Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Sanggun Choi"'
Publikováno v:
Materials Research Express, Vol 8, Iss 8, p 085902 (2021)
To extract comprehensive and accurate interface state density ( D _it ) distribution for a low-temperature polysilicon (LTPS) thin film, three well-established methods based on capacitance–voltage ( C – V ) measurements were compared: high–low
Externí odkaz:
https://doaj.org/article/83bd104425d441d8b0dac09399d86108
Autor:
Keunwoo Kim, Bummo Sung, Doona Kim, Sangsub Kim, Hanbit Kim, Jiyeong Shin, Hyena Kwak, Dokyeong Lee, Chanyoub Seol, Sanggun Choi, Jun Hyung Lim, Taewook Kang, Changhee Lee
Publikováno v:
Journal of the Society for Information Display. 31:298-307
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2448b04b039481436a3fa9032656488b
https://doi.org/10.1002/jsid.1222
https://doi.org/10.1002/jsid.1222
Autor:
Keunwoo Kim, Jaehwan Chu, Dokyeong Lee, Doona Kim, Hanbit Kim, Bummo Sung, Jiyoung Shin, Yunjung Oh, Hyena Kwak, Sanggun Choi, Junhyung Lim, Taewook Kang, Changhee Lee
Publikováno v:
SID Symposium Digest of Technical Papers. 53:147-150
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65fa3eb36caa608dfa67aba6248dfd18
https://doi.org/10.1002/sdtp.15439
https://doi.org/10.1002/sdtp.15439
Publikováno v:
SID Symposium Digest of Technical Papers. 50:206-209
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed145b29968e6896fe1515534865d08e
https://doi.org/10.1002/sdtp.12891
https://doi.org/10.1002/sdtp.12891
Autor:
Hwarim Im, Jeong Hyun Ahn, Won-Young Kim, Tae Eun Ha, Eun Kyung Jo, Yunjung Oh, Myoung Geun Cha, Sanggun Choi, Jun Hyung Lim, Yong-Sang Kim
Publikováno v:
Semiconductor Science and Technology. 37:105002
We investigated the improvement methods of the electrical characteristics and reliability of flexible low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) by optimizing the annealing process. We investigated the effect of annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22ae970d60a1113c250d6da79a03578c
https://doi.org/10.1088/1361-6641/ac8826
https://doi.org/10.1088/1361-6641/ac8826
Autor:
Jin-Oh Kwag, Young Joo Cho, Tae-Wook Kang, Jin Jang, Sungchul Kim, Sanggun Choi, Jae-Seob Lee, Byungju Han, Hye Yong Chu, Suhui Lee
Publikováno v:
Advanced Engineering Materials. 24:2100910
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::044ad14edaa76df64399a26d86292352
https://doi.org/10.1002/adem.202100910
https://doi.org/10.1002/adem.202100910
Publikováno v:
Materials Research Express. 8:085902
To extract comprehensive and accurate interface state density (D it) distribution for a low-temperature polysilicon (LTPS) thin film, three well-established methods based on capacitance–voltage (C–V) measurements were compared: high–low frequen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99ecb79ac63661b61ca94473922cccf4
https://doi.org/10.1088/2053-1591/ac1aa6
https://doi.org/10.1088/2053-1591/ac1aa6