Zobrazeno 1 - 10
of 143
pro vyhledávání: '"Sang-Gyun Woo"'
Publikováno v:
Robot Intelligence Technology and Applications 6 ISBN: 9783030976712
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fecfad3497cd42162daad15d01eb913c
https://doi.org/10.1007/978-3-030-97672-9_5
https://doi.org/10.1007/978-3-030-97672-9_5
Publikováno v:
2020 20th International Conference on Control, Automation and Systems (ICCAS).
In this paper, we propose a geometry-based collision avoidance method for unmanned aerial vehicles(UAVs) in formation flight. The leader-follower method was used for formation flight, and the geometry-based Closest Point of Approach (CPA) method was
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2345-2350
By the development of the double exposure technique or the double patterning technique, the pattern placement error of a photomask is interesting because of its impact on the size and position of wafer pattern. Among various sources to induce the pat
Autor:
Soon-ho Kim, Sang-Gyun Woo, Han-Ku Cho, Yong-Hoon Kim, Jeung-woo Lee, Sung-Hyuck Kim, Hye-Keun Oh
Publikováno v:
Japanese Journal of Applied Physics. 46:6124-6127
ArF immersion lithography may be the best candidate for sub-60 nm device patterning. However, the polarization effect is the most prominent root cause for the degradation of the image quality in high numerical aperture (NA) immersion lithography as t
Publikováno v:
Nanotechnology. 16:2227-2232
Atomic force microscopes (AFM) have been used to measure the strength of adhesion of photoresist patterns which generally collapse during rinsing with water in the development process. We suggest how to measure the collapsing force of the photoresist
Autor:
Man-Hyoung Ryoo, Jin-Young Yoon, Hyun-Woo Kim, Sang-Gyun Woo, Jung-Hwan Ha, Mitsuhiro Hata, Han-Ku Cho
Publikováno v:
Journal of Photopolymer Science and Technology. 18:621-625
Immersion barrier coat was formulated and evaluated on ArF photoresists from view points of profiles and lithographic performances with both dry and wet conditions. Hydrophobic group, acid group, and polar group were introduced into base polymer to r
Publikováno v:
Journal of Photopolymer Science and Technology. 16:463-466
In this study, we investigated the effect of surfactant-added rinse and soft bake on pattern collapse in ArF lithography. It was possible to obtain 21% narrower pattern with the aid of surfactant solution. Surfactant with low dynamic surface tension
Publikováno v:
Journal of Photopolymer Science and Technology. 16:499-505
The advent of 193 nm ArF lithography opened new era of sub-90 nm patterning in DRAM industry. ArF lithography in single layer scheme, however, has limitation in the substrate fabrication of sub-90 nm L/S due to the decreased physical thickness of res
Autor:
Jung-Min Sohn, Woo-Sung Han, Sang-Gyun Woo, Tae Moon Jeong, Jong Rak Park, Hyun-Jae Kang, Sung-Woon Choi, Sung-Woo Lee, Won-Tai Ki
Publikováno v:
Japanese Journal of Applied Physics. 41:5113-5119
To achieve the high level in photolithographic technology that is needed for current microelectronic devices, it is strongly required to consider emerging key parameters that were not critical drawbacks in previous photolithographic techniques. Flare
Autor:
Sang-Jun Choi, Joo-Tae Moon, George G. Barclay, Yun-Sook Chae, Hyun-Woo Kim, Robert J. Kavanagh, Ji-Soo Kim, Sang-Gyun Woo, Sook Lee
Publikováno v:
Journal of Photopolymer Science and Technology. 15:529-534
It is expected that ArF lithography will be introduced for device manufacturing for sub-100nm nodes, as high NA ArF step and scan systems (NA=O.75) become available. We previously reported on a platform, based on a vinyl ether-maleic anhydride (VEMA)