Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Sang-Bum Hu"'
An External Shape Optimization Study to Maximize the Range of a Guided Missile in Atmospheric Flight
Autor:
Sang Eon Je, Sang Bum Hu, Chan-Woo Park, Tae Hwan Cho, So Yeong Je, Rho-Shin Myong, Ui Chang Hwang, Young Rok Yang
Publikováno v:
Journal of the Korean Society for Aeronautical Space Science. 37:519-526
This paper describes a research result of a external shape optimization study to maximize the range of the guided missile with canards and tailfins in atmospheric flight. For this purpose, the external shape optimization program which can enhance the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18ec418a6910b2d65e06f00c9f800223
https://doi.org/10.5139/jksas.2009.37.6.519
https://doi.org/10.5139/jksas.2009.37.6.519
Autor:
Jang-Gn Yun, Soon-Young Oh, Yong-Goo Kim, Yong-Jin Kim, Heui-Seung Lee, Han-Seob Cha, Ui-Sik Kim, Hee-Hwan Ji, Hi-Deok Lee, Sung-Hyung Park, Bin-Feng Huang, Sang-Bum Hu, Dae-Byung Kim, Jeong-Gun Lee
Publikováno v:
IEEE Transactions On Nanotechnology. 6:485-491
In this paper, novel Ni germanosilicide technology using NiPt alloy and Co overlayer has been proposed. Using the Co overlayer after NiPt deposition on Si1-xGex, the formation temperature of low resistive Ni germanosilicide is lowered with high therm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10b16acd0c9d15f4ab8fa6febef2f673
https://doi.org/10.1109/tnano.2007.897083
https://doi.org/10.1109/tnano.2007.897083
Autor:
Dae-Byung Kim, Sang-Bum Hu, Yong-Goo Kim, Jang-Gn Yun, Bin-Feng Huang, Heui-Seung Lee, Sungkweon Baek, Soon-Young Oh, Hee-Hwan Ji, Hi-Deok Lee, Hyunsang Hwang, Seong-Hyung Park, Jeong-Gun Lee, Ui-Sik Kim, Han-Seob Cha
Publikováno v:
IEEE Electron Device Letters. 26:90-92
In this letter, hydrogen plasma immersion ion implantation (H PIII) with Ni-Co-TiN tri-layer is introduced for the first time to enhance the thermal stability of the Ni-silicide for nanoscale CMOS technology. The Ni-silicided poly-Si gate and source/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63626ac1d0d80048d49ff58df4bdf19c
https://doi.org/10.1109/led.2004.841863
https://doi.org/10.1109/led.2004.841863
Autor:
Jeong-Gun Lee, Heui-Seung Lee, Bin-Feng Huang, Jang-Gn Yun, Dae-Byung Kim, Sang-Bum Hu, Seong-Hyung Park, Han-Seob Cha, Soon-Young Oh, Hee-Hwan Ji, Hi-Deok Lee, Ui-Sik Kim
Publikováno v:
4th IEEE Conference on Nanotechnology, 2004..
Highly thermal robust Ni-germanosilicide has been developed using the novel NiPt/Co/TiN tri-layer. Ni-germanosilicide properties were characterized with different source/drain dopants and Ge concentrations for nanoscale CMOSFETs application. The shee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5af3386624e30df061be94f6b66a4798
https://doi.org/10.1109/nano.2004.1392238
https://doi.org/10.1109/nano.2004.1392238
Autor:
Jang-Gn Yun, Bin-Feng Huang, Sang-Bum Hu, Hee-Hwan Ji, Hi-Deok Lee, Young-Ho Park, Seong-Hyung Park, Soon-Young Oh, Heui-Seung Lee, Han-Seob Cha, Ui-Sik Kim, Dae-Byung Kim, Jeong-Gun Lee
Publikováno v:
The Fourth International Workshop on Junction Technology, 2004. IWJT '04..
NiSi is an attractive silicide material to be applied in the nanoscale CMOSFETs. However, degradation of NiSi film after the post-silicidation annealing is one of serious demerits of NiSi. Ni/Co bi-layer is known as one of the most stable silicide st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::061f31f8bee4968dc4eff9bc8332f2a7
https://doi.org/10.1109/iwjt.2004.1306775
https://doi.org/10.1109/iwjt.2004.1306775
Autor:
Yong-Goo Kim, Heui-Seung Lee, Jang-Gn Yun, Ui-Sik Kim, Bin-Feng Huang, Seong-Hyung Park, Yong Jin Kim, Han-Seob Cha, Hee-Hwan Ji, Sang-Bum Hu, Hi-Deok Lee, Soon-Young Oh, Dae-Byung Kim, Yeong-Cheol Kim, Jeong-Gun Lee
Publikováno v:
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65b0a94cbc3b358c5994f2744d247360
https://doi.org/10.7567/ssdm.2004.p5-6
https://doi.org/10.7567/ssdm.2004.p5-6
Autor:
Won-Joon Ho, Yong-Goo Kim, Bin-Feng Huang, Jang-Gn Yun, Dae-Byung Kim, Jeong-Gun Lee, Seong-Hyung Park, Jin-Suk Wang, Sang-Bum Hu, Nak-Gyun Sung, Hee-Hwan Ji, Hi-Deok Lee, Mi-Suk Bae, Soon-Young Oh, Hun-Jin Lee, Hee Seung Lee
Publikováno v:
Electrochemical and Solid-State Letters. 7:G83
Nickel silicide is a most up-to-date self-aligned silicide (salicide) technology for nanoscale complementary metal-oxide-semiconductor field-effect transistors. However, an unintended oxidation of nickel silicide happenedonly on As-doped substrate. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8242c7aa5f9687ada4d4440f1e6e9e3
https://doi.org/10.1149/1.1649831
https://doi.org/10.1149/1.1649831
Autor:
Jang-Gn Yun, Soon-Young Oh, Hee-Hwan Ji, Bin-Feng Huang, Seong-Hyung Park, Heui-Seung Lee, Dae-Byung Kim, Ui-Sik Kim, Han-Seob Cha, Sang-Bum Hu, Jeong-Gun Lee, Hi-Deok Lee
Publikováno v:
4th IEEE Conference on Nanotechnology, 2004; 2004, p26-28, 3p
Autor:
Jang-Gin Yun, Soon-Young Oh, Bin-Feng Huang, Hee-Hwan Ji, Yong-Goo Kim, Seong-Hyung Park, Dae-Byung Kim, Ui-Sik Kim, Han-Seob Cha, Sang-Bum Hu, Jeong-Gun Lee, Sung-Kweon Baek, Hyun-Sang Hwang, Hi-Deok Lee
Publikováno v:
IEEE Electron Device Letters; Feb2005, Vol. 26 Issue 2, p90-92, 3p, 9 Graphs