Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Sanjay Kumar Tomar"'
Autor:
Ahtisham Pampori, Sheikh Aamir Ahsan, Sanjay Kumar Tomar, Yogesh Singh Chauhan, Meena Mishra, Raghvendra Dangi, Umakant Goyal
Publikováno v:
IEEE Transactions on Electron Devices. 68:3302-3307
In this article, we present a surface-potential-based approach to model the bias-dependent effective velocity observed in AlGaN/GaN high-electron-mobility transistors (HEMTs) due to optical phonon scattering. Our model precisely reproduces the progre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::378c08c61b5633a5d65177c3d233fc51
https://doi.org/10.1109/ted.2021.3078717
https://doi.org/10.1109/ted.2021.3078717
Publikováno v:
Risk Analysis XI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce6e9097c96efbe9b3d21a13dc86f94b
https://doi.org/10.2495/risk180241
https://doi.org/10.2495/risk180241
Publikováno v:
Physics of Semiconductor Devices ISBN: 9783319030012
This paper discusses the design and measurement of highly efficient GaN HEMT based power amplifier at L Band. Large signal parameters including PAE and power output are presented at an operating frequency of 1 GHz. High efficiency >82 % is achieved b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c89b631664b8fbf275c979d63994c98d
https://doi.org/10.1007/978-3-319-03002-9_31
https://doi.org/10.1007/978-3-319-03002-9_31
Publikováno v:
16th International Workshop on Physics of Semiconductor Devices.
Amplification is one of the most basic and prevalent RF/Microwave circuit functions. This paper describes the design of an MIC(microwave integrated circuit) LNA(low noise amplifier) using PHEMT(Pseudomorphic High Electron Mobility Transistor) ATF-360
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67a66f75ef52ae9fe23047b04e9e1125
https://doi.org/10.1117/12.926869
https://doi.org/10.1117/12.926869