Zobrazeno 1 - 10
of 25
pro vyhledávání: '"SangHyuk Yoo"'
Publikováno v:
Applied Sciences, Vol 14, Iss 16, p 7314 (2024)
For several years, a growing interest among numerous researchers and investors in predicting stock price movements has spurred extensive exploration into employing advanced deep learning models. These models aim to develop systems capable of comprehe
Externí odkaz:
https://doaj.org/article/f2be798c576d4344b5152acf32044864
Autor:
Sun Jun Kim, Jae Young Park, SangHyuk Yoo, Palanivel Umadevi, Hyunpyo Lee, Jinsoo Cho, Keonwook Kang, Seong Chan Jun
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-8 (2018)
Abstract Over the past few years, two-dimensional materials have gained immense attention for next-generation electric sensing devices because of their unique properties. Here, we report the carrier transport properties of MoS2 Schottky diodes under
Externí odkaz:
https://doaj.org/article/b31f2dfa1dfb4a19b250f4407562e4b6
Autor:
Taehee Kim, Sanjib Baran Roy, Sunil Moon, SangHyuk Yoo, Haryeong Choi, Vinayak G. Parale, Younghun Kim, Jihun Lee, Seong Chan Jun, Keonwook Kang, Seung-Hyun Chun, Kazuyoshi Kanamori, Hyung-Ho Park
Publikováno v:
ACS Nano. 16:1625-1638
Dispersing the minuscule mass loading without hampering the high catalytic activity and long-term stability of a noble metal catalyst results in its ultimate efficacy for the electrochemical hydrogen evolution reaction (HER). Despite being the most e
Machine-learned force fields have generated significant interest in recent years as a tool for molecular dynamics (MD) simulations, with the aim of developing accurate and efficient models that can replace classical interatomic potentials. However, b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f3dcd84d311aa20bf2bee0261801b21
http://arxiv.org/abs/2301.03729
http://arxiv.org/abs/2301.03729
Autor:
Seong Chan Jun, Jae Young Park, Jong Min Kim, Taekyeong Kim, Byeongho Park, Sanghyuk Yoo, Keonwook Kang, Soo Hyun Lee, Young Tea Chun
Publikováno v:
Nano Research. 14:2207-2214
We demonstrate the dipole-assisted carrier transport properties of bis(trifluoromethane)sulfonamide (TFSI)-treated O-ReS2 field-effect transistors. Pristine ReS2 was compared with defect-mediated ReS2 to confirm whether the presence of defects on the
Autor:
Sanjib Baran Roy, Sunil Moon, Kwang Hee kim, Amar Patil, Malik Abdul Rehman, SangHyuk Yoo, Youngho Seo, Jong Hyeok Park, Keonwook Kang, Seong Chan Jun
Publikováno v:
Applied Catalysis B: Environmental. 319:121906
Autor:
Hosun Ryou, Yeonji Choi, Hee Soo Lee, Seunghwan Jeong, Sangyong Jeon, Sanghyuk Yoo, Kyongjoo Oh, Tae Hyun Park
Publikováno v:
Sustainability
Volume 13
Issue 21
Sustainability, Vol 13, Iss 11822, p 11822 (2021)
Volume 13
Issue 21
Sustainability, Vol 13, Iss 11822, p 11822 (2021)
Since the creation of stock markets, there have been attempts to predict their movements, and new prediction methodologies have been devised. According to a recent study, when the Russell 2000 industry index starts to rise, stocks belonging to the co
Autor:
Haryeong Choi, Taehee Kim, Taeho Kim, Sunil Moon, SangHyuk Yoo, Vinayak G. Parale, Rushikesh P. Dhavale, Keonwook Kang, Hyunchul Sohn, Hyung-Ho Park
Publikováno v:
Applied Materials Today. 28:101536
Publikováno v:
RSC Advances. 9:18326-18332
The dielectric layer, which is an essential building block in electronic device circuitry, is subject to intrinsic or induced defects that limit its performance. Nano-layers of hexagonal boron nitride (h-BN) represent a promising dielectric layer in
Publikováno v:
Journal of Mechanical Science and Technology. 32:3273-3281
We study shock behavior of single crystalline nickel (Ni) using molecular dynamics (MD) simulations. Five different embedded-atom method (EAM) potential models were tested to select a suitable potential for shock simulation by comparing Gruneisen par