Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Sano, Keiichi"'
Publikováno v:
SID Symposium Digest of Technical Papers. 48:1339-1342
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44be3ad81324668889a72bca659e9dd6
https://doi.org/10.1002/sdtp.11886
https://doi.org/10.1002/sdtp.11886
Autor:
Shinya Tsuda, Shoichi Nakano, Seiichi Kiyama, Hiroshi Iwata, Takashi Kuwahara, Noguchi Shigeru, Tomoyuki Nohda, Hiroyuki Kuriyama, Ishida Satoshi, Sano Keiichi
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
A high-mobility (280 cm/sup 2//V-s), high-throughput poly-Si TFT (thin-film transistor) formed using a low-temperature process ( >
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9cc36a5ff5e99f27d1146aef1bf7248
https://doi.org/10.1109/iedm.1991.235407
https://doi.org/10.1109/iedm.1991.235407
Autor:
Ishida Satoshi, Hiroyuki Kuriyama, Shoichi Nakano, Takashi Kuwahara, Tomoyuki Nohda, Y. Aya, Noguchi Shigeru, Sano Keiichi, Seiichi Kiyama, Shinya Tsuda
Publikováno v:
MRS Proceedings. 321
We have succeeded in obtaining nondoped, thin poly-Si film (thickness ∼500Å) with excellent crystallinity and large grain size (Maximum grain size ∼4.5 μ m) by an excimer laser annealing Method, which offers the features of low-temperature proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0118f98dd1cc599d8d3826686f9f8cd4
https://doi.org/10.1557/proc-321-657
https://doi.org/10.1557/proc-321-657
Autor:
Shinya Tsuda, Tomoyuki Nohda, Sano Keiichi, Hiroyuki Kuriyama, Noguchi Shigeru, Hiroshi Iwata, Shoichi Nakano, Ishida Satoshi, Seiichi Kiyama, Takashi Kuwahara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d53874f576651b27f4b8982371a8eb30
https://doi.org/10.1016/b978-0-7506-9484-1.50066-x
https://doi.org/10.1016/b978-0-7506-9484-1.50066-x
Autor:
Shoichi Nakano, Sano Keiichi, Hiroshi Iwata, Hiroshi Hanafusa, Yukinori Kuwano, Takashi Kuwahara, Keiichi Kiyama, Hiroyuki Kuriyama, Shinya Tsuda, Ishida Satoshi, Tomoyuki Nohda, Noguchi Shigeru
Publikováno v:
MRS Proceedings. 283
The grain size of phosphorous (P)-doped poly-Si film has been enlarged to about 5000 Å by controlling the solidification velocity of molten Si during ArF excimer laser annealing. The drastically enlarged grain has few defects inside the grain. It ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd55ecc92c0c17aabb8cd6457bcd4d91
https://doi.org/10.1557/proc-283-709
https://doi.org/10.1557/proc-283-709
Autor:
Takashi Kuwahara, Noguchi Shigeru, S. Nakano, S. Tsuda, Hiroshi Iwata, Hiroyuki Kuriyama, Tomoyuki Nohda, S. Kiyama, Ishida Satoshi, Sano Keiichi
Publikováno v:
Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::554c450535279d107de4127af6c5315b
https://doi.org/10.7567/ssdm.1991.pc5-8
https://doi.org/10.7567/ssdm.1991.pc5-8
Akademický článek
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Publikováno v:
霊長類研究所年報. 27:101-101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::332ab6dde4a38757e59cc0defce89f4c
http://hdl.handle.net/2433/164908
http://hdl.handle.net/2433/164908
Autor:
Noguchi Shigeru, Sano Keiichi, Shoichi Nakano, Hiroshi Iwata, Ishida Satoshi, Masato Osumi, Yukinori Kuwano, Tomoyuki Nohda, Takashi Kuwahara, Seiichi Kiyama, Hiroyuki Kuriyama, Shinya Tsuda
Publikováno v:
Japanese Journal of Applied Physics. 31:4550
Film uniformity is the main problem when applying laser-recrystallised poly-Si films to thin film transistors (TFTs) in giant micro electronics. However, this has been dramatically improved by a new excimer laser annealing method in which the solidif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::341324270bedd379b957dc8d7256a3d0
https://doi.org/10.1143/jjap.31.4550
https://doi.org/10.1143/jjap.31.4550
Publikováno v:
Cell & Tissue Research; Aug1997, Vol. 289 Issue 3, p473-485, 13p