Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Sang Dae Choi"'
Autor:
Jae-Hyung Wi, Won Seok Han, Dae-Hyung Cho, Sang Dae Choi, Boo-Kyoung Kim, Ju-Yeoul Baek, Yong-Duck Chung, Woo-Jung Lee
Publikováno v:
Materials Science in Semiconductor Processing. 81:48-53
Chemical bath deposition (CBD)-ZnS is used as a buffer layer for Cu(In,Ga)Se2 (CIGS) solar cell and then, plasma damage originated from the negative oxygen ions or neutral particles with high energy is regarded as an important issue during subsequent
Publikováno v:
Applied Science and Convergence Technology. 25:73-76
Multi-layer films of SiN x /SiO x /InSnO with anti-reflective effect were grown by new-concept plasma enhanced chemical vapor deposition system (PECVD) with hybrid plasma source (HPS). Anti-reflective effect of SiN x /SiO x /InSnO was investigated as
Publikováno v:
Journal of the Korean Magnetics Society. 14:29-32
Magnetic properties are investigated for spin valves of Si/SiO/Ta(3 nm)/NiO(60 nm)/Co(2.5 nm)/Cu(1.95 nm)/Co(4.5 nm)/NOL(t nm ; Nano Oxide layer)/Ta(3 nm) with annealing. The annealing effect of spin valves with NOL are shown larger MR ratios from 10
Publikováno v:
Journal of the Korean Magnetics Society. 14:25-28
The dependence of sensitivity, MR ratio, coercivity (Hc) and switching fields as a function of thickness of each magnetic layers(Co, NiFe and Cu) were investigated in pseudo spin valves with a structure of Ta/NiFe/Cu/Co. As measured results dependenc
Publikováno v:
Journal of the Korean Magnetics Society. 12:231-234
Magnetic properties are investigated for top- and bottom-type spin valves of Si/SiO/NiO(60nm)/Co(2.5nm)/Cu(1.95nm)/Co(4.5nm)/NOL(t nm; Nano Oxide layer). The MR ratios of the bottom-type spin valves with NOL are larger than those of the top-type spin
Publikováno v:
Korean Journal of Anesthesiology. 8:245
Publikováno v:
Korean Journal of Anesthesiology. 8:265