Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Sang-won Shim"'
Autor:
Lee-Sang Jung, Sang-Won Shim
Publikováno v:
International Journal of IT Business Strategy Management. 6:1-8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efd31b21cd84cec827ef9771c95874cd
https://doi.org/10.21742/ijibsm.2020.6.1.01
https://doi.org/10.21742/ijibsm.2020.6.1.01
Dissertation/ Thesis
Autor:
Sang-Won Shim (6620390)
This thesis research is concerned with the exploration, design, and validation of novel haptic technologies and signals that feel natural and meaningful in a calm and pleasant way. Our ultimate goal is to expand the possibilities of human-machine int
Autor:
Jeon Hongsoo, In-Mo Kim, Jae-Ick Son, Chae-Hoon Kim, Seung-jae Lee, Byung-Hoon Jeong, Kyoung-Tae Kang, Lee Ho-Jun, Kwon Taehong, Pansuk Kwak, Jae-Yun Lee, Jai-Hyuk Song, D. Chris Kang, Jeong-yun Yun, Jin-Yub Lee, Cheon An Lee, Yo-Han Lee, Sang-Won Shim, Ho-joon Kim, Sung-Hoon Kim, Sanggi Hong, Sang-Won Park, Choi Yonghyuk, Myeong-Woo Lee, Jonghoon Park, Jongchul Park, Bong-Kil Jung, Han-sol Kim, Ki-Sung Kim, Jun-young Ko, Eung-Suk Lee, Sang-Wan Nam, Hogil Lee, Won-Tae Kim, Kyung-Min Kang, Chi-Weon Yoon, Ji-Ho Cho, Junha Lee, Yoon-Sung Shin, Dae Seok Byeon, Jung-ho Song, Seung-Hyun Moon, Jaedoeg Lyu, Jongyeol Park
Publikováno v:
ISSCC
The exponential data size growth in high-speed networks is a key motivator for nonvolatile memory development. To support this demand, higher density NAND is required: with a smaller cell size and higher interface speed. Generally, scaling down NAND
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::178a828c41d7c4c85ab42cc4831d97a2
https://doi.org/10.1109/isscc42613.2021.9366054
https://doi.org/10.1109/isscc42613.2021.9366054
Autor:
Hong Z. Tan, Sang-Won Shim
Publikováno v:
Design, User Experience, and Usability. Interaction Design ISBN: 9783030497125
HCI (20)
HCI (20)
The goal of the present study was to design vibrotactile signals that support a more engaging and delightful user experience. Using a four-tactor display called palmScape, custom-designed signals were created to capture the essence of natural phenome
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19931d410822717317011abb68397b52
https://doi.org/10.1007/978-3-030-49713-2_37
https://doi.org/10.1007/978-3-030-49713-2_37
Autor:
Jeong-Hyuk Choi, Jinho Ryu, Sang-Won Park, Myung-Hoon Choi, Hyang-ja Yang, Dae-Han Kim, Kye-Hyun Kyung, Donghun Kwak, Kitae Park, Dae-Seok Byeon, Jeong-Don Ihm, Jae-Hoon Jang, Moosung Kim, Kyung-Tae Kang, Doo-Sub Lee, Dongkyo Shim, Ji-Ho Cho, Wook-Ghee Hahn, You-Se Kim, Sang-Won Shim, Jae-Woo Im, Sang-Won Hwang, In-Mo Kim, Hyun-Jun Yoon, Doohyun Kim, Woopyo Jeong, Sang-Wan Nam, Seok-Min Yoon, HyunWook Park
Publikováno v:
IEEE Journal of Solid-State Circuits. 51:204-212
Most memory-chip manufacturers keep trying to supply cost-effective storage devices with high-performance characteristics such as shorter tPROG, lower power consumption and higher endurance. For many years, every effort has been made to shrink die si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::630a5c2ba3286158aacb257b39988422
https://doi.org/10.1109/jssc.2015.2474117
https://doi.org/10.1109/jssc.2015.2474117
Autor:
Joonsoo Kwon, Hyun-Jun Yoon, Sung-Jun Kim, Dong-Kyu Youn, Jeung-Hwan Park, Kyungwa Yun, Doo-Sub Lee, Dongkyo Shim, HyunWook Park, Sang-Won Shim, Yang-Lo Ahn, Sang-Won Park, Doohyun Kim, Lee Kang-Bin, Hyung-Gon Kim, Kihwan Choi, Seung Hoon Shin, Jeong-Hyuk Choi, Taehyun Kim, Hyang-ja Yang, Ko Kuihan, Dae-Han Kim, Jinho Ryu, Woon-kyung Lee, Dae-Seok Byeon, Yoon-He Choi, Jinseon Yeon, Myong-Seok Kim, Han-soo Kim, Dong-Hyun Kim, Min-Su Kim, Donghun Kwak, Jinman Han, Won-Tae Kim, Kyung-Min Kang, Jae-Hoon Jang, Sang-Wan Nam, Kye-Hyun Kyung, Kitae Park, Moosung Kim, Pansuk Kwak, Myung-Hoon Choi, Du-Heon Song, Sungwhan Seo, Sung-Soo Lee
Publikováno v:
ISSCC
In the past few years, various 3D NAND Flash memories have been demonstrated, from device feasibility to chip implementation, to overcome scaling challenges in conventional planar NAND Flash [1-3]. The difficulties include shrinking the NAND cell and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2fc27711254f4b063d374f8bf40b229
https://doi.org/10.1109/jssc.2014.2352293
https://doi.org/10.1109/jssc.2014.2352293
Autor:
Sang-Won Shim, Yeonbae Chung
Publikováno v:
ETRI Journal. 29:457-462
This work presents a low-voltage static random access memory (SRAM) technique based on a dual-boosted cell array. For each read/write cycle, the wordline and cell power node of selected SRAM cells are boosted into two different voltage levels. This t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::141ef3d3a2a496bfd4eb9185fd3cfdd9
https://doi.org/10.4218/etrij.07.0106.0298
https://doi.org/10.4218/etrij.07.0106.0298
Autor:
Sang-Hyun Joo, Jae-Hoon Jang, Jeong-Hyuk Choi, HyunWook Park, Ohsuk Kwon, Jinho Ryu, Doo-Sub Lee, Dongkyo Shim, Donghun Kwak, Kye-Hyun Kyung, Myung-Hoon Choi, Ji-Sang Lee, Jeong-Don Ihm, Sang-Won Park, Ji-Ho Cho, Kyung-Tae Kang, Jae-Woo Im, Sung-Ho Choi, Moosung Kim, Ki-Tae Park, Wook-Ghee Hahn, Seok-Min Yoon, You-Se Kim, Woopyo Jeong, Sang-Wan Nam, Dae-Seok Byeon, Sang-Won Hwang, Hyang-ja Yang, Dae-Han Kim, Hyun-Jun Yoon, In-Mo Kim, Sang-Won Shim, Young-Sun Min, Doohyun Kim
Publikováno v:
ISSCC
Most memory-chip manufacturers keep trying to supply cost-effective storage devices with high-performance characteristics such as smaller tPROG, lower power consumption and longer endurance. For many years, every effort has been made to shrink die si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83b7a4ed6a586fb68ca3f6bb1b8736bc
https://doi.org/10.1109/isscc.2015.7062960
https://doi.org/10.1109/isscc.2015.7062960
Autor:
Ki-Tae Park, Jin-man Han, Daehan Kim, Sangwan Nam, Kihwan Choi, Min-Su Kim, Pansuk Kwak, Doosub Lee, Yoon-He Choi, Kyung-Min Kang, Myung-Hoon Choi, Dong-Hun Kwak, Hyun-wook Park, Sang-won Shim, Hyun-Jun Yoon, Doohyun Kim, Sang-won Park, Kangbin Lee, Kuihan Ko, Dong-Kyo Shim, Yang-Lo Ahn, Jeunghwan Park, Jinho Ryu, Donghyun Kim, Kyungwa Yun, Joonsoo Kwon, Seunghoon Shin, Dongkyu Youn, Won-Tae Kim, Taehyun Kim, Sung-Jun Kim, Sungwhan Seo, Hyung-Gon Kim, Dae-Seok Byeon, Hyang-Ja Yang, Moosung Kim, Myong-Seok Kim, Jinseon Yeon, Jaehoon Jang, Han-Soo Kim, Woonkyung Lee, Duheon Song, Sungsoo Lee, Kye-Hyun Kyung, Jeong-Hyuk Choi
Publikováno v:
2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::750e09b1dd1374087aa3b83666c3e6c9
https://doi.org/10.1109/isscc.2014.6757458
https://doi.org/10.1109/isscc.2014.6757458
Autor:
Jae-Yong Jeong, Seung-Hwan Shin, Hyun-Jun Yoon, Young-Hyun Jun, Ohsuk Kwon, Yoon-Hee Choi, Sang-Won Shim, Yang-Lo Ahn, Kye-Hyun Kyung, Jinman Han, Sangyong Yoon, Kitae Park, Tae-Young Kim, Myung-Hoon Choi, Dongkyo Shim, HyunWook Park, Youngsun Song
Publikováno v:
VLSIC
We have developed a new 3-bit programming algorithm of high performance TLC(Triple-level-cell, 3-bit/cell) NAND flash memories for 20nm node and beyond. By using the proposed 3-bit algorithm based on reprogramming with SLC-to-TLC migration, performan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cb08ba94ab77f0f34d3251764964222
https://doi.org/10.1109/vlsic.2012.6243825
https://doi.org/10.1109/vlsic.2012.6243825