Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Sang-Yeol Kang"'
Publikováno v:
Thin Solid Films. 713:138368
Atomic layer deposition with O3 reactant is widely used to deposit thin and conformal films in a ZrO2 based metal-insulator-metal (MIM) capacitor. Post-deposition annealing (PDA) improves the MIM capacitor's performances by crystallizing tetragonal Z
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03c3d1d20eb4a86a0cbe65dc4be27379
https://doi.org/10.1016/j.tsf.2020.138368
https://doi.org/10.1016/j.tsf.2020.138368
Publikováno v:
Thin Solid Films. 527:141-146
Indium tin oxide (ITO) thin films doped with various metal atoms were investigated in terms of phase transition behavior and electro-optical properties for the purpose of upgrading ITO and indium zinc oxide (IZO) films, commonly used for pixel electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90aadacbca56c6c1e1b3706d1d545bc7
https://doi.org/10.1016/j.tsf.2012.11.035
https://doi.org/10.1016/j.tsf.2012.11.035
Autor:
Suk-Jin Chung, Younsoo Kim, Jae Hyoung Choi, Cha Young Yoo, Yong Koo Kyoung, Hyung Ik Lee, Jae Soon Lim, JaeGwan Chung, Min Young Park, Ho-Kyu Kang, Kihong Kim, Sang Yeol Kang, Sung Heo
Publikováno v:
Journal of Nanoscience and Nanotechnology. 11:8309-8312
To minimize the formation of unwanted interfacial layers, thin interfacial layer (ZrCN layer) was deposited between TiN bottom electrode and ZrO2 dielectric in TiN/ZrO2/TiN capacitor. Carbon and nitrogen were also involved in the layer because ZrCN l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2faf7ee0b43dc1a6fc864ba898c1f2f9
https://doi.org/10.1166/jnn.2011.5043
https://doi.org/10.1166/jnn.2011.5043
Autor:
Min Young Park, Jae Soon Lim, Younsoo Kim, Jae Hyoung Choi, Kyu-Ho Cho, Hyung Ik Lee, Sang Yeol Kang, Suk-Jin Chung, Cha Young Yoo, Joo Tae Moon, Ki-Hong Kim, Hye Ran Choi, Jaekwan Chung
Publikováno v:
ECS Transactions. 33:299-305
Due to the downscaling of the devices like DRAM capacitor, introduction of new metal electrodes and high-k materials is indispensable for meeting the future device performance. A wide variety of DRAM capacitor electrodes are currently being evaluated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb96f1a03bc1ab15eb9fc3585fb02cfc
https://doi.org/10.1149/1.3481617
https://doi.org/10.1149/1.3481617
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:1381-1385
Ru is the most promising material for the capacitor electrode in the next generation dynamic random access memories. Ru thin films, however, which are deposited by chemical vapor deposition (CVD) have high tensile stresses. Therefore, many problems w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab223aaabeea49e4bb72a0b09248ece1
https://doi.org/10.1116/1.1560713
https://doi.org/10.1116/1.1560713
Autor:
Younsoo, Kim, Sang Yeol, Kang, Jae Hyoung, Choi, Jae Soon, Lim, Min Young, Park, Suk-Jin, Chung, Jaegwan, Chung, Hyung Ik, Lee, Ki Hong, Kim, Yong Koo, Kyoung, Sung, Heo, Cha Young, Yoo, Ho-Kyu, Kang
Publikováno v:
Journal of nanoscience and nanotechnology. 11(9)
To minimize the formation of unwanted interfacial layers, thin interfacial layer (ZrCN layer) was deposited between TiN bottom electrode and ZrO2 dielectric in TiN/ZrO2/TiN capacitor. Carbon and nitrogen were also involved in the layer because ZrCN l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::c44bdcfdd8b3ff4383d7c7b2a1734378
https://pubmed.ncbi.nlm.nih.gov/22097574
https://pubmed.ncbi.nlm.nih.gov/22097574
Autor:
Kyu-Ho Cho, Jae-soon Lim, Sang Yeol Kang, Suk-Jin Chung, Jong-Chul Choi, Mungi Park, Cha-young Yoo, Y. Kim
Publikováno v:
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45370250dce6b72cc21d037b71127107
https://doi.org/10.7567/ssdm.2010.p-4-9
https://doi.org/10.7567/ssdm.2010.p-4-9
Autor:
Wonjoon Kim, Sang Yeol Kang, Jong Myeong Lee, Ju Cheol Shin, Hyeong Joon Kim, Cheol Seong Hwang
Publikováno v:
Applied Physics Letters. 74:3489-3491
Electrical properties of (Bs,Sr)TiO3 (BST) thin films are characterized with sputtered and metal organic chemical vapor deposited (MOCVD) Pt top electrodes. BST films with MOCVD Pt top electrodes, which were deposited using Pt(CF3COCHCOCF3)2 (Pt-HFA)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a6ae113bcb9fc497dbb3d548b10a046
https://doi.org/10.1063/1.124139
https://doi.org/10.1063/1.124139
Autor:
Chin Moo Cho, Sang Yeol Kang, Jae Hyoung Choi, Jae-soon Lim, Su Hwan Kim, Younsoo Kim, Cha-Young Yoo, Ho-Kyu Kang
Publikováno v:
ECS Meeting Abstracts. :911-911
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cf3e87eafc15e2a6ee46bc5580a29e9
https://doi.org/10.1149/ma2013-01/22/911
https://doi.org/10.1149/ma2013-01/22/911
Autor:
Jae Hyoung Choi, Younsoo Kim, Jae Soon Lim, Min Young Park, Suk-Jin Chung, Sang Yeol Kang, Kyuho Cho, Cha Young Yoo, Joo Tae Moon
Publikováno v:
ECS Meeting Abstracts. :1513-1513
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cd16bb22f12d199b04069ed7448a637
https://doi.org/10.1149/ma2010-02/22/1513
https://doi.org/10.1149/ma2010-02/22/1513