Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Sang-Kyu Oh"'
Autor:
Woojin Rim, Sunghyun Park, Sanghoon Baek, Young-Keun Lee, Jong-Hoon Jung, Jong Shik Yoon, Gyu-Hong Kim, Jae-Hong Park, Giyong Yang, Jinsuk Jung, Kyu-Myung Choi, Sang-Kyu Oh, Jae-Ho Park, Sang-pil Sim, Hyo-sig Won, Sung-Bong Kim, Jin-Tae Kim, Kang-Hyun Baek, Taejoong Song, Yongho Kim
Publikováno v:
IEEE Journal of Solid-State Circuits. 50:158-169
Two 128 Mb dual-power-supply SRAM chips are fabricated in a 14 nm FinFET technology. A 0.064 $\mu$ m $^{2}$ and a 0.080 $\mu$ m $^{2}$ 6T SRAM bitcells are designed for high-density (HD) and high-performance (HP) applications. To improve ${\rm V}_{{\
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aff5fc60370a6af25017b3dd3a8da8a7
https://doi.org/10.1109/jssc.2014.2362842
https://doi.org/10.1109/jssc.2014.2362842
Autor:
Kyu-Myung Choi, Jong-Hoon Jung, Woojin Rim, Sunghyun Park, Jinsuk Jung, Sung-Bong Kim, Gyu-Hong Kim, Jae-Ho Park, Sanghoon Baek, Young-Keun Lee, Jin-Tae Kim, Sang-pil Sim, Jong Shik Yoon, Kee Sup Kim, Giyong Yang, Taejoong Song, Sang-Kyu Oh, Kang-Hyun Baek
Publikováno v:
ISSCC
With the explosive growth of battery-operated portable devices, the demand for low power and small size has been increasing for system-on-a-chip (SoC). The FinFET is considered as one of the most promising technologies for future low-power mobile app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be3ab87bd05f724346b20effc2af20b9
https://doi.org/10.1109/isscc.2014.6757413
https://doi.org/10.1109/isscc.2014.6757413