Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Sang‐Hyeok Yang"'
Autor:
Soo Ho Choi, Sang-Hyeok Yang, Sehwan Park, Byeong Wook Cho, Tuan Dung Nguyen, Jung Ho Kim, Young-Min Kim, Ki Kang Kim, Young Hee Lee
Publikováno v:
APL Materials, Vol 11, Iss 11, Pp 111124-111124-8 (2023)
Chemical vapor deposition (CVD) can produce wafer-scale transition-metal dichalcogenide (TMD) monolayers for the integration of electronic and optoelectronic devices. Nonetheless, the material quality of the CVD-grown TMDs still remains controversial
Externí odkaz:
https://doaj.org/article/21aff16e97294e0ea6c7e8ec536012cc
Autor:
Hanhwi Jang, Jong Ho Park, Ho Seong Lee, Byungki Ryu, Su‐Dong Park, Hyeon‐Ah Ju, Sang‐Hyeok Yang, Young‐Min Kim, Woo Hyun Nam, Heng Wang, James Male, Gerald Jeffrey Snyder, Minjoon Kim, Yeon Sik Jung, Min‐Wook Oh
Publikováno v:
Advanced Science, Vol 8, Iss 20, Pp n/a-n/a (2021)
Abstract Thermoelectric properties are frequently manipulated by introducing point defects into a matrix. However, these properties often change in unfavorable directions owing to the spontaneous formation of vacancies at high temperatures. Although
Externí odkaz:
https://doaj.org/article/7faeb47bddef4000a6c999c5996c0392
Autor:
Sang‐Hyeok Yang, Wooseon Choi, Byeong Wook Cho, Frederick Osei‐Tutu Agyapong‐Fordjour, Sehwan Park, Seok Joon Yun, Hyung‐Jin Kim, Young‐Kyu Han, Young Hee Lee, Ki Kang Kim, Young‐Min Kim
Publikováno v:
Advanced Science, Vol 8, Iss 16, Pp n/a-n/a (2021)
Abstract Atomic dopants and defects play a crucial role in creating new functionalities in 2D transition metal dichalcogenides (2D TMDs). Therefore, atomic‐scale identification and their quantification warrant precise engineering that widens their
Externí odkaz:
https://doaj.org/article/6003e2c1bc4b4a29918a9debd16cdd7e
Autor:
Jung A. Hong, Min-Hyoung Jung, Sung Yong Cho, Eun-Byeol Park, Daehee Yang, Young-Hoon Kim, Sang-Hyeok Yang, Woo-Sung Jang, Jae Hyuck Jang, Hyo June Lee, Sungchul Lee, Hu Young Jeong, Young-Min Kim
Publikováno v:
Journal of Energy Chemistry. 74:359-367
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efd5f6533f23e4c10107690c0b567a10
https://doi.org/10.1016/j.jechem.2022.07.036
https://doi.org/10.1016/j.jechem.2022.07.036
Autor:
Seunghun Kang, Woo-Sung Jang, Anna N. Morozovska, Owoong Kwon, Yeongrok Jin, Young-Hoon Kim, Hagyoul Bae, Chenxi Wang, Sang-Hyeok Yang, Alex Belianinov, Steven Randolph, Eugene A. Eliseev, Liam Collins, Yeehyun Park, Sanghyun Jo, Min-Hyoung Jung, Kyoung-June Go, Hae Won Cho, Si-Young Choi, Jae Hyuck Jang, Sunkook Kim, Hu Young Jeong, Jaekwang Lee, Olga S. Ovchinnikova, Jinseong Heo, Sergei V. Kalinin, Young-Min Kim, Yunseok Kim
Publikováno v:
Science. 376:731-738
Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO 2 )–based ferroelectrics that are compatible with atomic-l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f9cae0126ed38d6e281bf67187c97cc
https://doi.org/10.1126/science.abk3195
https://doi.org/10.1126/science.abk3195
Publikováno v:
Applied Catalysis B: Environmental. 322:122140
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f40798d43cb8141ae18c8c32d0f97008
https://doi.org/10.1016/j.apcatb.2022.122140
https://doi.org/10.1016/j.apcatb.2022.122140
Autor:
Young-Hoon, Kim, Sang-Hyeok, Yang, Myoungho, Jeong, Min-Hyoung, Jung, Daehee, Yang, Hyangsook, Lee, Taehwan, Moon, Jinseong, Heo, Hu Young, Jeong, Eunha, Lee, Young-Min, Kim
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 18(18)
By controlling the configuration of polymorphic phases in high-k Hf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::9407d03a750cea3c5bd4b428d2802149
https://pubmed.ncbi.nlm.nih.gov/35373528
https://pubmed.ncbi.nlm.nih.gov/35373528
Autor:
Seok Joon Yun, Byeong Wook Cho, Thapa Dinesh, Dae Hee Yang, Yong In Kim, Jeong Won Jin, Sang‐Hyeok Yang, Tuan Dung Nguyen, Young‐Min Kim, Ki Kang Kim, Dinh Loc Duong, Seong‐Gon Kim, Young Hee Lee
Publikováno v:
Advanced Materials. 34
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93914aa5b7a38de950b08271e84adeda
https://doi.org/10.1002/adma.202106551
https://doi.org/10.1002/adma.202106551
Autor:
Seok Joon, Yun, Byeong Wook, Cho, Thapa, Dinesh, Dae Hee, Yang, Yong In, Kim, Jeong Won, Jin, Sang-Hyeok, Yang, Tuan Dung, Nguyen, Young-Min, Kim, Ki Kang, Kim, Dinh Loc, Duong, Seong-Gon, Kim, Young Hee, Lee
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 34(10)
Magnetic order has been proposed to arise from a variety of defects, including vacancies, antisites, and grain boundaries, which are relevant in numerous electronics and spintronics applications. Nevertheless, its magnetism remains controversial due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::4a16e83f877e2ca76ba46e6fad22f2e6
https://pubmed.ncbi.nlm.nih.gov/34962658
https://pubmed.ncbi.nlm.nih.gov/34962658
Autor:
Byungki Ryu, Hanhwi Jang, Woo Hyun Nam, Su Dong Park, Minjoon Kim, Hyeon Ah Ju, Min-Wook Oh, Gerald Jeffrey Snyder, James P. Male, Young-Min Kim, Ho Seong Lee, Heng Wang, Jongho Park, Yeon Sik Jung, Sang Hyeok Yang
Publikováno v:
Advanced Science, Vol 8, Iss 20, Pp n/a-n/a (2021)
Advanced Science
Advanced Science
Thermoelectric properties are frequently manipulated by introducing point defects into a matrix. However, these properties often change in unfavorable directions owing to the spontaneous formation of vacancies at high temperatures. Although it is cru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84745c678bfa0a04a4731fc576c0b957
https://doaj.org/article/7faeb47bddef4000a6c999c5996c0392
https://doaj.org/article/7faeb47bddef4000a6c999c5996c0392