Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Sangwon Ryu"'
Publikováno v:
Materials, Vol 14, Iss 11, p 3005 (2021)
In the semiconductor etch process, as the critical dimension (CD) decreases and the difficulty of the process control increases, in-situ and real-time etch profile monitoring becomes important. It leads to the development of virtual metrology (VM) te
Externí odkaz:
https://doaj.org/article/a895928c6d814e04b26c81e9a6ea2683
Publikováno v:
Current Applied Physics. 45:105-113
Autor:
Seolhye Park, Jaegu Seong, Yunchang Jang, Hyun-Joon Roh, Ji-Won Kwon, Jinyoung Lee, Sangwon Ryu, Jaemin Song, Ki-Baek Roh, Yeongil Noh, Yoona Park, Yongsuk Jang, Taeyoung Cho, Jae-Ho Yang, Gon-Ho Kim
Publikováno v:
Journal of the Korean Physical Society. 80:647-669
Publikováno v:
Journal of the Korean Physical Society. 80:233-240
Publikováno v:
Computers & Chemical Engineering. 123:126-142
The semiconductor etching process, which is the most important part of the semiconductor manufacturing process, requires higher sophistication as 10 nm semiconductors are mass produced. Etching methods utilizing plasma are getting increasingly popula
Autor:
Jaemin Song, Jongsik Kim, Dae Chul Kim, Mi-Young Song, Jung-Sik Yoon, Sung-Hyun Son, Ji-Won Kwon, Sangwon Ryu, Gon-Ho Kim
Publikováno v:
2020 IEEE International Conference on Plasma Science (ICOPS).
Publikováno v:
Computers & Chemical Engineering. 159:107696
Autor:
Gon-Ho Kim, Younggil Jin, Nam-Kyun Kim, Sangwon Ryu, Hyun-Joon Roh, Seolhye Park, Yunchang Jang
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 31:232-241
A phenomenological-based virtual metrology (VM) technique is developed for predicting the silicon nitride film thickness in multi-layer plasma-enhanced chemical vapor deposition (PECVD). Particularly, the analysis of optical emission spectroscopy bas
Publikováno v:
Materials, Vol 14, Iss 3005, p 3005 (2021)
Materials
Volume 14
Issue 11
Materials
Volume 14
Issue 11
In the semiconductor etch process, as the critical dimension (CD) decreases and the difficulty of the process control increases, in-situ and real-time etch profile monitoring becomes important. It leads to the development of virtual metrology (VM) te
Autor:
Daegeun Ha, Damdae Park, Chonghun Han, Junmo Koo, Kye Hyun Baek, Hyun-Joon Roh, Gon-Ho Kim, Sangwon Ryu
Publikováno v:
Computers & Chemical Engineering. 100:38-47
With the advent of more than Moore’s law era, control of plasma etch process is expected to become inevitable. Given that highly complex plasma is a medium of etch processes, plasma parameters are key factors to be controlled. In addition, highly i