Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Sang-Hyuk Ryu"'
Publikováno v:
Biomedical Engineering: Applications, Basis and Communications. 24:117-121
We investigated the characteristics of Al2O3 gate pH-ISFET which was fabricated by using the standard complementary metal oxide semiconductor (CMOS)-process techniques. The Al2O3 film used to sensing membrane was deposited by atomic layer deposition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c7817ba36aa3e71959a43051ab324ba
https://doi.org/10.4015/s1016237212500160
https://doi.org/10.4015/s1016237212500160
Publikováno v:
Molecular Crystals and Liquid Crystals. 550:66-75
This paper presents modeling and parameter extraction of the capacitance characteristics of the inverted-staggered a-Si:H TFT in both the depletion and inversion regions of operation. The need for a model of the capacitance with variable gate-source
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a4ffe3a4540a067a4a3e5b9ffcc0b2c
https://doi.org/10.1080/15421406.2011.600217
https://doi.org/10.1080/15421406.2011.600217
Publikováno v:
Journal of Sensor Science and Technology. 20:213-218
The load cell is a force sensor and a transducer that is used to convert a physical force into a electrical signal for weighing equipment. Most conventional load cells are widely used a metal foil strain gauge for sensing element when force being app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a396d4f2f89561485a49f008ab27865
https://doi.org/10.5369/jsst.2011.20.3.213
https://doi.org/10.5369/jsst.2011.20.3.213
Publikováno v:
International Journal of Modern Physics B. 24:3107-3111
This paper describes the influence of surface roughness on the mobility of a - SiN : H and a - Si : H . For the a - SiN : H deposited by PECVD, the roughness was 0.832 nm. The a - SiN : H layer composed of (PECVD 150 nm + RACVD 100 nm) had better cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eedeab2fc300ed04048461444c72a8e
https://doi.org/10.1142/s0217979210066161
https://doi.org/10.1142/s0217979210066161
Publikováno v:
ECS Meeting Abstracts. :15-15
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1d9d18c19cd205611fb5275b9d48d85
https://doi.org/10.1149/ma2011-02/2/15
https://doi.org/10.1149/ma2011-02/2/15
Publikováno v:
ECS Meeting Abstracts. :58-58
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f406b52f42ced86971b547f42bcf0375
https://doi.org/10.1149/ma2010-02/1/58
https://doi.org/10.1149/ma2010-02/1/58
Publikováno v:
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics; 6/30/2010 Part 2 of, Vol. 24 Issue 15/16, p3107-3111, 5p, 2 Diagrams, 2 Charts, 6 Graphs