Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Sangyeon Jo"'
Autor:
YunMi Lee, Sangyeon Jo
Publikováno v:
Journal of Curriculum Integration. 17:133-164
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6e14a4f46699192847f2c5b2ac214fa
https://doi.org/10.35304/jci.17.1.06
https://doi.org/10.35304/jci.17.1.06
Autor:
Sangyeon Jo, Chaehyeong Park
Publikováno v:
Journal of Curriculum Integration. 16:1-31
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52b1ae0ce414ecb333362092fe36377b
https://doi.org/10.35304/jci.16.1.01
https://doi.org/10.35304/jci.16.1.01
Publikováno v:
Journal of Curriculum Integration. 15:1-25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33c5b67eb1b7072a1f5d4f467abb0d5c
https://doi.org/10.35304/jci.15.3.01
https://doi.org/10.35304/jci.15.3.01
Autor:
Chaehyeong Park, Sangyeon Jo
Publikováno v:
Journal of Curriculum Integration. 14:59-79
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::619fe9a5f70cd89af9eea0196893161e
https://doi.org/10.35304/jci.14.3.03
https://doi.org/10.35304/jci.14.3.03
Autor:
Sangyeon Jo
Publikováno v:
Journal of Curriculum Integration. 13:1-27
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d25b4341b349a150cf1552c6614a59c4
https://doi.org/10.35304/jci.13.4.01
https://doi.org/10.35304/jci.13.4.01
Publikováno v:
The Journal of Curriculum Studies. 33:79-100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb34caa5d8e39c3a3c9634285b8a4f53
https://doi.org/10.15708/kscs.33.3.201509.004
https://doi.org/10.15708/kscs.33.3.201509.004
Autor:
null Tae-Kyung Kim, null Jaihyuk Song, null Changsub Lee, null Dongyean Oh, null Taeseok Jang, null Jongkwang Lim, null Dongjun Lee, null Seung Lee, null Minhwan Lim, null Hyunyoung Shim, null Bongtae Park, null Man-Ki Lee, null Hunkook Lee, null Sangyeon Jo, null Woonkyung Lee, null Jeonghyuk Choi, null Kinam Kim
Publikováno v:
2006 21st IEEE Non-Volatile Semiconductor Memory Workshop.
One of the most important performances of NAND flash memory is reliability characteristics, such as program/erase cycling and data retention. Tunnel oxide quality is essential to the reliability and it is well known that tunnel oxide degradation duri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09a1ed2fc95f870f720f6dabef08aa27
https://doi.org/10.1109/.2006.1629484
https://doi.org/10.1109/.2006.1629484