Zobrazeno 1 - 10
of 119
pro vyhledávání: '"Sang Mo, Yang"'
Autor:
Myang Hwan Lee, Hae In Choi, Da Jeong Kim, Ji Su Kim, Sang Woo Lee, Yubin Park, Sang Mo Yang, Tae Kwon Song
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 9, Pp n/a-n/a (2024)
Abstract The relation between the improvement of mechanical quality factor (Qm) and internal electric field (Ei) generated during the aging process in lead‐free piezoelectric BiFeO3‐BaTiO3 ceramics is investigated for hard piezoelectric applicati
Externí odkaz:
https://doaj.org/article/d5814e9e87ee4a6e9c07f9593429cc2b
Autor:
Sang Won An, Seong Bin Bae, Beomjun Kim, Yoon Ki Kim, Jaeseung Kim, Tae Hyun Jung, Jae Heon Lee, Sang Woo Lee, Yu Bin Park, Hyunjung Kim, Hyobin Yoo, Sang Mo Yang
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 21, Pp n/a-n/a (2024)
Abstract Recently, HfO2‐based ferroelectric thin films have attracted widespread interest in developing next‐generation nonvolatile memories. To form a metastable ferroelectric orthorhombic phase in HfO2, a post‐annealing process is typically n
Externí odkaz:
https://doaj.org/article/3f71b7f4aa1840dd8cc8e70536e6308f
Publikováno v:
Advanced Science, Vol 10, Iss 19, Pp n/a-n/a (2023)
Abstract A polar tetragonal tungsten bronze, Pb1.91K3.22□0.85Li2.96Nb10O30 (□: vacancies), has been successfully synthesized by a high temperature solid‐state reaction. Single crystal and powder X‐ray diffraction indicate that the structure o
Externí odkaz:
https://doaj.org/article/8265526c77914d05bc24527e8f8e055f
Autor:
Saikat Das, Bo Wang, Ye Cao, Myung Rae Cho, Yeong Jae Shin, Sang Mo Yang, Lingfei Wang, Minu Kim, Sergei V. Kalinin, Long-Qing Chen, Tae Won Noh
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-9 (2017)
The properties of complex oxides such as strontium titanate are strongly affected by the presence and distribution of oxygen vacancies. Here, the authors demonstrate that a scanning probe microscope tip can be used to manipulate vacancies by the flex
Externí odkaz:
https://doaj.org/article/96cd412cb90043709174703128f73a3a
Autor:
Ahyoung Kim, Soo Yeon Lim, Jung Hyun Park, Jin-Seok Chung, Hyeonsik Cheong, Changhyun Ko, Jong-Gul Yoon, Sang Mo Yang
Publikováno v:
RSC Advances. 12:23039-23047
We investigated temperature-dependent nanoscale conduction in an epitaxial VO2 film grown on an Al2O3 substrate using conductive-atomic force microscopy and deep data analysis.
Autor:
Sang Mo Yang
Publikováno v:
Transactions of the Korean Society of Mechanical Engineers - A. 45:553-558
Autor:
Jun Han Lee, Nguyen Xuan Duong, Min‐Hyoung Jung, Hyun‐Jae Lee, Ahyoung Kim, Youngki Yeo, Junhyung Kim, Gye‐Hyeon Kim, Byeong‐Gwan Cho, Jaegyu Kim, Furqan Ul Hassan Naqvi, Jong‐Seong Bae, Jeehoon Kim, Chang Won Ahn, Young‐Min Kim, Tae Kwon Song, Jae‐Hyeon Ko, Tae‐Yeong Koo, Changhee Sohn, Kibog Park, Chan‐Ho Yang, Sang Mo Yang, Jun Hee Lee, Hu Young Jeong, Tae Heon Kim, Yoon Seok Oh
Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which lead to advances in multifunctional heterostructures. However, the defe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33d3db3c6b6e233462cea82f96118852
http://arxiv.org/abs/2209.05494
http://arxiv.org/abs/2209.05494
Autor:
Sang Mo Yang, Sung-Min Yoon, Solyee Im, Jong-Pil Im, Jiyong Woo, Jeong Hun Kim, Yeseul Lee, Yeriaron Kim, Seung Eon Moon, Dongwoo Suh
Publikováno v:
Current Applied Physics. 20:1441-1446
In this paper, we report stable polarization switching in metal-HfZrOx (HZO)-metal capacitors when pulses are repeatedly applied from the initial state. By examining various process parameters including annealing method, annealing temperature, and an
Publikováno v:
Current Applied Physics. 20:1185-1189
Understanding ferroelectric domain switching dynamics at the nanoscale is a great of importance in the viewpoints of fundamental physics and technological applications. Here, we investigated the intriguing polarity-dependent switching dynamics of fer
Publikováno v:
Science and Technology of Advanced Materials, Vol 16, Iss 3 (2015)
SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide–semiconductor silicon platform. Among functional oxides, ferroelectr
Externí odkaz:
https://doaj.org/article/37931c1b56ca4b6392dca9c18e65b870