Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Sang-Gyu Koh"'
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract A physical reservoir device with tunable transient dynamics is strongly required to process time-series data with various timescales generated in the edge region. In this study, we proposed using the dielectric relaxation at an electrode–i
Externí odkaz:
https://doaj.org/article/e49ac32322f54807b68396d3c7471ff6
Publikováno v:
The Journal of Physical Chemistry C. 126:6736-6744
Autor:
Takuma Matsuo, Dan Sato, Sang-Gyu Koh, Hisashi Shima, Yasuhisa Naitoh, Hiroyuki Akinaga, Toshiyuki Itoh, Toshiki Nokami, Masakazu Kobayashi, Kentaro Kinoshita
Publikováno v:
ACS applied materialsinterfaces. 14(32)
Herein, a physical reservoir device that uses faradaic currents generated by redox reactions of metal ions in ionic liquids was developed. Synthetic time-series data consisting of randomly arranged binary number sequences ("1" and "0") were applied a
Autor:
Takuma Matsuo, Dan Sato, Sang-Gyu Koh, Hisashi Shima, Yasuhisa Naitoh, Hiroyuki Akinaga, Toshiyuki Itoh, Toshiki Nokami, Masakazu Kobayashi, Kentaro Kinoshita
Publikováno v:
ECS Meeting Abstracts. :2117-2117
Physical Reservoir Computing (PRC) has recently attracted significant attention as a computational method suitable for the edge AI computing, which requires both the high performance of information processing and energy conservative operation. There
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Insight Into the Mechanism of Tail Bits in Data Retention of Vacancy-Modulated Conductive Oxide RRAM
Autor:
Kazuaki Kurihara, Mihaela Ioana Popovici, Gouri Sankar Kar, Attilio Belmonte, Sang-Gyu Koh, Ludovic Goux, G. L. Donadio
Publikováno v:
IEEE Electron Device Letters. 39:480-483
The underlying mechanism causing tail bits in data retention for high resistance state (HRS) of vacancy-modulated conductive oxide resistive RAM, consisting of TiN/amorphous-Si/TiO2/TiN structure, was investigated. The tail bits observed in the small
Publikováno v:
Japanese Journal of Applied Physics. 60:SBBK10
Metal-organic frameworks, which are three-dimensional nanoporous materials composed of metal ions and organic ligands, have recently attracted significant attention as functional materials owing to their structural flexibility in the material design
Publikováno v:
ECS Meeting Abstracts. :2710-2710
Metal-Organic Frameworks (MOFs), which is three-dimensional (3-D) nanoporous materials composed of metal ions and organic ligands coordinated together, has recently attracted enormous attention as functional materials for electronic devices owing to
Autor:
Takahiro Yamasaki, Kentaro Kinoshita, Takumi Morita, Takahisa Ohno, Jun Nara, Sang-Gyu Koh, Yoshinori Tanaka
Publikováno v:
ECS Meeting Abstracts. :2711-2711
Metal-Organic Framework (MOF) are three-dimensional nanoporous materials that are self-organized by coordination bonds between metal ions and organic ligands, and can provide functions such as magnetism and catalytic properties[1]. Talin et al. repor
Publikováno v:
Scientific Reports
Although the presence of an oxygen reservoir (OR) is assumed in many models that explain resistive switching of resistive random access memory (ReRAM) with electrode/metal oxide (MO)/electrode structures, the location of OR is not clear. We have prev