Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Sanghyun Ban"'
Autor:
Donguk Kim, Jun Tae Jang, Changwook Kim, Hyun Wook Kim, Eunryeong Hong, Sanghyun Ban, Minchul Shin, Hanwool Lee, Hyung Dong Lee, Hyun-Sun Mo, Jiyong Woo, Dae Hwan Kim
Publikováno v:
IEEE Transactions on Electron Devices. 70:514-520
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d9ef7cbd618ed164dcec3fbc5be4ec9
https://doi.org/10.1109/ted.2022.3231818
https://doi.org/10.1109/ted.2022.3231818
Autor:
Donguk Kim, Jun Tae Jang, Changwook Kim, Hyun Wook Kim, Eunryeong Hong, Sanghyun Ban, Minchul Shin, Hanwool Lee, Hyung Dong Lee, Hyun-Sun Mo, Jiyong Woo, Dae Hwan Kim
Publikováno v:
IEEE Transactions on Electron Devices. 70:521-526
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bd233cae905e1c74e573b22a683601f
https://doi.org/10.1109/ted.2022.3231807
https://doi.org/10.1109/ted.2022.3231807
Publikováno v:
IEEE Electron Device Letters. 43:643-646
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36b3679d99d64cef9b3dcb14004cf9d9
https://doi.org/10.1109/led.2022.3152207
https://doi.org/10.1109/led.2022.3152207
Autor:
Jangseop Lee, Seonghun Kim, Sangmin Lee, Sanghyun Ban, Seongjae Heo, Donghwa Lee, Oleksandr Mosendz, Hyunsang Hwang
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbb03b61edbe0c80374f86a2c91f9bf5
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830179
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830179
Autor:
Sangheon Lee, Sangpyo Kim, Donggyu Yim, Hye-Keun Oh, Junhwan Lee, Sanghyun Ban, Ohyun Kim, Byung-Ho Nam
Publikováno v:
Journal of Nanoscience and Nanotechnology. 13:8032-8035
EUV mask absorber sidewall angle should be measured for mask Optical Proximity Correction and shadow effect estimation. Hence, verifying the three-dimensional profile of mask topography has become a challenge in EUV mask inspection. This paper evalua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0cd3169476156344493accd584e86fcb
https://doi.org/10.1166/jnn.2013.8170
https://doi.org/10.1166/jnn.2013.8170
Autor:
Sanghyun Ban, Ohyun Kim
Publikováno v:
Japanese Journal of Applied Physics. 53:06JE15
In this study, the effects of the Ti layer on resistive switching behaviors of HfOx-based resistive switching random access memory (ReRAM) were investigated. After introducing a thin Ti layer (~10 nm) between the Ta and HfOx layers, both cycle-to-cyc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::812c8567c6410be182a8e121f87b7542
https://doi.org/10.7567/jjap.53.06je15
https://doi.org/10.7567/jjap.53.06je15
Autor:
Ban, Sanghyun, Kim, Taehoon, Choi, Hyejung, Lee, Wootae, Hong, Seokman, Zang, Hwanjun, Lee, Beomseok, Kim, Myoungsub, Lee, Seungyun, Lee, Hyungdong
Publikováno v:
IEEE Electron Device Letters; Mar2020, Vol. 41 Issue 3, p373-376, 4p