Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Sankara Narayanan Ekkanath Madathil"'
Autor:
Du, Yangming, Sankara Narayanan, Ekkanath Madathil, Kawai, Hiroji, Yagi, Shuichi, Narui, Hironobu
Publikováno v:
Physica Status Solidi. A: Applications & Materials Science; Nov2024, Vol. 221 Issue 21, p1-5, 5p
Autor:
Alireza Sheikhan, Sankara Narayanan Ekkanath Madathil, Hiroji Kawai, Shuichi Yagi, Hironobu Narui
Publikováno v:
Japanese Journal of Applied Physics.
Gallium Nitride (GaN) devices inherently offer many advantages over silicon power devices including higher operating frequency, lower on-state resistance, and higher operating temperature capabilities, which can enable higher power density, more effi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b59bf6b1bf4bb8acafb4b857834e04bf
https://doi.org/10.35848/1347-4065/acd975
https://doi.org/10.35848/1347-4065/acd975
Publikováno v:
IEEE Transactions on Power Electronics. 36:3304-3311
Turn- off dV/dt controllability is an essential feature in insulated gate bipolar transistors (IGBTs) for flexible design in power switching applications. However, the occurrence of dynamic avalanche (DA) during the turn- off transients plays a key r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f607a2bf81a7c37c8a1f706deaeaa27
https://doi.org/10.1109/tpel.2020.3014560
https://doi.org/10.1109/tpel.2020.3014560
Publikováno v:
IEEE Transactions on Electron Devices. 67:5621-5627
In this article, the ON-state performance limits of 4H-silicon carbide (SiC) IGBTs in field-stop technology are theoretically estimated for the first time and compared against silicon counterparts. The theoretical analysis is based on static modeling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7a3955aa50c14ed5d1cf7068ab2720f
https://doi.org/10.1109/ted.2020.3033268
https://doi.org/10.1109/ted.2020.3033268
Publikováno v:
2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia).
In this paper a 1.2 kV, 50 A trench clustered IGBT is experimentally demonstrated in field-stop technology for the first time. Due to the optimized field stop layer design, the off-state leakage current is lower than 1 mA at 175°C. A low on-state vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::748d8f3749ec08c925b744a8720ff116
https://doi.org/10.1109/ecce-asia49820.2021.9479243
https://doi.org/10.1109/ecce-asia49820.2021.9479243
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Dynamic Avalanche (DA) effects in the Super-Junction Trench IGBTs are analyzed through 3-D TCAD simulations for the first time. A DA free solution for high power density and low loss is proposed and demonstrated in detail. Furthermore, simulation res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19e4edbc96c1cf91b06c80ea16182f7e
https://doi.org/10.1109/ispsd46842.2020.9170129
https://doi.org/10.1109/ispsd46842.2020.9170129
It is well-known that the dynamic avalanche (DA) phenomenon poses fundamental limits on the power density, turn-off power loss, dV / dt controllability, and long-term reliability of MOS-bipolar devices. Therefore, overcoming this phenomenon is essent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ff4cc7e4f70c65d26f3bc7edcf4aac3
https://eprints.whiterose.ac.uk/162876/3/TED-DA_final.pdf
https://eprints.whiterose.ac.uk/162876/3/TED-DA_final.pdf
Akademický článek
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Publikováno v:
2020 IEEE Applied Power Electronics Conference and Exposition (APEC).
High dV/dt controllability of IGBT is an important factor for flexible design as well as low switching loss in power electronics systems. However, Dynamic Avalanche (DA) phenomenon poses a fundamental limit on their dV/dt control range, operating cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d71a8d1c98ac768826c3b0232a2bc49
https://doi.org/10.1109/apec39645.2020.9124293
https://doi.org/10.1109/apec39645.2020.9124293