Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Sangeeta Mangesh"'
Publikováno v:
Emitter: International Journal of Engineering Technology, Vol 11, Iss 2 (2023)
An exponential increase in number of attacks in IoT Networks makes it essential to formulate attack-level mitigation strategies. This paper proposes design of a scalable Kernel-level Forensic layer that assists in improving real-time evidence analysi
Externí odkaz:
https://doaj.org/article/0c39607a538446f18c1c36eb2a129c1a
Publikováno v:
2023 International Conference on Artificial Intelligence and Smart Communication (AISC).
Autor:
SANGEETA MANGESH KARYAKARTE
Publikováno v:
Studies in Computational Intelligence ISBN: 9783031088148
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cd89a6d74b4a1ebc20c672d90d9ba59
https://doi.org/10.1007/978-3-031-08815-5
https://doi.org/10.1007/978-3-031-08815-5
Publikováno v:
Sustainable Smart Cities ISBN: 9783031088148
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10a14ceb760a341a7e7a9b4117fb7a9a
https://doi.org/10.1007/978-3-031-08815-5_6
https://doi.org/10.1007/978-3-031-08815-5_6
Publikováno v:
Industry 4.0, AI, and Data Science ISBN: 9781003097181
Machine learning has been the most recommended approach for predicting the early detection of breast cancer. With the availability of datasets that have details about the features extracted from the mammograms as well as other imaging techniques, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7587f60bb7a065305a2efcc9982bea3c
https://doi.org/10.1201/9781003097181-7
https://doi.org/10.1201/9781003097181-7
Publikováno v:
Russian Microelectronics. 47:443-448
Referring to the experimental data available, a modified pile gate bulk FinFET device with trapezoidal cross-section is analyzed through this paper. Two special features of Pile gate FinFET are trapezoidal cross-section and extended gate. The compreh
Publikováno v:
International Journal of Advanced Computer Science and Applications. 10
An improved trapezoidal pile gate bulk FinFET device is implemented with an extension in the gate for enhancing the performance. The novelty in the design is trapezoidal cross-section FinFET with stacked metal gate along with extension on both sides.
Publikováno v:
Advances in Intelligent Systems and Computing ISBN: 9789811319655
With concern of global warming, low power design is an important research domain for scientist and engineers. Focusing upon the energy saving trend, this paper compares the performance analysis of all possible fin shapes in a 16 nm Bulk FinFET device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d8b5f1596141e1c88715cda38b22c28
https://doi.org/10.1007/978-981-13-1966-2_46
https://doi.org/10.1007/978-981-13-1966-2_46
Publikováno v:
2017 Devices for Integrated Circuit (DevIC).
With CMOS technology reaching its scale minima, possibilities of implementing different MOS device variants is being successfully explored by the VLSI design engineers. One of such successful alternative technique is the SOI device design. It is wide
Autor:
Sangeeta Mangesh, Prateek Asthana
Publikováno v:
International Journal of VLSI Design & Communication Systems. 5:47-64