Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Sanghoon Myung"'
Autor:
Changwook Jeong, Sanghoon Myung, Byungseon Choi, Jinwoo Kim, Wonik Jang, In Huh, Jae Myung Choe, Young-Gu Kim, Dae Sin Kim
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68d60ca3f150f5af7a3bc1fb74ff4bb3
https://doi.org/10.1109/edtm55494.2023.10103098
https://doi.org/10.1109/edtm55494.2023.10103098
Autor:
In Huh, Mun-Bo Shim, Kyuhun Lee, Byungseon Choi, Jae Myung Choe, Wonik Jang, Hyunjae Jang, Changwook Jeong, Dae Sin Kim, Sanghoon Myung, Jisu Ryu, Moon-Hyun Cha, Jinwoo Kim, Daeyoung Park, Ho-Joon Lee
Publikováno v:
IEEE Transactions on Electron Devices. 68:5364-5371
There is a growing consensus that the physics-based model needs to be coupled with machine learning (ML) model relying on data or vice versa in order to fully exploit their combined strengths to address scientific or engineering problems that cannot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34df8baa6086f7df68bfb634a37e8323
https://doi.org/10.1109/ted.2021.3093844
https://doi.org/10.1109/ted.2021.3093844
Autor:
Sanghoon Myung, Byungseon Choi, Wonik Jang, Jinwoo Kim, In Huh, Jae Myung Choe, Young-Gu Kim, Dae Sin Kim
Publikováno v:
Japanese Journal of Applied Physics. 62:SC0808
Technology computer-aided design (TCAD) simulation has incessantly solved many complex problems, but it becomes demanding that alternatives be found because TCAD simulation cannot provide precise and fast prediction in the nano-scale era. With the su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2841c3ca353b9492fd4bce27317a494
https://doi.org/10.35848/1347-4065/acbaa6
https://doi.org/10.35848/1347-4065/acbaa6
Traditional TCAD simulation has succeeded in predicting and optimizing the device performance; however, it still faces a massive challenge - a high computational cost. There have been many attempts to replace TCAD with deep learning, but it has not y
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60743a1b36d51d64472e1830c12f14c8
http://arxiv.org/abs/2204.09578
http://arxiv.org/abs/2204.09578
Autor:
Jinwoo Kim, Ji-Seong Doh, Dae Sin Kim, Kang-Hyun Baek, Wonik Jang, Changwook Jeong, In Huh, Yoon-Suk Kim, Jisu Ryu, Jae-ho Kim, Yongwoo Jeon, Sanghoon Myung, Jaemin Kim, Songyi Han
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
This paper presents a novel approach to enable real-time device simulation and optimization. State-of-the-art algorithms which can describe semiconductor domain are adopted to train deep learning models whose input and output are process condition an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6cd4cec4c8941e7b5b8780aab7a78b8
https://doi.org/10.23919/sispad49475.2020.9241622
https://doi.org/10.23919/sispad49475.2020.9241622