Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Sang-Wan Nam"'
Publikováno v:
Journal of Digital Contents Society. 20:867-876
본 연구는 서울시 O2O 공공자전거 서비스 이용자들의 지속사용 의도에 관하여 알아보고자 실증적으로 분석을 하여서 결과를 도출하였다. 서울시 O2O 공공자전거 서비스 독립변수들로 온라인
Publikováno v:
Journal of Digital Contents Society. 20:547-557
Publikováno v:
Journal of Digital Contents Society. 20:513-526
Autor:
Jeon Hongsoo, In-Mo Kim, Jae-Ick Son, Chae-Hoon Kim, Seung-jae Lee, Byung-Hoon Jeong, Kyoung-Tae Kang, Lee Ho-Jun, Kwon Taehong, Pansuk Kwak, Jae-Yun Lee, Jai-Hyuk Song, D. Chris Kang, Jeong-yun Yun, Jin-Yub Lee, Cheon An Lee, Yo-Han Lee, Sang-Won Shim, Ho-joon Kim, Sung-Hoon Kim, Sanggi Hong, Sang-Won Park, Choi Yonghyuk, Myeong-Woo Lee, Jonghoon Park, Jongchul Park, Bong-Kil Jung, Han-sol Kim, Ki-Sung Kim, Jun-young Ko, Eung-Suk Lee, Sang-Wan Nam, Hogil Lee, Won-Tae Kim, Kyung-Min Kang, Chi-Weon Yoon, Ji-Ho Cho, Junha Lee, Yoon-Sung Shin, Dae Seok Byeon, Jung-ho Song, Seung-Hyun Moon, Jaedoeg Lyu, Jongyeol Park
Publikováno v:
ISSCC
The exponential data size growth in high-speed networks is a key motivator for nonvolatile memory development. To support this demand, higher density NAND is required: with a smaller cell size and higher interface speed. Generally, scaling down NAND
Autor:
Jeong-Hyuk Choi, Jinho Ryu, Sang-Won Park, Myung-Hoon Choi, Hyang-ja Yang, Dae-Han Kim, Kye-Hyun Kyung, Donghun Kwak, Kitae Park, Dae-Seok Byeon, Jeong-Don Ihm, Jae-Hoon Jang, Moosung Kim, Kyung-Tae Kang, Doo-Sub Lee, Dongkyo Shim, Ji-Ho Cho, Wook-Ghee Hahn, You-Se Kim, Sang-Won Shim, Jae-Woo Im, Sang-Won Hwang, In-Mo Kim, Hyun-Jun Yoon, Doohyun Kim, Woopyo Jeong, Sang-Wan Nam, Seok-Min Yoon, HyunWook Park
Publikováno v:
IEEE Journal of Solid-State Circuits. 51:204-212
Most memory-chip manufacturers keep trying to supply cost-effective storage devices with high-performance characteristics such as shorter tPROG, lower power consumption and higher endurance. For many years, every effort has been made to shrink die si
Autor:
Joonsoo Kwon, Hyun-Jun Yoon, Sung-Jun Kim, Dong-Kyu Youn, Jeung-Hwan Park, Kyungwa Yun, Doo-Sub Lee, Dongkyo Shim, HyunWook Park, Sang-Won Shim, Yang-Lo Ahn, Sang-Won Park, Doohyun Kim, Lee Kang-Bin, Hyung-Gon Kim, Kihwan Choi, Seung Hoon Shin, Jeong-Hyuk Choi, Taehyun Kim, Hyang-ja Yang, Ko Kuihan, Dae-Han Kim, Jinho Ryu, Woon-kyung Lee, Dae-Seok Byeon, Yoon-He Choi, Jinseon Yeon, Myong-Seok Kim, Han-soo Kim, Dong-Hyun Kim, Min-Su Kim, Donghun Kwak, Jinman Han, Won-Tae Kim, Kyung-Min Kang, Jae-Hoon Jang, Sang-Wan Nam, Kye-Hyun Kyung, Kitae Park, Moosung Kim, Pansuk Kwak, Myung-Hoon Choi, Du-Heon Song, Sungwhan Seo, Sung-Soo Lee
Publikováno v:
ISSCC
In the past few years, various 3D NAND Flash memories have been demonstrated, from device feasibility to chip implementation, to overcome scaling challenges in conventional planar NAND Flash [1-3]. The difficulties include shrinking the NAND cell and
Autor:
Sang-Hyun Joo, Jae-Hoon Jang, Jeong-Hyuk Choi, HyunWook Park, Ohsuk Kwon, Jinho Ryu, Doo-Sub Lee, Dongkyo Shim, Donghun Kwak, Kye-Hyun Kyung, Myung-Hoon Choi, Ji-Sang Lee, Jeong-Don Ihm, Sang-Won Park, Ji-Ho Cho, Kyung-Tae Kang, Jae-Woo Im, Sung-Ho Choi, Moosung Kim, Ki-Tae Park, Wook-Ghee Hahn, Seok-Min Yoon, You-Se Kim, Woopyo Jeong, Sang-Wan Nam, Dae-Seok Byeon, Sang-Won Hwang, Hyang-ja Yang, Dae-Han Kim, Hyun-Jun Yoon, In-Mo Kim, Sang-Won Shim, Young-Sun Min, Doohyun Kim
Publikováno v:
ISSCC
Most memory-chip manufacturers keep trying to supply cost-effective storage devices with high-performance characteristics such as smaller tPROG, lower power consumption and longer endurance. For many years, every effort has been made to shrink die si
Autor:
S.Y. Lee, Suk-Ho Joo, Kyung-Seop Kim, H. J. Joo, D. J. Jung, N. W. Jang, Yongjik Park, Kyu-han Lee, Soon-Rewl Lee, Ho-Jung Kim, Yoon-Jong Song, S.O. Park, Sang-Wan Nam
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
Ferroelectric random access memory (FRAM) has been considered as a future memory device due to its ideal properties such as non-volatility, high endurance, fast write/read time and low power consumption. Recently, a 4 Mb FRAM was developed using 1T1C