Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Sang Bom Kang"'
Autor:
Sun Woong Kim, D.-H. Ko, Sang-Bom Kang, Joong Kyong Ahn, Choi Seungbum, Dong-ho Ahn, J.H. Park, Jae-myung Lee, Zhenhua Wu, Jung-Sung Kim
Publikováno v:
Thin Solid Films. 612:135-140
Phase Change Memory (PCM) has the potential for use as the flash memories for the next generation due to its scalability, long endurance, high speed, and the possibility of random access. To successfully integrate phase change materials of a GeSbTe (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d2a0e240d1464f5f1872002d2724c31
https://doi.org/10.1016/j.tsf.2016.05.042
https://doi.org/10.1016/j.tsf.2016.05.042
Autor:
Ju Young Yun, Gil Heyun Choi, Sang Bom Kang, U In Chung, Jung-Hun Seo, Joo Tae Moon, Jong-Myeong Lee, Byung Hee Kim
Publikováno v:
Japanese Journal of Applied Physics. 42:1874-1876
The contact resistance between Ti/TiN and a Ru electrode in metal-1/plate contacts of ruthenium insulator silicon (RIS) capacitor is investigated. When physical vapor deposition (PVD) Ti/TiN was used as a barrier metal for the metal contact process,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe303fc7d69e4f726dff0dda99073f46
https://doi.org/10.1143/jjap.42.1874
https://doi.org/10.1143/jjap.42.1874
Autor:
D. K. Sohn, Y.K. Bae, Y.D. Lim, Yohan Kim, J.G. Hong, C. Ryou, Soon-yeon Park, C.G. Koh, Jae Gon Lee, Jung-Chak Ahn, S. Hyun, Byung-chan Lee, Sangjoo Lee, Yang-Soo Son, D.H. Cha, C.L. Cheng, Sung-dae Suk, S.W. Nam, H.-J. Cho, J.S. Yoon, Won-Jun Jang, M. Sadaaki, Ming Li, S.H. Hong, Wouns Yang, Sang-pil Sim, Dong-Won Kim, S. Choi, Jung-In Hong, Won-Cheol Jeong, B. U. Yoon, Hwa-Sung Rhee, Min-Sang Kim, Chilhee Chung, Daphnee Hui Lin Lee, Sang-Bom Kang, Kang-ill Seo, Hee-Soo Kang
Publikováno v:
2011 International Electron Devices Meeting.
A 20 nm logic device technology for low power and high performance application is presented with the smallest contacted-poly pitch (CPP) of minimal 80 nm ever reported in bulk Si planar device. We have achieved nFET and pFET drive currents of 770 µA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54cdf33871f7ca3ae9bad66959de4b4c
https://doi.org/10.1109/iedm.2011.6131556
https://doi.org/10.1109/iedm.2011.6131556
Autor:
Kang-ill Seo, Jongwan Choi, Sang-pil Sim, Yangsoo Sohn, Seung-Hun Lee, Kwan-Heum Lee, Si-Young Choi, Chulgi Song, Kyungseok Oh, Junghyun Park, Choongryul Ryu, Tae-Ouk Kwon, Chilhee Chung, Hyun-Jung Lee, Sang Bom Kang, Hee-Kyung Jeon, Wookje Kim, Seok-Hoon Kim, Kwan-Yong Lim, Uihui Kwon, Hong-Sik Yoon, Chung Geun Koh, Jinyeong Cho, Eunha Lee
Publikováno v:
2010 International Electron Devices Meeting.
High-k/metal gate (HKMG) compatible high performance Source/Drain (S/D) stress-memorization-technology (SMT) is presented. Channel stress generated by SMT can be simulated by using mask-edge dislocation model, which is consistent with the measured ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02e6b4230fa3503bbb1506cff204de55
https://doi.org/10.1109/iedm.2010.5703332
https://doi.org/10.1109/iedm.2010.5703332
Autor:
Sang-Bom Kang, Joo-Tae Moon, In Sang Jeon, Si-Young Choi, U-In Chung, Kab-Jin Nam, Dong Chan Kim, Byung-Il Ryu, Hye-Lan Lee, Ji-Hyun Kim, Soo-Ik Jang, Sang-Jin Hyun, Sug-hun Hong, Hye-min Kim
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
For the first time, we have successfully integrated HfSiON gate dielectric to DRAM and obtained excellent data retention time. Lower gate leakage current and better mobility of HfSiON than plasma nitrided oxide resulted in a 22% smaller propagation d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::162ab452f25fe75ebe824dfbc11216b3
https://doi.org/10.1109/vlsit.2007.4339685
https://doi.org/10.1109/vlsit.2007.4339685
Autor:
In-Sang Jeon, Seok-Hun Hyun, U. I. Chung, S. Choi, Kab-Jin Nam, June Moon, Sang-Bom Kang, Sun-Ghil Lee, Jumi Kim, Dong Chan Kim
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
This paper reports the reliability characteristics of poly gated n-MOSFETs with HfSiON and SiON gate dielectrics in both thin and thick oxide of dual gate oxide scheme. Hot carrier stress (HCS) at Isub, max condition on thick oxide is found to be the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c4546cace175e36ffe5dd0b0da02116
https://doi.org/10.1109/relphy.2007.369981
https://doi.org/10.1109/relphy.2007.369981
Autor:
Seong Geon Park, Yunseok Kim, Sang Bom Kang, Nae-In Lee, Hyung-Suk Jung, Hajin Lim, Ho-Kyu Kang, Min-Joo Kim, Jong Pyo Kim, Seok Joo Doh, Jong-Ho Lee, Jung Hyoung Lee, Sung Kee Han
Publikováno v:
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
For the first time, we evaluated the breakdown and conduction mechanisms of ALD HfSiON with TaN gate. In the unstressed HfSiON, hole current dominates the gate leakage current. Under the SILC condition, the electron trap generation from the band edge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c591706d906d46a8b3c6c78e9c92c7fe
https://doi.org/10.1109/relphy.2005.1493177
https://doi.org/10.1109/relphy.2005.1493177
Autor:
Jong Pyo Kim, Sung Kee Han, Jong-Ho Lee, Nae-In Lee, Min-Joo Kim, Yunseok Kim, Sang Bom Kang, Mi Young Yu, Jung Hyoung Lee, Hyung-Suk Jung, Seok Joo Doh, Ha Jin Lim, Seong Geon Park, Ho-Kyu Kang
Publikováno v:
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
Reliability characteristics of high-k gate dielectrics with poly-Si gates and metal inserted poly-Si stack (MIPS) gates are investigated in terms of positive bias temperature instability (PBTI) and hot carrier injection (HCI) characteristics. The res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e650c30066eefc7d5106dc36f115a06b
https://doi.org/10.1109/relphy.2005.1493061
https://doi.org/10.1109/relphy.2005.1493061
Autor:
June Moon, Sang-Bom Kang, Hong-Sick Park, Beom-jun Jin, Jung-Hyoung Lee, Yun-Seung Shin, Taek-Soo Jeon, In-Soo Jung, Sangjoo Lee, Y.S. Jeong, Yoohwan Kim, Seonghye Park, J.H. Choi, Hyung-Jong Lee, U. I. Chung, H.-J. Cho
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
The effects of TaN metal-gate thickness on the electrical characteristics of poly-Si/metal-gate/HfSiON MOSFETs have been investigated. Too thin TaN was reactive with poly-Si gate, which led to the formation of Si-doped metal gate. As a result, the wo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf8128c9bc3b2a4f6a6d01792d141433
https://doi.org/10.1109/iedm.2004.1419201
https://doi.org/10.1109/iedm.2004.1419201
Autor:
Seong Geon Park, Taek Soo Jeon, Yu Gyun Shin, Hag-Ju Cho, Joo Tae Moon, Sang-Yong Kim, Beom Jun Jin, Hye Lan Lee, U-In Chung, Soo Ik Jang, Hong-bae Park, Sang Bom Kang
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
In this work, HfSiON gate dielectric is integrated for the first time in dual gate oxide of DRAM with recess channel arrary transistor (RCAT) and W/poly-Si gate for the development of sub-60nm DRAM technology. No degradation of cell transistor charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2c2a52f96bfc06328ee61cdfdcd53ed
https://doi.org/10.1109/iedm.2004.1419204
https://doi.org/10.1109/iedm.2004.1419204