Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Sangmun Oh"'
Publikováno v:
IEEE Transactions on Magnetics. 44:2824-2827
We report on the enhancement of the exchange field, Hex , in IrMn/CoFe systems as a result of the application of field annealing procedures. The exchange field is enhanced up to a 37% on application of a 2 Tesla field for 90 minutes at 225degC. This
Autor:
MASAO KAMIKO, HIROAKI CHIHAYA, WATARU SUGIMOTO, RYOICHI YAMAMOTO, SANGMUN OH, JUNHUA XU, ISAO KOJIMA
Publikováno v:
Surface Review and Letters. 13(02):201-207
We have investigated the effect of Bi on the heteroepitaxial growth of Co on Cu by reflection high-energy electron diffraction (RHEED) measurements. It was found that Bi enhanced the layer-by-layer growth of Co on the Cu(111) surfaces at 100°C. The
Autor:
L. Miloslavsky, Qunwen Leng, I. Lim, Mahendra Pakala, Christian Kaiser, Sangmun Oh, Chando Park
Publikováno v:
IEEE Transactions on Magnetics. 45:3457-3459
Influence of boron concentration in CoFeB on the transport properties of CoFeB (B 20% and B 16%)/MgO/CoFeB magnetic tunnel junction (MTJ) was investigated. Boron distribution was studied by using X-ray photoelectron spectroscopy (XPS). High-resolutio
Autor:
Takayoshi Ohtsu, Kouji Kataoka, Sangmun Oh, Kenji Furusawa, Sasaki Shinobu, T. Seki, H. Umezaki, Hideaki Tanaka, Kouichi Nishioka
Publikováno v:
IEEE Transactions on Magnetics. 41:2950-2952
In order to study the magnetic behaviors of pinned layers under different conditions, we applied compressive mechanical stress to a device and measured the transfer curve changes using a high-field (10 kOe) quasi-static tester. This permitted us to d
Autor:
Kenji Furusawa, T. Seki, Sangmun Oh, Hideaki Tanaka, Sasaki Shinobu, H. Umezaki, Kouichi Nishioka
Publikováno v:
INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005..
A synthetic-pinned GMR sensor is prepared by sputtering method and is lapped until its resistance reaches approximately R = 40/spl Omega/. The behaviour of the pinned layer is investigated by measuring the transfer curve change using a high-field qua
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