Zobrazeno 1 - 10
of 105
pro vyhledávání: '"Sang Heung Lee"'
Publikováno v:
ETRI Journal, Vol 42, Iss 5, Pp 784-792 (2020)
AbstractIn this study, an E‐band low‐noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) has been designed using silicon‐germanium 130‐nm bipolar complementary metal‐oxide‐semiconductor technology to suppress unwanted sig
Externí odkaz:
https://doaj.org/article/b954632aaa8e46c89c0cdab35c42a8d7
Autor:
Sung-Jae Chang, Dong-Seok Kim, Tae-Woo Kim, Youngho Bae, Hyun-Wook Jung, Il-Gyu Choi, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Dong-Min Kang, Jong-Won Lim
Publikováno v:
Nanomaterials, Vol 13, Iss 5, p 898 (2023)
Recently, we reported that device performance degradation mechanisms, which are generated by the γ-ray irradiation in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs), use extremely thin gate insulators. When th
Externí odkaz:
https://doaj.org/article/3142430887454ec1bd26ee450c90f97a
Autor:
Jun-Hyeok Lee, Jeong-Min Ju, Gokhan Atmaca, Jeong-Gil Kim, Seung-Hyeon Kang, Yong Soo Lee, Sang-Heung Lee, Jong-Won Lim, Ho-Sang Kwon, Sefer Bora Lisesivdin, Jung-Hee Lee
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1179-1186 (2018)
In this paper, we investigated characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs) with high resistive buffer structure consisted of periodically carbon-doped (PCD) GaN buffer layer and AlGaN back barrier layer. The PCD structure
Externí odkaz:
https://doaj.org/article/8c41fbcf096a4460860a2390b0d9f155
Autor:
Soo Cheol Kang, Hyun-Wook Jung, Sung-Jae Chang, Seung Mo Kim, Sang Kyung Lee, Byoung Hun Lee, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim
Publikováno v:
Nanomaterials, Vol 10, Iss 11, p 2116 (2020)
An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF4 plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-g
Externí odkaz:
https://doaj.org/article/fe8bc6099d2b4c19bc414e2ed09b6d2e
Autor:
Sung-Jae Chang, Dong-Seok Kim, Tae-Woo Kim, Jung-Hee Lee, Youngho Bae, Hyun-Wook Jung, Soo Cheol Kang, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim
Publikováno v:
Nanomaterials, Vol 10, Iss 11, p 2175 (2020)
The device performance deterioration mechanism caused by the total ionizing dose effect after the γ-ray irradiation was investigated in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for a 5 nm-thick SiN and H
Externí odkaz:
https://doaj.org/article/18e43b84a212499da1141036540960f9
Publikováno v:
Micromachines, Vol 11, Iss 1, p 53 (2019)
In this study, we investigated the operational characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) by applying the copper-filled trench and via structures for improved heat dissipation. Therefore, we used a basic T-gate HEMT devic
Externí odkaz:
https://doaj.org/article/bc9168ac2cc246cc9e486868fc4a1e53
Autor:
Dong Min Kang, Zin-Sig Kim, Sang-Heung Lee, Sung-Bum Bae, Hyung Seok Lee, Hokyun Ahn, Jong-Won Lim
Publikováno v:
Journal of Nanoscience and Nanotechnology. 21:4429-4433
Devices based on AlGaN/GaN heterostructures, for example, Schottky barrier diodes (SBDs) and high electron mobility transistors (HEMTs), have been intensively investigated for applications to high-frequency and high-power areas. Presently, the substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3a0ddd434fbdd9c6c3eb1df6246fe81
https://doi.org/10.1166/jnn.2021.19421
https://doi.org/10.1166/jnn.2021.19421
Autor:
In-Tae Hwang, Kyu-Won Jang, Hyun-Jung Kim, Sang-Heung Lee, Jong-Won Lim, Jin-Mo Yang, Ho-Sang Kwon, Hyun-Seok Kim
Publikováno v:
Applied Sciences, Vol 9, Iss 17, p 3610 (2019)
This study investigates metal-insulator-semiconductor high electron mobility transistor DC characteristics with different gate dielectric layer compositions and thicknesses, and lattice temperature effects on gate leakage current by using a two-dimen
Externí odkaz:
https://doaj.org/article/e2bf21e545154bd3857134026acb959e
Publikováno v:
ETRI Journal, Vol 42, Iss 5, Pp 784-792 (2020)
In this study, an E‐band low‐noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) has been designed using silicon‐germanium 130‐nm bipolar complementary metal‐oxide‐semiconductor technology to suppress unwanted signal gain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6907d26bd8cb1339002ca3ca9c7d177a
https://doi.org/10.4218/etrij.2020-0118
https://doi.org/10.4218/etrij.2020-0118
Autor:
Sung-Jae Chang, Seong-Il Kim, Soo Cheol Kang, Kyu Jun Cho, Jong-Won Lim, Hae Cheon Kim, Hyun-Wook Jung, Sang-Heung Lee, Hokyun Ahn, Youn Sub Noh
Publikováno v:
ECS Transactions. 98:519-526
GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) are intensively investigated for high power, high frequency [1] and aerospace application [2] due to its wide bandgap, high breakdown field, and high carrier densi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8538bc1238c07702c4a659e03b4d2992
https://doi.org/10.1149/09805.0519ecst
https://doi.org/10.1149/09805.0519ecst