Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Sang-Duk Park"'
Publikováno v:
Physical Therapy Korea, Vol 28, Iss 4, Pp 245-250 (2021)
Background: The International Classification of Functioning, Disability, and Health-Child and Youth version (ICF-CY) is designed to record the characteristics of developing children and examine the influence of a child’s environment on their heal
Externí odkaz:
https://doaj.org/article/14b378f5f2214f138b8af488b905a300
Publikováno v:
Physical Therapy Korea. 28:245-250
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36560f3ef22f50bfcd3f0bded6db1da0
https://doi.org/10.12674/ptk.2021.28.4.245
https://doi.org/10.12674/ptk.2021.28.4.245
Publikováno v:
Journal of the Korean Physical Society. 54:976-980
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a93674736449a55c3c9cc039669b1dad
https://doi.org/10.3938/jkps.54.976
https://doi.org/10.3938/jkps.54.976
Publikováno v:
Surface and Coatings Technology. 202:5701-5704
Characteristics of atomic layer etching of (100) GaAs and (111) GaAs have been investigated using Ne neutral beam and Cl2 gas. By using a Ne neutral beam dose and a Cl2 gas pressure higher than critical values of 3.03 × 1016 atoms/cm2·cycle and 0.4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aab9d7a2b7c3c2bcec8dd68d0617f8ec
https://doi.org/10.1016/j.surfcoat.2008.06.123
https://doi.org/10.1016/j.surfcoat.2008.06.123
Publikováno v:
Solid State Phenomena. :275-278
The energy and the flux of the ion gun with a three-grid system was compared with those of the ion gun with a two-grid system and the characteristics of the neutral beam sources composed of the ion guns with different grid systems and a reflector for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee389d6b2faf09e7d213094a8348f452
https://doi.org/10.4028/www.scientific.net/ssp.124-126.275
https://doi.org/10.4028/www.scientific.net/ssp.124-126.275
Publikováno v:
Surface and Coatings Technology. :420-425
In the fabrication of nano-scale silicon-based devices, any process-related damage such as electrical charging and surface modification remaining during the processing may cause serious problems due to the size limitation of the devices. Therefore, e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fb8b1b330f2d64400840faf815aa37b
https://doi.org/10.1016/j.surfcoat.2003.09.019
https://doi.org/10.1016/j.surfcoat.2003.09.019
Publikováno v:
Surface and Coatings Technology. 171:285-289
In this study, the influence of substrate temperature on Ag etching is investigated using inductively coupled plasmas. When Cl 2 -based chemistry is used to etch Ag, involatile etch products remaining on the Ag film can be observed after the etching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a87ec549499319aef53293be5d3c1c0f
https://doi.org/10.1016/s0257-8972(03)00287-1
https://doi.org/10.1016/s0257-8972(03)00287-1
Autor:
Byoung-Kwan Song, Young-Joon Lee, Sang-Gab Kim, Hee-hwan Choe, Moon-Pyo Hong, Geun Young Yeom, Sang-Duk Park
Publikováno v:
Japanese Journal of Applied Physics. 42:286-290
In this study, Ag thin films deposited on glass were etched using inductively coupled Cl2-based plasmas and the effects of various Cl2-based gas mixtures on the formation of reactive byproducts affecting Ag etching were investigated. When Cl2-based g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0c7616448f07f8d857990d3f36ac71c
https://doi.org/10.1143/jjap.42.286
https://doi.org/10.1143/jjap.42.286
Publikováno v:
Japanese Journal of Applied Physics. 41:L1412-L1415
In this study, energetic reactive radical beams were formed with SF6 using a low-angle forward reflected neutral beam technique and the etch properties of SiO2 and possible damage induced by the radical beam were investigated. The results showed that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd10ec7195af2e9094dd21f59771df8a
https://doi.org/10.1143/jjap.41.l1412
https://doi.org/10.1143/jjap.41.l1412
Publikováno v:
Japanese Journal of Applied Physics. 41:L999-L1001
Tin-doped indium oxide (ITO) thin films were deposited at room temperature by a dual-oxygen-ion-beam-assisted evaporator system and the effects of doped tin concentrations in the films on the electrical properties of the ITO films were investigated.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a908891b85b2924463441bd1b2ecbf1c
https://doi.org/10.1143/jjap.41.l999
https://doi.org/10.1143/jjap.41.l999