Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Sanjay Mahawar"'
Autor:
Mahesh Kumar Goenka, Usha Goenka, Md.Yasin Mujoo, Indrajit Kumar Tiwary, Sanjay Mahawar, Vijay Kumar Rai
Publikováno v:
Clinical Endoscopy, Vol 51, Iss 3, Pp 279-284 (2018)
Background/Aims Direct endoscopic pancreatic necrosectomy is increasingly being utilized to treat infected or symptomatic walled-off necrosis (WON) located close to the stomach or duodenum. Laterally-placed WON has traditionally been treated surgical
Externí odkaz:
https://doaj.org/article/3c5602ce1c5e4614817196f9e1711541
Publikováno v:
IEEE Transactions on Electron Devices. 63:2771-2776
Conventional spin transfer torque (STT) magneto-resistive random access memory (MRAM) generally includes a bulk n-channel MOS (NMOS) transistor as an access device that provides equal drive current in standalone conditions in both the directions. How
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b6ff1481ebbe64da196e5e1712c0f81
https://doi.org/10.1109/ted.2016.2570602
https://doi.org/10.1109/ted.2016.2570602
Autor:
Mijanur Rahaman Shaikh, Sanjay Mahawar, Tushar Saha, Sambhu Nath Bandyopadhyay, Dipankar Mukherjee, Anjan Das, Saikat Majumdar
Publikováno v:
IOSR Journal of Dental and Medical Sciences. 12:01-07
Background- Supraclavicular brachial plexus block is a popular and widely employed regional nerve block technique. Aims- To evaluate the effect of dexamethasone added to bupivacaine in supraclavicular brachial plexus block. Materials and Methods- 60
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd66dc4e61864cb35e3fc9974e36230c
https://doi.org/10.9790/0853-1210107
https://doi.org/10.9790/0853-1210107
Publikováno v:
2015 12th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON).
STT MRAMs are non-volatile memories potentially demonstrating high speed and integration density. These exclusive features of STT MRAMs are rapidly gaining attention of memory designers. They are strong contenders for futuristic embedded memory appli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4c30083a707f0f47aebb502ef7d8970
https://doi.org/10.1109/ecticon.2015.7207004
https://doi.org/10.1109/ecticon.2015.7207004
Publikováno v:
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
The spin transfer torque (STT) magneto-resistive random access memory (MRAM) often uses bulk and silicon on insulator (SOI) metal oxide semiconductor (NMOS) as access device. However, the drive current reduction due to the substrate bias effect in bu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::351a328bc497b0cca320534440982eab
https://doi.org/10.1109/edssc.2015.7285214
https://doi.org/10.1109/edssc.2015.7285214
Publikováno v:
Gastrointestinal Endoscopy. 85:AB420
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f326a6ddccb538f3b12c9cbabe59cbbb
https://doi.org/10.1016/j.gie.2017.03.975
https://doi.org/10.1016/j.gie.2017.03.975
Publikováno v:
In Gastrointestinal Endoscopy May 2017 85(5) Supplement:AB420-AB420