Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Sangjian Zhang"'
Autor:
Huayan Xia, Sangjian Zhang, Hao Li, Tianli Li, Fang Liu, Wenchao Zhang, Wang Guo, Tian Miao, Wenjie Hu, Jian Shen, Yongli Gao, Junliang Yang, Mei Fang
Publikováno v:
Results in Physics, Vol 22, Iss , Pp 103963- (2021)
Vertical organic spin valve (OSV)-based organic spintronic devices with additional degree of freedom to utilize and control the magnetoresistance (MR) by spin of electrons, have attracted a lot of interests for both foundation science and future func
Externí odkaz:
https://doaj.org/article/c366a458abff471b938443823fc97566
Publikováno v:
Royal Society Open Science, Vol 7, Iss 4 (2020)
Inkjet printing has become a promising, efficient, inexpensive, scalable technique for materials deposition, mask-less and digital patterning in many device applications. Meanwhile, the ink preparation remains a challenge especially for printing func
Externí odkaz:
https://doaj.org/article/3db6575fafab4cc689ba0d32b4328c1d
Autor:
Hongyun Jiang, Ze-Ru Liu, Qian Lei, Zhilei Zhao, Sangjian Zhang, Jiang Yanbin, Wenting Qiu, Zhou Li, Zhu Xiao
Publikováno v:
Materials Science and Engineering: A. 759:396-403
A novel Cu-1.01%Ni-0.28%Si-0.14%Co-0.45%Cr (mass percent) alloy with high strength and high conductivity was fabricated. Microstructure, mechanical and electrical properties of the alloy after multi-stage thermo-mechanical treatment were investigated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3dbb80bac8582da73b20486d070a6b9
https://doi.org/10.1016/j.msea.2019.05.003
https://doi.org/10.1016/j.msea.2019.05.003
Autor:
Eric Vetter, Lu Jiang, Ho Nyung Lee, Wenchao Zhang, Xiaoshan Xu, Jian Shen, Mei Fang, Sangjian Zhang, Dali Sun
Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two ferromagnets b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::686b02dcf340bb1f4c9707a0577977b6
http://arxiv.org/abs/1910.02002
http://arxiv.org/abs/1910.02002
Autor:
Tianli Li, Wenchao Zhang, Fang Liu, Huayan Xia, Hao Li, Wang Guo, Yongli Gao, Tian Miao, Sangjian Zhang, Mei Fang, Jian Shen, Junliang Yang, Wenjie Hu
Publikováno v:
Results in Physics, Vol 22, Iss, Pp 103963-(2021)
Vertical organic spin valve (OSV)-based organic spintronic devices with additional degree of freedom to utilize and control the magnetoresistance (MR) by spin of electrons, have attracted a lot of interests for both foundation science and future func
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6241f271bbf250297c1e3f5577cf0952
https://doi.org/10.1016/j.rinp.2021.103963
https://doi.org/10.1016/j.rinp.2021.103963