Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Sanjib Kabi"'
Autor:
Priyanka Kumari, Aashish Sharma, Ashok Kumawat, Susruta Samanta, Kamakhya Prakash Misra, Ashok Rao, Sanjib Kabi, Saikat Chattopadhyay
Publikováno v:
Materials Today: Proceedings. 58:642-647
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af0a98c6f354e514da12c82c618db2a0
https://doi.org/10.1016/j.matpr.2022.01.353
https://doi.org/10.1016/j.matpr.2022.01.353
Publikováno v:
Materials Today: Proceedings. 58:653-655
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d7dfc0ff399238eda7547aa70cf55c8
https://doi.org/10.1016/j.matpr.2022.02.061
https://doi.org/10.1016/j.matpr.2022.02.061
Publikováno v:
Advances in Communication, Devices and Networking ISBN: 9789811629105
We propose theoretical modeling to interpret the experimental transmittance as a function of wavelength (λ) of amorphous or crystalline semiconductors and dielectric thin films for optoelectronic device applications. The presented model reproduces t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::455de51529bdc172ac013b01ae07a7f9
https://doi.org/10.1007/978-981-16-2911-2_8
https://doi.org/10.1007/978-981-16-2911-2_8
Autor:
Kamakhya Prakash Misra, Ashok Kumawat, Atul Bandopadhyay, Brindaban Modak, S.K. Mukherjee, P.D. Babu, Sanjib Kabi, Saikat Chattopadhyay, R.D.K. Misra
Publikováno v:
Materials Science and Engineering: B. 282:115761
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88d873f0f959a5ac5c3e1d6f661667e5
https://doi.org/10.1016/j.mseb.2022.115761
https://doi.org/10.1016/j.mseb.2022.115761
Autor:
Sanjib Kabi
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789813344884
A terahertz photodetector receives terahertz frequency in the range of ~0.3 to ~30 THz from a source in the input terminal and transforms the input signal, typically into an electrical signal. In general, a terahertz detector can be able to different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b005472faeac5e0eeb1a2a637fc4b52
https://doi.org/10.1007/978-981-33-4489-1_6
https://doi.org/10.1007/978-981-33-4489-1_6
Publikováno v:
ADVANCED MATERIALS AND RADIATION PHYSICS (AMRP-2020): 5th National e-Conference on Advanced Materials and Radiation Physics.
A complete theoretical model is presented in this paper to study the quantum confinement and its effect on optical transitions in a CdS/ZnS core-shell quantum dot. The effect of dot size variation and size distribution on the optical transition in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b39930375f471ff7fc5060f61978026
https://doi.org/10.1063/5.0052365
https://doi.org/10.1063/5.0052365
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 1080:012012
We report the effect of shell thickness on exciton and biexciton binding energy calculation for a CdSe/ZnSe core shell quantum dot. Wentzel Kramers Brillouin approximation help us to create proper wave function for the system. It incorporates core sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d94653aa0e4c83073626e51d6264fc1
https://doi.org/10.1088/1757-899x/1080/1/012012
https://doi.org/10.1088/1757-899x/1080/1/012012
Autor:
Sanjib Kabi, Dhrubes Biswas, Rahul Kumar, Palash Das, Ankush Bag, Partha Mukhopadhyay, Shubhankar Majumdar
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 74:59-64
A double quantum well (QW) based nitride HEMT has been conceptualized through numerical simulation of Schrodinger and Poisson's equations for enhancement mode operation by introduction of a deeper secondary QW along with primary AlGaN/GaN triangular
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3a1c10e668fff49b00876cbef23f85a
https://doi.org/10.1016/j.physe.2015.06.011
https://doi.org/10.1016/j.physe.2015.06.011
Autor:
Pallab Banerji, Sanjib Kabi, Ankush Bag, Rahul Kumar, Apurba Chakraborty, Partha Mukhopadhyay, Dhrubes Biswas, Saptarsi Ghosh
Publikováno v:
Journal of Crystal Growth. 418:138-144
A novel growth strategy for GaAs epilayer on Si(1 0 0) has been developed with AlAs/GaAs strained layer superlattice to achieve high crystalline quality for device applications. Emphasis has been given on understanding the inconclusive crystalline mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1827f0765b1bb96ff9de538ba899ee10
https://doi.org/10.1016/j.jcrysgro.2015.02.030
https://doi.org/10.1016/j.jcrysgro.2015.02.030
Autor:
Amir M. Dabiran, Nripendra N. Halder, Palash Das, Sanjib Kabi, Rahul Kumar, Dhrubes Biswas, Peter Chow, Boris Borisov, Sanjay Kr. Jana
Publikováno v:
Electronic Materials Letters. 10:1087-1092
This paper presents an approach of compositional grading of the barrier in AlGaN/GaN quantum well heterostructure to achieve high two dimensional electron gas (2DEG) carrier concentration and mobility for RF power amplifier applications. Plasma assis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7504bc84acce92ba7e7e8b8603c8251c
https://doi.org/10.1007/s13391-014-4067-9
https://doi.org/10.1007/s13391-014-4067-9