Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Sanjoy Kumar, Nandi"'
Autor:
Sujan Kumar Das, Sanjoy Kumar Nandi, Camilo Verbel Marquez, Armando Rúa, Mutsunori Uenuma, Shimul Kanti Nath, Shuo Zhang, Chun‐Ho Lin, Dewei Chu, Tom Ratcliff, Robert Glen Elliman
Publikováno v:
Advanced Intelligent Systems, Vol 6, Iss 11, Pp n/a-n/a (2024)
Neuromorphic computing implemented with spiking neural networks (SNNs) based on volatile threshold switching is an energy‐efficient computing paradigm that may overcome future limitations of the von Neumann architecture. Herein, threshold switching
Externí odkaz:
https://doaj.org/article/748203e18d87410e94e57ec2c7f07602
Publikováno v:
Nanoscale. 15:7559-7565
The thickness and thermal conductivity of electrodes are shown to have a direct impact on the volatile threshold switching characteristics of NbOx-based memristors due to their effect on the temperature of the active volume.
Autor:
Sanjoy Kumar Nandi, Etienne Puyoo, Shimul Kanti Nath, David Albertini, Nicolas Baboux, Sujan Kumar Das, Thomas Ratcliff, Robert G. Elliman
Publikováno v:
ACS Applied Materials & Interfaces. 14:29025-29031
Autor:
Xiao-Yuan Wang, Chuan-Tao Dong, Peng-Fei Zhou, Sanjoy Kumar Nandi, Shimul Kanti Nath, Robert G. Elliman, Herbert Ho-Ching Iu, Sung-Mo Kang, Jason K. Eshraghian
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 69:2423-2434
Autor:
Sanjoy Kumar Nandi, Sujan Kumar Das, Yubo Cui, Assaad El Helou, Shimul Kanti Nath, Thomas Ratcliff, Peter Raad, Robert G. Elliman
Publikováno v:
ACS Applied Materials & Interfaces. 14:21270-21277
Autor:
Yan Liang, Qian Zhu, Guangyi Wang, Shimul Kanti Nath, Herbert Ho-Ching Iu, Sanjoy Kumar Nandi, Robert Glen Elliman
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 69:1278-1290
Autor:
Sujan Kumar, Das, Sanjoy Kumar, Nandi, Camilo Verbel, Marquez, Armando, Rúa, Mutsunori, Uenuma, Etienne, Puyoo, Shimul Kanti, Nath, David, Albertini, Nicolas, Baboux, Teng, Lu, Yun, Liu, Tobias, Haeger, Ralf, Heiderhoff, Thomas, Riedl, Thomas, Ratcliff, Robert Glen, Elliman
Publikováno v:
Advanced materials (Deerfield Beach, Fla.).
Oxides that exhibit an insulator-metal transition can be used to fabricate energy-efficient relaxation oscillators for use in hardware-based neural networks but there are very few oxides with transition temperatures above room temperature. Here the s
Publikováno v:
ACS Applied Materials & Interfaces. 13:2845-2852
Two terminal metal-oxide-metal devices based on niobium oxide thin films exhibit a wide range of non-linear electrical characteristics that have applications in hardware-based neuromorphic computing. In this study, we compare the threshold-switching
Autor:
Assaad El-Helou, Robert Elliman, Shimul Kanti Nath, Peter E. Raad, Thomas Ratcliff, Sanjoy Kumar Nandi, Xinjun Liu, Shuai Li
Publikováno v:
Physical Review Applied. 13
The negative-differential-resistance (NDR) response of $\mathrm{Nb}$/${\mathrm{Nb}\mathrm{O}}_{x}$/$\mathrm{Pt}$ cross-point devices is shown to have a polarity dependence due to the effect of the metal-oxide Schottky barriers on the contact resistan
Autor:
Sanjoy Kumar Nandi, Robert Elliman, Mutsunori Uenuma, Assaad El-Helou, Thomas Ratcliff, Shuai Li, Shimul Kanti Nath, Peter E. Raad
Publikováno v:
ACS applied materialsinterfaces. 12(7)
Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here we use a simple photoresist-based detection technique to map the spatial distribution of conduct