Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Sang-Joon Hwang"'
Autor:
Soo-Young Choi, Young-Eun Kim, Dong-bin Ahn, Tae-Hoon Kim, Jae-Hyuk Choi, Hye-Ryung Lee, Sang-Joon Hwang, Un-Kyung Kim, Sang-Heun Lee
Publikováno v:
Clinical and Experimental Otorhinolaryngology, Vol 2, Iss 1, Pp 44-47 (2009)
ObjectivesHearing loss is the most common sensory disorder in humans and genetic causes are estimated to cause more than 50% of all incidents of congenital hearing loss. To develop an efficient method for a genetic diagnosis of hearing loss, we have
Externí odkaz:
https://doaj.org/article/a1605eb777e04087ac6b9def87593455
Autor:
Yesin Ryu, Sung-Gi Ahn, Jae Hoon Lee, Jaewon Park, Yong Ki Kim, Hyochang Kim, Yeong Geol Song, Han-Won Cho, Sunghye Cho, Seung Ho Song, Haesuk Lee, Useung Shin, Jonghyun Ahn, Je-Min Ryu, Sukhan Lee, Kyoung-Hwan Lim, Jungyu Lee, Jeong Hoan Park, Jae-Seung Jeong, Sunghwan Joo, Dajung Cho, So Young Kim, Minsu Lee, Hyunho Kim, Minhwan Kim, Jae-San Kim, Jinah Kim, Hyun Gil Kang, Myung-Kyu Lee, Sung-Rae Kim, Young-Cheon Kwon, Young Yong Byun, Kijun Lee, Sangkil Park, Jaeyoun Youn, Myeong-O Kim, Kyomin Sohn, Sang-Joon Hwang, Jooyoung Lee
Publikováno v:
IEEE Journal of Solid-State Circuits. 58:1051-1061
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c80db8e5f79af25b48cddf42ba40bee
https://doi.org/10.1109/jssc.2022.3232096
https://doi.org/10.1109/jssc.2022.3232096
Autor:
Daewoong Lee, Jaehyeok Baek, Hye-Jung Kwon, Dae-Hyun Kwon, Chulhee Cho, Sang-Hoon Kim, Donggun An, Chulsoon Chang, Unhak Lim, Jiyeon Im, Wonju Sung, Hye-Ran Kim, Sun-Young Park, Hyoung-Joo Kim, Hoseok Seol, Juhwan Kim, Jungbum Shin, Gil-Young Kang, Yong-Hun Kim, Sooyoung Kim, Wansoo Park, Seok-Jung Kim, Chan-Yong Lee, Seungseob Lee, Tae-Hoon Park, Chi-Sung Oh, Hyodong Ban, Hyungjong Ko, Hoyoung Song, Tae-Young Oh, Sang-Joon Hwang, Kyung-Suk Oh, Jung-Hwan Choi, Jooyoung Lee
Publikováno v:
IEEE Journal of Solid-State Circuits. 58:279-290
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbc580599e1edb34dc63017fb2dcf4b9
https://doi.org/10.1109/jssc.2022.3222203
https://doi.org/10.1109/jssc.2022.3222203
Autor:
Dae-Hyun Kim, Byungkyu Song, Hyun-a Ahn, Woongjoon Ko, Sunggeun Do, Seokjin Cho, Kihan Kim, Seung-Hoon Oh, Hye-Yoon Joo, Geuntae Park, Jin-Hun Jang, Yong-Hun Kim, Donghun Lee, Jaehoon Jung, Yongmin Kwon, Youngjae Kim, Jaewoo Jung, Seongil O, Seoulmin Lee, Jaeseong Lim, Junho Son, Jisu Min, Haebin Do, Jaejun Yoon, Isak Hwang, Jinsol Park, Hong Shim, Seryeong Yoon, Dongyeong Choi, Jihoon Lee, Soohan Woo, Eunki Hong, Junha Choi, Jae-Sung Kim, Sangkeun Han, Jongmin Bang, Bokgue Park, Janghoo Kim, Seouk-Kyu Choi, Gong-Heum Han, Yoo-Chang Sung, Won-Il Bae, Jeong-Don Lim, Seungjae Lee, Changsik Yoo, Sang Joon Hwang, Jooyoung Lee
Publikováno v:
2022 IEEE International Solid- State Circuits Conference (ISSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a10249d70b36afa2ce068eb468610e20
https://doi.org/10.1109/isscc42614.2022.9731537
https://doi.org/10.1109/isscc42614.2022.9731537
Autor:
Sang-joon Hwang, Jae-Jun Lee, Young-uk Chang, Hangi Jung, Kyoung-Sun Kim, Young-Soo Sohn, Jeonghyeon Cho, Young-Ho Lee, J.E. Jung, Tae-Young Oh, Sun-Won Kang, Joo Kun, Joo-young Lee, Do-hyung Kim, Woo-Jin Na, Hye-Seung Yu, Young-Tae Kim, Won-Young Kim, Ho-young Song, Gong Heum Han, Jonghoon Kim, Ik-joon Choi, Sung Joo Park
Publikováno v:
HCS
Spurred by the increasing market needs for big data and cloud services, global server suppliers and hyper- scalers are looking to adopt high-speed and large-capacity memory modules. To fulfill this trend, the brand- new low-voltage operable DDR5 (dou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b11020a906b84875c0db7f11e6307978
https://doi.org/10.1109/hcs52781.2021.9567190
https://doi.org/10.1109/hcs52781.2021.9567190
Autor:
Jeong-Don Ihm, Useung Shin, Kim Sang-Kyeom, Seung-hwan Hong, Hyunki Kim, Sang Joon Hwang, Han-Ki Jeong, Chang-Hyun Bae, Jaewoong Kim, Jang-Hoo Kim, Ki-Won Lee, Chang Ho-Jun, Yoo-Chang Sung, Hwan-Chul Jung, Jin-Hyeok Baek, Changsik Yoo, Jeongsik Hwang, Dong-Min Kim, Kyomin Sohn, Junsub Yoon, Sangwoo Kim, Cheongryong Cho, Myung-O Kim
Publikováno v:
VLSI Circuits
This paper presents a reflection and crosstalk canceling continuous-time linear equalizer (CTLE) for high-speed DDR SDRAM interface. To enhance the voltage margin in noisy multi-drop DDR SDRAM channel, the proposed CTLE cancels reflection noise by co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efbe50e1af5d84a291c78e062fef46a1
https://doi.org/10.23919/vlsicircuits52068.2021.9492390
https://doi.org/10.23919/vlsicircuits52068.2021.9492390
Publikováno v:
European Journal of Organic Chemistry. 2019:1940-1943
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c970014d73eea79cb31e3db085c457e5
https://doi.org/10.1002/ejoc.201900042
https://doi.org/10.1002/ejoc.201900042
Autor:
Seon-Kyoo Lee, Jungdon Ihm, Sunwon Jung, Jin-Yup Lee, Seung-jae Lee, Daehoon Na, Anil Kavala, Tongsung Kim, Tae-Sung Lee, Chi-Weon Yoon, Dae-Woon Kang, Lee Jangwoo, Junha Lee, Eunjin Song, Byung-Hoon Jeong, Byung-Kwan Chun, Dong-Su Jang, Chan-Ho Kim, Dae Seok Byeon, Doo-Il Jung, Hwasuk Cho, Dongku Kang, Jai Hyuk Song, Manjae Yang, Sang-joon Hwang, Youngmin Jo
Publikováno v:
VLSI Circuits
A 1.2 V, 1.8 Gb/s/pin 16Tb-NAND flash memory multi-chip package incorporating with 16-dies of 1-Tb NAND flash memory and the 3rd generation F-Chip is proposed. The proposed F-Chip is developed to meet the performance requirements of high capacity sto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a3bea399a151155c6b58d2a4c935a4f
https://doi.org/10.1109/vlsicircuits18222.2020.9163052
https://doi.org/10.1109/vlsicircuits18222.2020.9163052
Autor:
Park Se-Hwan, Myung-Hoon Choi, Seonyong Lee, Seung-jae Lee, Jisoo Cho, Garam Kim, Youngsun Song, Ki-chang Jang, Dongku Kang, Young-don Choi, Jisu Kim, Sang-Lok Kim, Hyun-Jun Yoon, Jung-Hwan Choi, Ii Han Park, Jong-Eun Park, Kyung-Hwa Kang, Jaeheon Jeong, Heejin Kim, Dong-Hyun Shin, Sung-Min Joe, Joonsoo Kwon, Jonghoo Jo, Lee Han-Jun, Hyung-Gon Kim, Doohyun Kim, Jungmin Park, Joon-Suc Jang, Dae-Seok Byeon, Kanabin Lee, Jungkwan Kim, Jinbae Bang, Jeong-Don Lim, Park Jiyoon, Seuna Hyun Moon, Sung-Won Yun, Ki-whan Song, Pansuk Kwak, Sohyun Park, Minseok Kim, Joo-Yona Park, Hwajun Jang, Jong Min Kim, Deokwoo Lee, Sang Joon Hwang
Publikováno v:
ISSCC
3D NAND flash memory has enhanced its areal density by more than 50% per year by virtue of the aggressive development of 3D WL stacking technology for the recent three consecutive years [1]–[3]. Also storage market still requires more bits for dive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9989443f2344302b522d4cc39c05051f
https://doi.org/10.1109/isscc19947.2020.9063053
https://doi.org/10.1109/isscc19947.2020.9063053
Publikováno v:
Bulletin of the Korean Chemical Society. 39:535-539
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a4d32b2cd741cfc26b400e625fbf777
https://doi.org/10.1002/bkcs.11426
https://doi.org/10.1002/bkcs.11426