, A., Jehl, X., Maurand, R., Niquet, Y. -M., Sanquer, M., Venitucci, B., Jadot, B., Chanrion, E., Mortemousque, P. -A., Spence, C., Urdampilleta, M., De Franceschi, S., Meunier, T.
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM)
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the b
Externí odkaz:
http://arxiv.org/abs/1912.09807
Autor:
Hutin, L., Maurand, R., Kotekar-Patil, D., Corna, A., Bohuslavskyi, H., Jehl, X., Barraud, S., De Franceschi, S., Sanquer, M., Vinet, M.
Publikováno v:
2016 IEEE Symposium on VLSI Technology
We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a h
Externí odkaz:
http://arxiv.org/abs/1912.09805
Autor:
Hutin, L., Bourdet, L., Bertrand, B., Corna, A., Bohuslavskyi, H., Amisse, A., Crippa, A., Maurand, R., Barraud, S., Urdampilleta, M., Bäuerle, C., Meunier, T., Sanquer, M., Jehl, X., De Franceschi, S., Niquet, Y. -M., Vinet, M.
Publikováno v:
2018 IEEE Symposium on VLSI Technology
We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI
Externí odkaz:
http://arxiv.org/abs/1912.09806
Autor:
Bohuslavskyi, H., Barraud, S., Cassé, M., Barral, V., Bertrand, B., Hutin, L., Arnaud, F., Galy, P., Sanquer, M., De Franceschi, S., Vinet, M.
Publikováno v:
2017 Silicon Nanoelectronics Workshop (SNW), Kyoto, 2017, pp. 143-144
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic ope
Externí odkaz:
http://arxiv.org/abs/2002.07070
Autor:
Maurand, R., Kotekar-Patil, D., Corna, A., Bohuslavskyi, H., Crippa, A., Laviéville, R., Hutin, L., Barraud, S., Vinet, M., De Franceschi, S., Jehl, X., Sanquer, M.
We show how to measure and manipulate a single spin in a CMOS device fabricated in a pre-industrial 300 mm CMOS foundry. The device can be used as a spin quantum bit working at very low temperature. The spin manipulation is done by a microwave electr
Externí odkaz:
http://arxiv.org/abs/1912.09126
Autor:
De Franceschi, S., Hutin, L., Maurand, R., Bourdet, L., Bohuslavskyi, H., Corna, A., Kotekar-Patil, D., Barraud, S., Jehl, X., Niquet, Y. -M., Sanquer, M., Vinet, M.
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4
We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called
Externí odkaz:
http://arxiv.org/abs/1912.08313
Autor:
Bohuslavskyi, H., Barraud, S., Barral, V., Cassé, M., Guevel, L. Le, Hutin, L., Bertrand, B., Crippa, A., Jehl, X., Pillonnet, G., Jansen, A. G. M., Arnaud, F., Galy, P., Maurand, R., De Franceschi, S., Sanquer, M., Vinet, M.
Publikováno v:
IEEE Transactions on Electron Devices ( Volume: 65 , Issue: 9 , Sept. 2018 )
Extensive electrical characterization of ring oscillators (ROs) made in high-$\kappa$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per stage ($\tau_
Externí odkaz:
http://arxiv.org/abs/1903.06021
Autor:
Bohuslavskyi, H., Jansen, A. G. M., Barraud, S., Barral, V., Cassé, M., Guevel, L. Le, Jehl, X., Hutin, L., Bertrand, B., Billiot, G., Pillonnet, G., Arnaud, F., Galy, P., De Franceschi, S., Vinet, M., Sanquer, M.
Publikováno v:
IEEE Electron Device Letters, 5 March 2019
In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by $SS(T) =
Externí odkaz:
http://arxiv.org/abs/1903.05409
Autor:
Crippa, A., Ezzouch, R., Aprá, A., Amisse, A., Houtin, L., Bertrand, B., Vinet, M., Urdampilleta, M., Meunier, T., Sanquer, M., Jehl, X., Maurand, R., De Franceschi, S.
Publikováno v:
Nature Communications 10, 2776 (2019)
Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of
Externí odkaz:
http://arxiv.org/abs/1811.04414