Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Sanket Sant"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27:631-642
In a typical plasma tool, both etch and deposition occur simultaneously. Extensive experimental measurements are used to help develop a general model of etch and deposition processes. This model employs reaction probabilities, or surface averaged cro
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27:193-208
The densities of radicals and neutrals in fluorocarbon (FC) plasmas have been investigated in an inductively coupled plasma system to understand the predominant gain and loss mechanisms of dissociative products and their interaction with chamber surf
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:545-554
It is well understood that chamber geometry is an influential factor governing plasma processing of materials. Simple models suggest that a large fraction of this influence is due to changes in basic plasma properties, namely, density, temperature, a
Publikováno v:
Plasma Sources Science and Technology. 16:813-821
This paper examines the complex nature of highly polymerizing fluorocarbon plasmas. An inductively coupled modified GEC reference cell is used to look at process rates on SiO2, p-Si and Si3N4 samples using various chamber geometries and gas chemistri
Autor:
Yonghua Liu, Lawrence J. Overzet, Eric A. Joseph, Arun Radhakrishnan, Sanket Sant, Matthew Goeckner, Baosuo Zhou
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 23:1657-1667
The effect of wall temperature, from 50to200°C, on gas phase chemistry and substrate etching rates has been studied in inductively coupled CF4 plasma under two distinctive initial wall conditions, namely “clean” and “seasoned.” During plasma
Autor:
Matthew Goeckner, Sanket Sant, Lawrence J. Overzet, E A Joseph, C. T. Nelson, G. Padron-Wells, B S Zhou, R Pierce, A K Jindal, Brandon C. Jarvis
Publikováno v:
Journal of Physics: Conference Series. 133:012010
Materials processing is at a crossroads. Currently a large fraction of industrially viable materials processing is via plasmas. Until recently it has been economical to just examine the influence the plasma properties on the desired surface processes
Autor:
Sanket Sant, Matthew Goeckner, David W. Gidley, B. E. E. Kastenmeier, Lawrence J. Overzet, Huagen Peng, E. A. Joseph
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25:1684
Porous methylsilsesquioxane-based spin-on films with pore sizes of 1.5–2nm and porosities ranging from 0% to 32% have been exposed to a variety of processing environments such as fluorocarbon or oxygen containing plasmas and TaN atomic layer deposi
Autor:
Sanket Sant, Matthew Goeckner, Gil S. Lee, Li Tao, Lawrence J. Overzet, W. Hu, M. J. Kim, T. H. Lee, Seetharaman Ramachandran
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24:2993
In this work, antiwear nanoimprint templates were made by depositing and patterning diamondlike carbon (DLC) films on Si and quartz. A capacitively coupled plasma enhanced chemical vapor deposition (PECVD) system was configured to deposit 100nm–1μ
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 22:689
Plasma-wall interactions in fluorocarbon based feedgas chemistries, namely CF4, are examined in a standard inductively coupled Gaseous Electronics Conference reference cell using in situ Fourier-transform infrared spectroscopy and microwave interfero