Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Sanjeev Basra"'
Publikováno v:
IEEE Transactions on Electron Devices. 65:4826-4833
In this paper, the effect of silicon-on-insulator (SOI) thickness scaling in fully and partially depleted SOI (FD-SOI and PD-SOI) devices is analyzed for their transient response to heavy-ion irradiation. We have analyzed radiation performance of FD-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75e14d87a51a7646b80311cbf5facf24
https://doi.org/10.1109/ted.2018.2869490
https://doi.org/10.1109/ted.2018.2869490
Publikováno v:
Microelectronics Journal. 115:105182
The very large scale integrated (VLSI) circuits become susceptible to soft errors mainly due to exposure to harsh environmental conditions. In this paper, the analysis of total ionizing dose (TID) effects on single gate NMOS, enclosed gate NMOS (ELT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fcf78320e758593e4445d1c5199dac7
https://doi.org/10.1016/j.mejo.2021.105182
https://doi.org/10.1016/j.mejo.2021.105182
Autor:
H. S. Jatana, Abhisek Dixit, Manoj Kumar, Chandan K. Jha, Kritika Aditya, Ramendra Singh, Sanjeev Basra, Pritam Yogi
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
In this paper, we investigate and report the total ionizing dose (TID) response of 0.18μm bulk n-channel MOSFETs subjected to a total cumulative dose of lKRad and lMRad by gamma radiations. The n-channel devices are characterized for their pre- and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92a43a78badca2a4be595342a49081a9
https://doi.org/10.1109/edtm.2019.8731170
https://doi.org/10.1109/edtm.2019.8731170