Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Sang-Hak Lim"'
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
Since the first Fan-out Wafer Level Packaging (FOWLP) was introduced in 2001 by Infineon, lots of technical advancements and studies related to this technology have been reported, but thermal studies have not been reported due to their thermal favora
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6961df74ad64b4f268a4b184ebdd5502
https://doi.org/10.1109/ectc32862.2020.00313
https://doi.org/10.1109/ectc32862.2020.00313
Autor:
So-Yeon Park, Seung-Wook Shin, Byeri Yoon, Young-Min Kim, Sang-Hak Lim, Sungho Choi, Yu-Mi Heo, Miyeon Han
Publikováno v:
Advances in Patterning Materials and Processes XXXVI.
As the semiconductor manufacturing industry develops into the cutting-edge technology, the thick and high etch resistant material is required. Amorphous carbon layer (ACL), currently widely-used deposition-type film, can meet the requirement for etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::486ab581e7a5f462bc4368c7e18a07b2
https://doi.org/10.1117/12.2515136
https://doi.org/10.1117/12.2515136
Publikováno v:
2018 China Semiconductor Technology International Conference (CSTIC).
For multilayer process, the importance of spin on carbon (SOC) material that replaces amorphous carbon layer (ACL) is ever increasing. SOC is an organic polymer with high carbon content formulated in organic solvents for spin-coating application that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5034f7f900245ded490651111bd6b80c
https://doi.org/10.1109/cstic.2018.8369206
https://doi.org/10.1109/cstic.2018.8369206
Autor:
Seung-Hyun Kim, Jaebum Lim, Sang-Hak Lim, Kim Sunghwan, Yu-Mi Heo, Jin-Hyung Kim, Park Yushin, Hyeonil Jung, Yun-Jun Kim, Yang Sunyoung, Seung-Wook Shin, Jeong Yun Yu
Publikováno v:
2018 China Semiconductor Technology International Conference (CSTIC).
Quad-layer and tri-layer systems have been widely used as stack integration schemes for fine patterning. Compared to tri-layer system, the quad-layer system includes an additional layer of silicon oxynitride (SiON), which requires higher curing tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ef8fed02f71fab68530a3aa9fe980ea
https://doi.org/10.1109/cstic.2018.8369207
https://doi.org/10.1109/cstic.2018.8369207
Publikováno v:
SPIE Proceedings.
A thick spin-on carbon hardmask (SOH) material is designed to overcome inherent problems of amorphous deposited carbon layer (ACL) and thick photoresist. For ACL in use of semiconductor production process, especially when film thickness from sub-micr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce7c6599daf0adfe5c186b5a0e86723e
https://doi.org/10.1117/12.2257867
https://doi.org/10.1117/12.2257867
Autor:
Hui-Chan Yun, Jin-Hyung Kim, Park Youjung, Seulgi Jeong, Byeri Yoon, Yoona Kim, Jae-Yeol Baek, Sang-Hak Lim
Publikováno v:
SPIE Proceedings.
For multilayer process, importance of carbon-based spin-on hardmask material that replaces amorphous carbon layer (ACL) is ever increasing. Carbon-based spin-on hardmask is an organic polymer with high carbon content formulated in organic solvents fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cb3bedab0f875bac01695e187aae843
https://doi.org/10.1117/12.2257880
https://doi.org/10.1117/12.2257880
Autor:
Seung-Hyun Kim, Sang-Hak Lim, Jeong Yun Yu, Yun-Jun Kim, Hyeonil Jung, Seung-Wook Shin, Kim Sunghwan, Miyeon Han, Chung-Heon Lee, Jaebum Lim, Park Yushin
Publikováno v:
SPIE Proceedings.
For fine patterning, there are two possible hard mask integration schemes: quad-layer and tri-layer systems. Due to the different structures and processes between quad- and tri- layer systems, each system needs specific chemical and physical properti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::258ba43227899d1204614a83829caa64
https://doi.org/10.1117/12.2257846
https://doi.org/10.1117/12.2257846
Autor:
Sung Soo Kim1 sungsoo@inha.ac.kr, Sang Hak Lim1
Publikováno v:
Journal of Physical Organic Chemistry. Oct2006, Vol. 19 Issue 10, p625-629. 5p. 3 Charts, 3 Graphs.
Autor:
Sang Hak Lim, Sung Soo Kim
Publikováno v:
Journal of Physical Organic Chemistry. 19:625-629
Various tert-butyl perbenzoates were prepared according to the known methods. The mixtures of tert-butyl perbenzoate and dimethyl sulfide underwent thermolysis at several temperatures (T °C: 80, 90, 100, and 110). The rates of consumption of the per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8d3a4751f26783f6977293e105e6b3c
https://doi.org/10.1002/poc.1099
https://doi.org/10.1002/poc.1099
Autor:
Goeun Kim, Sang-Kyun Kim, Sang Hak Lim, Hui Chan Yoon, Kwen Woo Han, Hyun-Ji Song, Miyoung Kim, Eun Su Park
Publikováno v:
SPIE Proceedings.
In the recent semiconductor industry, as the device shrinks, spin-on dielectric (SOD) has been adopted as a widely used material because of its excellent gap-fill, efficient throughput on mass production and highly competitive initial cost of ownersh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1dab7140900dd19146a8f2cfdf481b5
https://doi.org/10.1117/12.916252
https://doi.org/10.1117/12.916252