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pro vyhledávání: '"Sang-Ho Park Park"'
Autor:
Dug-June Kim Kim, Soo-Jin Park Park, Hee-Kyung Sung, Sang-Ho Park Park, Jang-Uk Shin, Young-Tak Han, Jeha Kim Kim
Publikováno v:
ETRI Journal. 24:398-400
Using Cr2O3 thin film, we developed a novel etch-stop technique for the protection of silicon su rface morphology during deep ion coupled plasma etching of silica layers. With this technique we were able to etch a silica trench with a depth of over 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29033337d6359177f985a9d66833e7ab
https://doi.org/10.4218/etrij.02.0202.0501
https://doi.org/10.4218/etrij.02.0202.0501
