Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Sang Ho Hwang"'
Publikováno v:
ACS Omega, Vol 8, Iss 40, Pp 36868-36875 (2023)
Externí odkaz:
https://doaj.org/article/f6b91f6fc59545448711791bb191f24d
Autor:
Yeong Jo Baek, In Hye Kang, Sang Ho Hwang, Ye Lin Han, Min Su Kang, Seok Jun Kang, Seo Gwon Kim, Jae Geun Woo, Eun Seong Yu, Byung Seong Bae
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract A vertical oxide thin-film transistor was developed with interfacial oxidation for low voltage operation. The gate metal was used as a spacer for the definition of the transistor’s channel as well as the gate electrode. After definition of
Externí odkaz:
https://doaj.org/article/6f7df80b54b44a8f92de897acee23ced
Autor:
In Hye Kang, Sang Ho Hwang, Young Jo Baek, Seo Gwon Kim, Ye Lin Han, Min Su Kang, Jae Geun Woo, Jong Mo Lee, Eun Seong Yu, Byung Seong Bae
Publikováno v:
ACS Omega, Vol 6, Iss 4, Pp 2717-2726 (2021)
Externí odkaz:
https://doaj.org/article/1ad9b77b8d0e4fab9cfa9702203a20cf
Background Early detection and intervention of developmental disabilities (DDs) are critical for improving the long-term outcomes of the afflicted children. Mobile-based applications are easily accessible and may thus help the early identification of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6a5452ea4fb5b15ed51bdc320d75bbf
https://doi.org/10.21203/rs.3.rs-993056/v1
https://doi.org/10.21203/rs.3.rs-993056/v1
Autor:
Ho Heon Kim, Sang Ho Hwang, Ilcheong Yi, Sambath Kao, Doo Ra Kim, Hyuk-Sang Sohn, Joo Hye Kim, Yejin Choi, Sangchul Yoon, Yu Rang Park
BACKGROUND In low- and middle-income countries (LMICs), policymakers and practitioners are increasingly focusing on the effectiveness of digital devices for medical and education services in children. However, several critical questions regarding the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d3eb13567153604c112f85b6adfe8f3
https://doi.org/10.2196/preprints.31206
https://doi.org/10.2196/preprints.31206
Publikováno v:
SID Symposium Digest of Technical Papers. 50:1341-1344
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aee9f5ca35c7c6845c7699e625606591
https://doi.org/10.1002/sdtp.13183
https://doi.org/10.1002/sdtp.13183
Publikováno v:
SID Symposium Digest of Technical Papers. 50:1345-1348
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::810d9864bfd0fe266f7001d96ca74339
https://doi.org/10.1002/sdtp.13184
https://doi.org/10.1002/sdtp.13184
BACKGROUND Early detection and intervention of developmental disabilities (DDs) are critical for improving the long-term outcomes of the afflicted children. Mobile-based applications are easily accessible and may thus help the early identification of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07fc51eb766375296ba2ae5e1dbe53e8
https://doi.org/10.2196/preprints.29908
https://doi.org/10.2196/preprints.29908
Publikováno v:
JMIR Pediatrics and Parenting.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7bfd2b838a848f2d1594beef7e6938f
https://doi.org/10.2196/29908
https://doi.org/10.2196/29908
Autor:
Yeong Jo Baek, In Hye Kang, Sang Ho Hwang, Ye Lin Han, Min Su Kang, Seok Jun Kang, Seo Gwon Kim, Jae Geun Woo, Eun Seong Yu, Byung Seong Bae
Publikováno v:
Scientific reports. 12(1)
A vertical oxide thin-film transistor was developed with interfacial oxidation for low voltage operation. The gate metal was used as a spacer for the definition of the transistor’s channel as well as the gate electrode. After definition of the vert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bd0e8127386f8e835da5d1e7cfb1181
https://pubmed.ncbi.nlm.nih.gov/35197520
https://pubmed.ncbi.nlm.nih.gov/35197520