Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Sangmu Choi"'
Autor:
Kyung-youl Min, Dae Won Moon, Hyo Sik Chang, Sangmu Choi, Hyunsang Hwang, Hyung-Ik Lee, Hyundoek Yang
Publikováno v:
Applied Physics Letters. 80:386-388
The electrical and structural characteristics of an ultrathin gate dielectric, thermally grown on 4° tilted wafer has been investigated. Compared with a control wafer, a relaxation of the Si lattice strain at the SiO2/Si(001) interface was observed
Autor:
Taesung Jang, Hyunjun Sim, Kiju Im, Hyundoek Yang, Hye-Lan Lee, Sanghun Jeon, Sangmu Choi, Hyunsang Hwang
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
In this paper, we report on an investigation of the electrical characteristics of various amorphous lanthanide oxides prepared by e-beam evaporation. Excellent electrical characteristics were found for the amorphous lanthanide oxide including a high