Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Sang-Mun Chon"'
Publikováno v:
Journal of Photopolymer Science and Technology. 17:233-236
We found unusual exhaust pressure dependency on photo-sensitivity of positive photo-definable polyimide (posi-PDPI) when soft baking PDPI. Higher exhaust pressure of soft baking makes higher photo-sensitivity. This tendency is reverse thing what we e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::737e53bfeed497033850256e0d5a9855
https://doi.org/10.2494/photopolymer.17.233
https://doi.org/10.2494/photopolymer.17.233
Autor:
Hiroaki Nemoto, Masahiro Noda, Yoshikazu Yamaguchi, Yong-Ho Kim, Yutaka Makita, Tomoki Nagai, Sang Mun Chon, Jae Hyun Kim
Publikováno v:
Journal of Photopolymer Science and Technology. 17:379-384
LER of an acetal-type photoresist (PR) and an annealing-type PR was measured by Atomic Force Microscopy. The annealing-type PR showed smaller LER than acetal- type did. From acid diffusion length measurement study, the annealing-type PR has been foun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b359c92099027a452512d3c96cbf676
https://doi.org/10.2494/photopolymer.17.379
https://doi.org/10.2494/photopolymer.17.379
Autor:
Yoshiomi Hiroi, Takashi Matsumoto, Rikimaru Sakamoto, Sangwoong Yoon, Young-Ho Kim, Sang-Mun Chon, Daisuke Maruyama, Seok Jin Han, Young-Hoon Kim, Yasushi Sakaida, Yasuyuki Nakajima, EunYoung Yoon, Takahiro Kishioka
Publikováno v:
SPIE Proceedings.
We found a new polymer platform for ArF BARC that can be prepared by addition polymerization. This system not only improves resist pattern collapse, but also allows control of the optimum film thickness, and etch rate by combination of compounds, met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19ff2498295652027cb303df1156d146
https://doi.org/10.1117/12.599421
https://doi.org/10.1117/12.599421
Autor:
Jeong Yun Ya, Sang-Mun Chon, Myungsun Kim, Kim Boo Deuk, Min-Ho Jung, Hong Lee, Young-Ho Kim, Don Winning, Do Young Kim, Young-Hoon Kim, Beom-Sang Yoo, Sangwoong Yoon, Eun-Soon Chung
Publikováno v:
SPIE Proceedings.
There are many considerations to the design of BARC materials. Among those many properties, one important property that can effect lithographic performance is BARC coating uniformity. In general, the basic coating property (conformal or planar) depen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78a007130fae671a33e556be4f395c9d
https://doi.org/10.1117/12.533924
https://doi.org/10.1117/12.533924
Autor:
Sang-Mun Chon, Kyung-Mee Kim, Jae-Hyun Kim, Chang-Ho Lee, Sang Sik Moon, Young-Ho Kim, Shi Yong Lee, Seok Bong Park, Sangwoong Yoon, Won Mi Kim
Publikováno v:
SPIE Proceedings.
LER of an acetal-type photoresist (PR) and an annealing-type PR was measured by Atomic Force Microscopy, with which LER is more quantitatively measurable than using SEM. The annealing-type PR showed smaller LER than acetal-type did. Acid diffusion le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faff381dd949f2167b3fbb2ef6000bdd
https://doi.org/10.1117/12.533880
https://doi.org/10.1117/12.533880
Autor:
Kyung-Mee Kim, Yasuhisa Sone, Takahiro Kishioka, Sang-Gyun Woo, Shi Yong Lee, Sang-Mun Chon, Myungsun Kim, Sangwoong Yoon, Jae-Hyun Kim, Hyun-woo Kim, Young-Ho Kim, Yasuyuki Nakajima
Publikováno v:
SPIE Proceedings.
The shrinkage of resist pattern during in-line SEM measurement has been argued and studied as one of the problems unsettled for manufacturing with ArF photolithography. Many of attempts to solve this problem have focused their attentions on the impro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70f52b8275d81c7fbc6af68457b6eaa5
https://doi.org/10.1117/12.533884
https://doi.org/10.1117/12.533884
Autor:
Shi Yong Lee, Kim Boo Deuk, Do Young Kim, Sangwoong Yoon, Hong Lee, Myungsun Kim, Kyung-Mee Kim, Young-Ho Kim, Young-Hoon Kim, Sang-Mun Chon, Jae-Hyun Kim
Publikováno v:
SPIE Proceedings.
The ArF resist has been evaluated focusing on resin character such as molecular weight, monomer composition and polydispersity (Pd). The resin properties were investigated to elucidate that which parameter was affected to the line edge roughness (LER
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ec35f928fe5a2444bf8c2af432da182
https://doi.org/10.1117/12.533950
https://doi.org/10.1117/12.533950
Autor:
Young-Ho Kim, Sang Mun Chon, Yong-Hoon Kim, Sangwoong Yoon, Hoe-sik Chung, Yasuyuki Nakajima, Ken-Ichi Mizusawa, Tomoyuki Enomoto, Keisuke Nakayama
Publikováno v:
Advances in Resist Technology and Processing XX.
A frequent problem encountered by photoresists during the manufacturing of semiconductor device is that activating radiation is reflected back into the photoresist by the substrate. So, it is necessary that the light reflection is reduced from the su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1063302bbf4bb01fabc7f3d57b4a6fde
https://doi.org/10.1117/12.485060
https://doi.org/10.1117/12.485060
Publikováno v:
2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203).
Due to shrinkage of design rule, optical in-line defect inspection with white-light source is reaching its detection limit. To overcome the limitation, a defect inspection system using UV confocal microscopy was recently introduced. In this paper, we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4195a2fe7b998f5a1052bedb8f5ade20
https://doi.org/10.1109/issm.2001.962990
https://doi.org/10.1109/issm.2001.962990
Autor:
Yong-Wan Kim, Kye-Weon Kim, Kyu-Hong Lim, Sang-Mun Chon, Sun-Yong Choi, Chung-sam Jun, Sang-Bong Choi
Publikováno v:
2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203).
We have developed an automated contact inspection system using an in-line CD SEM and applied it to monitor contact etching processes. As the design rule shrinks, monitoring of the contact etching, which cannot be detected by the conventional optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14c5f3c200a604329c1e35c2b130fea1
https://doi.org/10.1109/issm.2001.962999
https://doi.org/10.1109/issm.2001.962999