Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Sang Cheol Jeon"'
Autor:
Changhoon Kim, Sungho Kim, Jin-Woo Han, Jae Sub Oh, Hyunjin Lee, Kwang Hee Kim, Yang-Kyu Choi, Gi Sung Lee, Yun Chang Park, Sang Cheol Jeon, Maesoon Im, Hee Mok Lee, Lee-Eun Yu
Publikováno v:
IEEE Electron Device Letters. 29:102-105
An ultimately scaled multiple-gate CMOS thin-film transistor with a polysilicon (poly-Si) nanowire demonstrates feasibility for vertical integration using multiple active layers for application in the terabit memory era. The short-channel effects are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::003dd418766c2ec977a99e44231d8b96
https://doi.org/10.1109/led.2007.911982
https://doi.org/10.1109/led.2007.911982
Publikováno v:
IEEE Photonics Technology Letters. 20:1455-1457
Photonic crystal (PC) slabs with triangular lattice constants of 230, 345, 460, and 690 nm have been fabricated onto InGaN-GaN multiquantum-well light-emitting diodes with a wavelength of 461 nm. For the shallow nanoholes in the depth range of 10-38.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dafad6390eabcd1220b840e09df1722
https://doi.org/10.1109/lpt.2008.927893
https://doi.org/10.1109/lpt.2008.927893
Autor:
Jae Sub Oh, Jung Jae Yoo, Yang-Kyu Choi, Gi Sung Lee, Hyunjin Lee, Lee-Eim Yu, Jim Mo Yang, Maesoon lm, Seong-Wan Ryu, Eujime Lee, Jin-Woo Han, Dong-il Bae, Kuk-Hwan Kim, Sungho Kim, Hee Mok Lee, Sang Cheol Jeon, Yun Chang Park, Chimgjin Kim, Woo Ho Bae, Ju-Hyun Kim, Kwang Hee Kim
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
Silicon nanowire-FET (SiNAWI-FET) for high performance logic device with consideration of current direction effects and terabit non-volatile memory (NVM) device using an 8 nm SiNAWI-NVM with oxide/nitride/oxide (ONO) and omega-gate structure is repor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f7893e90b1c73120cb3b93c216063e7
https://doi.org/10.1109/vlsit.2007.4339761
https://doi.org/10.1109/vlsit.2007.4339761
Publikováno v:
Journal of Applied Physics. 102:046105
Lattice defect structures embedded into perfect photonic crystal slabs have been fabricated onto the GaN surfaces of InGaN/GaN multi-quantum-well light-emitting diodes. The photonic crystal slab with a triangular lattice constant of 230 nm showed sup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fca10577080478616c6bde773e0d4bd
https://doi.org/10.1063/1.2769101
https://doi.org/10.1063/1.2769101
Publikováno v:
Applied Physics Letters. 90:181115
Triangular hole arrays with nanoscaled lattice constants of 230 and 460nm were fabricated on a p-type GaN epitaxial layer grown on an InGaN∕GaN multi-quantum-well light emitting diode structure by metal-organic chemical vapor deposition. The hole g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c207cc8175e042f7f7847fbb8091f18
https://doi.org/10.1063/1.2735927
https://doi.org/10.1063/1.2735927
Autor:
Maesoon Im, Jin-Woo Han, Hyunjin Lee, Lee-Eun Yu, Sungho Kim, Chang-Hoon Kim, Sang Cheol Jeon, Kwang Hee Kim, Gi Sung Lee, Jae Sub Oh, Yun Chang Park, Hee Mok Lee, Yang-Kyu Choi
Publikováno v:
IEEE Electron Device Letters; Jan2008, Vol. 29 Issue 1, p102-105, 4p, 1 Chart, 1 Graph
Publikováno v:
IEEE Photonics Technology Letters; 9/1/2008, Vol. 20 Issue 17, p1455-1457, 3p
Autor:
Hyunjin Lee, Seong-Wan Ryu, Jin-Woo Han, Lee-Eim Yu, Maesoon lm, Chimgjin Kim, Sungho Kim, Eujime Lee, Kuk-Hwan Kim, Ju-Hyun Kim, Dong-il Bae, Sang Cheol Jeon, Kwang Hee Kim, Gi Sung Lee, Jae Sub Oh, Yun Chang Park, Woo Ho Bae, Jung Jae Yoo, Jim Mo Yang, Hee Mok Lee
Publikováno v:
2007 IEEE Symposium on VLSI Technology; 2007, p144-145, 2p
Autor:
Hyunjin Lee, Lee-Eun Yu, Seong-Wan Ryu, Jin-Woo Han, Kanghoon Jeon, Dong-Yoon Jang, Kuk-Hwan Kim, Jiye Lee, Ju-Hyun Kim, Sang Cheol Jeon, Gi Seong Lee, Jae Sub Oh, Yun Chang Park, Woo Ho Bae, Hee Mok Lee, Jun Mo Yang, Jung Jae Yoo, Sang Ik Kim, Yang-Kyu Choi
Publikováno v:
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.; 2006, p58-59, 2p