Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Sang-Gil Ryu"'
Publikováno v:
Microsystem Technologies. 27:2395-2406
Precise printed circuit boards (PCBs) and touch screen panels (TSPs) are produced by the proximity exposure patterning process. In the exposure patterning process, the smaller the gap between the mask and the substrate—under the condition that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7932577cb2dc7e9a9437009d2ea29688
https://doi.org/10.1007/s00542-020-05121-z
https://doi.org/10.1007/s00542-020-05121-z
Publikováno v:
Robotics and Computer-Integrated Manufacturing. 58:109-119
An optimum design methodology for a large area, flexure-based XYθ mask alignment stage, which can be applied to a 12-inch wafer photolithography process, was presented. The XYθ micropositioning stage consisted of a working plate with a 12-inch hole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a6f55f2671714ec0e56ba62bcde4e91
https://doi.org/10.1016/j.rcim.2019.02.005
https://doi.org/10.1016/j.rcim.2019.02.005
Publikováno v:
Optik. 208:164058
Proximity exposure with line beam scanning can be an alternative to traditional proximity exposure for a fast, high-resolution, large-area patterning. The optical elements used for shaping the line beams have a very large length-to-cross-sectional ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15212e7384ed2af8f590ccfad80d91a9
https://doi.org/10.1016/j.ijleo.2019.164058
https://doi.org/10.1016/j.ijleo.2019.164058
Publikováno v:
Applied Physics A. 121:255-260
We present a method to trigger highly selective and directed growth of individual silicon nanowires based on an electrically biased atomic force microscope (AFM) tip. The biased tip affects the nanowire growth behavior right from the initial stage. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c79910c14cd467aafb019fcce6d58fa
https://doi.org/10.1007/s00339-015-9427-2
https://doi.org/10.1007/s00339-015-9427-2
Autor:
Hua Guo, Chun Cheng, Ning Wang, Shuigang Xu, Junqiao Wu, Costas P. Grigoropoulos, Kai Liu, Wei Bao, Sang-Gil Ryu, Miquel Salmeron, Wen Fan, Deyi Fu, Otto C. Ho, Jian Zhou
Publikováno v:
Advanced Optical Materials. 3:336-341
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::069b023fa615f7bf7231bdf449ea5ce7
https://doi.org/10.1002/adom.201400483
https://doi.org/10.1002/adom.201400483
Publikováno v:
Applied Physics A. 116:51-58
Growth of discrete silicon nanowires is reported with nanoscale location selectivity by employing near-field laser illumination. An uncoated dielectric atomic force microscope (AFM) tip provides a nanometer-scale light source that is sufficiently loc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a222ced36901a3d684e5422d4a6ab70
https://doi.org/10.1007/s00339-014-8480-6
https://doi.org/10.1007/s00339-014-8480-6
Autor:
Sang-Gil Ryu, Kyunghoon Kim, Costas P. Grigoropoulos, Yoonkyung Lee, Junsuk Rho, David J. Hwang, Eunpa Kim
Publikováno v:
Applied Physics Express. 12:056501
Length-controlled indium nitride (InN) nanowires are grown by localized laser-assisted metal organic vapor phase epitaxy. Laser irradiation results in spatially confined, rapid heating that enables precise nucleation control and subsequent nanowire g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0b7b6926c3ccafb2e7b598227462a89
https://doi.org/10.7567/1882-0786/ab1713
https://doi.org/10.7567/1882-0786/ab1713
Autor:
Hwang, David1, Sang-Gil Ryu1, Misra, Nipun1, Hojeong Jeon1, Grigoropoulos, Costas P.1 cgrigoro@me.berkeley.edu
Publikováno v:
Applied Physics A: Materials Science & Processing. Aug2009, Vol. 96 Issue 2, p289-306. 18p. 2 Color Photographs, 14 Diagrams, 7 Graphs.
Autor:
Andrew M. Minor, Jung Bin In, Costas P. Grigoropoulos, Eunpa Kim, Oscar D. Dubon, Bin Xiang, Sang-Gil Ryu, David J. Hwang, Jae-Hyuck Yoo
Publikováno v:
Applied Physics A. 114:277-285
We observe laser-induced grain morphology change in silicon nanopillars under a transmission electron microscopy (TEM) environment. We couple the TEM with a near-field scanning optical microscopy pulsed laser processing system. This novel combination
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::370d068685aca2bc1ab21931c4f9044c
https://doi.org/10.1007/s00339-013-8109-1
https://doi.org/10.1007/s00339-013-8109-1
Autor:
Eunpa Kim, Bin Xiang, Jae-Hyuck Yoo, Andrew M. Minor, Oscar D. Dubon, Sang-Gil Ryu, Costas P. Grigoropoulos, David J. Hwang
Publikováno v:
ACS Nano. 7:2090-2098
Semiconductor nanowire (NW) synthesis methods by blanket furnace heating produce structures of uniform size and shape. This study overcomes this constraint by applying laser-localized synthesis on catalytic nanodots defined by electron beam lithograp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0c560163fcc68248397ded711be3904
https://doi.org/10.1021/nn400186c
https://doi.org/10.1021/nn400186c