Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Sanghamitra Neogi"'
Autor:
Artem K. Pimachev, Sanghamitra Neogi
Publikováno v:
npj Computational Materials, Vol 7, Iss 1, Pp 1-12 (2021)
Abstract First-principles techniques for electronic transport property prediction have seen rapid progress in recent years. However, it remains a challenge to predict properties of heterostructures incorporating fabrication-dependent variability. Mac
Externí odkaz:
https://doaj.org/article/d9be47d814294a37a10ea655404a7cf6
Autor:
Artem Pimachev, Sanghamitra Neogi
First-principles modeling techniques have shown remarkable success in predicting electronic band structures of materials. However, the computational costs make it challenging to use them for predicting band structures of semiconductor heterostructure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6808921b6f747445d667e94b7bc09c1d
https://doi.org/10.21203/rs.3.rs-2536716/v1
https://doi.org/10.21203/rs.3.rs-2536716/v1
Publikováno v:
Journal of Materials Chemistry C. 10:7525-7542
Lattice strain environment of superlattices causes shift of electronic bands and electron relaxation times modulated electronic transport properties.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38e3541b5a290e9d4ef9d7abc797215e
https://doi.org/10.1039/d1tc05878a
https://doi.org/10.1039/d1tc05878a
Autor:
Sanghamitra Neogi, Manoj Settipalli
Publikováno v:
Journal of Electronic Materials. 49:4431-4442
We analyze the cross-plane miniband transport in n-doped [001] silicon (Si)/germanium (Ge) superlattices using an effective mass approximation (EMA) approach that correctly accounts for the indirect nature of the Si and Ge band gaps. Direct-gap based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33844308820245581c2ada444f36eb7a
https://doi.org/10.1007/s11664-020-08136-4
https://doi.org/10.1007/s11664-020-08136-4
Publikováno v:
ACS
Conventional materials are reaching their limits in computation, sensing, and data storage capabilities, ushered in by the end of Moore's law, myriad sensing applications, and the continuing exponential rise in worldwide data storage demand. Conventi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca95adbb200d3f6a4fbc839a648584b4
https://hdl.handle.net/1721.1/133504
https://hdl.handle.net/1721.1/133504
Autor:
Artem Pimachev, Sanghamitra Neogi
Publikováno v:
npj Computational Materials, Vol 7, Iss 1, Pp 1-12 (2021)
First-principles techniques for electronic transport property prediction have seen rapid progress in recent years. However, it remains a challenge to model heterostructures incorporating variability due to fabrication processes. Machine-learning (ML)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe59b1894ba74dfb947b2135c984358c
http://arxiv.org/abs/2011.08426
http://arxiv.org/abs/2011.08426
Autor:
Sanghamitra Neogi, Davide Donadio
Publikováno v:
Physical Review Applied, vol 14, iss 2
Author(s): Neogi, S; Donadio, D | Abstract: Anisotropic phonon transport is observed along different lattice directions in two-dimensional (2D) and layered materials. However, this effect vanishes in homogeneous, covalently bonded films, as the thick
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33b0d10281947f5178e52200a7a777a0
https://doi.org/10.1103/physrevapplied.14.024004
https://doi.org/10.1103/physrevapplied.14.024004
Role of substrate strain to tune energy bands–Seebeck relationship in semiconductor heterostructures
Publikováno v:
Journal of Applied Physics. 129:025301
In doped semiconductors and metals, the Seebeck coefficient or thermopower decreases monotonically with increasing carrier concentration in agreement with the Pisarenko relation. Here, we establish a fundamental mechanism to modulate and increase the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7a98647bbdc1b902a9a713843f756d7
https://doi.org/10.1063/5.0031523
https://doi.org/10.1063/5.0031523
Interstitial defects are inevitably present in doped semiconductors that enable modern-day electronic, optoelectronic or thermoelectric technologies. Understanding of stability of interstitials and their bonding mechanisms in the silicon lattice was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5bca7fe3ea14c69b69ee27731f66e313
http://arxiv.org/abs/1806.00217
http://arxiv.org/abs/1806.00217
Publikováno v:
Xiong, S; Selli, D; Neogi, S; & Donadio, D. (2017). Native surface oxide turns alloyed silicon membranes into nanophononic metamaterials with ultralow thermal conductivity. Physical Review B, 95(18). doi: 10.1103/PhysRevB.95.180301. UC Davis: Retrieved from: http://www.escholarship.org/uc/item/59j0p365
Physical Review B, vol 95, iss 18
Physical Review B, vol 95, iss 18
A detailed understanding of the relation between microscopic structure and phonon propagation at the nan oscale is essential to design materials with desired phononic and thermal properties.Here we uncover a new mechanism of phonon interaction in sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a244e6bfecca77f683fb039a7c32d33
http://www.escholarship.org/uc/item/59j0p365
http://www.escholarship.org/uc/item/59j0p365