Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Sangwoon Moon"'
Autor:
Han-Na Hwang, Sukmin Chung, Sangwoon Moon, Cheolho Jeon, Hajin Song, Chan-Cuk Hwang, Hyun-Joon Shin, Chong-Yun Park
Publikováno v:
Advanced Materials. 19:1321-1324
As predicted by Moore’s Law, [1] the feature size of semiconductor devices reached the 90 nm node in 2004. [2] Presently, research is focused on reaching 32 nm. [3] Unfortunately, standard UV lithography cannot be used at this scale. [3] Thus, seve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80f8e451200f9021a960ffa90b842ace
https://doi.org/10.1002/adma.200602166
https://doi.org/10.1002/adma.200602166
Autor:
Sangwoon Moon, Hyeong-Do Kim, Chong-Yun Park, Jin-Hee Han, Tai-Hee Kang, Han-Na Hwang, Ki-Jeong Kim, Kyuwook Ihm, Cheolho Jeon, Chan Cuk Hwang, Bongsoo Kim
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. :397-400
The adsorption of 4-NO 2 (C 6 H 4 )COOH (4-nitro benzoic acid) on the in situ prepared OH/Si(1 0 0) 2 × 1 surface was investigated using X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS). XPS and NEXAFS re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb15a131b8ca5907c265d47a2da502ef
https://doi.org/10.1016/j.elspec.2005.01.108
https://doi.org/10.1016/j.elspec.2005.01.108
Autor:
Sangwoon Moon, Ki-Jeong Kim, Sukmin Chung, Chongdo Park, Boklae Cho, Bongsoo Kim, Tai-Hee Kang
Publikováno v:
Surface Review and Letters. :285-291
We investigated the various oxidation conditions of stainless-steel surface using synchrotron radiation photoemission spectroscopy. Stainless-steel samples are oxidized at 450–550°C in various oxygen partial pressures. Increasing the annealing tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4674505c36fcf6391b4ed18d4cad6b7c
https://doi.org/10.1142/s0218625x02002208
https://doi.org/10.1142/s0218625x02002208
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:998-1003
Characterization of diffusion properties of atoms in oxides is crucial for understanding oxidation mechanism of metals because the oxidation is mediated by diffusion. Employing in situ photoemission spectroscopy, we have observed diffusion-induced co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76875ec073a5881f101a147bb4582708
https://doi.org/10.1116/1.1368837
https://doi.org/10.1116/1.1368837
Autor:
Jin-Hee Han, Chan-Bog Jeon, Ki-Jeong Kim, Han-Na Hwang, Chan-Cuk Hwang, Bongsoo Kim, Sangwoon Moon, Tai-Hee Kang, Kyuwook Ihm
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. :429-431
The chemical and geometrical characteristics of pyrrole on Si(1 0 0)-2 × 1 were studied by using the photoemission spectroscopy (PES) and the near edge X-ray absorption fine structure (NEXAFS). A pyrrole layer was formed by exposing 20 L pyrrole mol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d89823a6fabead3c6890a56833e40aa2
https://doi.org/10.1016/j.elspec.2005.01.029
https://doi.org/10.1016/j.elspec.2005.01.029
Autor:
Sangwoon Moon, Hajin Song, Chan-Cuk Hwang, Cheolho Jeon, Chong-Yun Park, Han-Na Hwang, Hyun-Joon Shin, Sukmin Chung
Publikováno v:
Applied Physics Letters. 91:193104
The adsorption of NH3 molecules on the Si(100)2×1 surface constructs a cleaner and more well-defined amine layer than self-assembled monolayer such as aminosilylated layer, which make it possible to study photoinduced reactions between amines and mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cada9576afeecae8bd299becdf9ce5f
https://doi.org/10.1063/1.2803216
https://doi.org/10.1063/1.2803216
Autor:
Cheolho Jeon, Hajin Song, Hyun-Joon Shin, Sukmin Chung, Sangwoon Moon, Chan-Cuk Hwang, Chong-Yun Park, Han-Na Hwang
Publikováno v:
Journal of the Korean Physical Society. 50:1745
Synchrotron radiation photoemission spectroscopy (SRPES) and scanning photoelectron microscopy (SPEM) have been used to investigate photon-stimulated H desorption from several H-terminated Si(001) surfaces for resistless lithography. H was desorbed f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ab458121ee0feea7356e9672a504501
https://doi.org/10.3938/jkps.50.1745
https://doi.org/10.3938/jkps.50.1745