Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Sang-Deog Cho"'
Autor:
Beom Hoan O, Chang-Jin Kang, Chin-Wook Chung, Dae-Kyu Choi, Joung Ho Lee, Suk-Ho Joo, Se-Geun Park, Jong Woo Lee, Junghoon Joo, Sung Kyeong Kim, Seung Gol Lee, Park Soon, Wan Jae Park, Duck Jin Chung, Chung-Gon Yoo, Joohee Kim, Sang-Deog Cho, Hyoun Woo Kim, Woon Suk Hwang, Jeong-Yeol Jang, Keeho Kim, Young-Chang Joo, Sung Pil Chang
Publikováno v:
Microelectronic Engineering. 85:300-303
We have investigated the characteristics of Ar/O"2 plasmas in terms of the photoresist (PR) and low-k material etching using a ferrite-core inductively coupled plasma (ICP) etcher. We found that the O"2/(O"2+Ar) gas flow ratio significantly affected
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc662b8467894843fae89ff7529da910
https://doi.org/10.1016/j.mee.2007.06.016
https://doi.org/10.1016/j.mee.2007.06.016
Publikováno v:
2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203).
Unit process conditions including coating and baking were optimized to use polysilazane-based spin on glass(SZ-SOG) which has excellent gap filling and planarization ability in an inter layer dielectric (ILD) layer, and this material was successfully
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29e48aa172841aceb36752008b21285d
https://doi.org/10.1109/issm.2001.962976
https://doi.org/10.1109/issm.2001.962976
Publikováno v:
2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203); 2001, p317-320, 4p