Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Sanford Chu"'
Publikováno v:
Solid-State Electronics. 50:1219-1226
This paper presents the effects of technology and geometry scaling on the 1/f noise performance of deep submicrometer transistors taken from four advanced CMOS technologies, namely the 0.13 μm, 0.18 μm, 0.25 μm and 0.35 μm nodes. For the 0.13 μm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7264834684c99ba2abc79259a90c84b9
https://doi.org/10.1016/j.sse.2006.07.004
https://doi.org/10.1016/j.sse.2006.07.004
Publikováno v:
IEEE Transactions on Electron Devices. 52:1399-1409
The relentless drive toward high-speed and high-density silicon-based integrated circuits (ICs) has necessitated significant advances in processing technology. The entrance of copper metallization in IC manufacturing has resulted in new challenges in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::442af06725506c8cc50130a57bb6636e
https://doi.org/10.1109/ted.2005.850642
https://doi.org/10.1109/ted.2005.850642
Publikováno v:
Semiconductor Science and Technology. 19:870-876
The dc tunnel current–voltage method (tunnel DCIV) is demonstrated in this paper as a potential diagnostic monitor for process parameter variations of future generations of metal-oxide-silicon transistors. An example is given of p-channel metal-oxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3c0bec4617b454ce9fc08819f03e939
https://doi.org/10.1088/0268-1242/19/7/016
https://doi.org/10.1088/0268-1242/19/7/016
Publikováno v:
Japanese Journal of Applied Physics. 42:2144-2148
High performance 0.1 µm metal oxide semiconductor field effect transistors (MOSFETs) with 70 nm physical gate length and 1.7 nm gate oxide thickness are demonstrated. By reducing the parasitic junction capacitance and suppressing the junction leakag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0611f571cf22dfbfcdc2c40a1b549977
https://doi.org/10.1143/jjap.42.2144
https://doi.org/10.1143/jjap.42.2144
Autor:
Robert Fox, David P. Brunco, Konrad Seidel, Rod Miller, Dina H. Triyoso, Carl Kyono, Kok-Yong Yiang, Patrick Lomtscher, Maik Liebau, Sanford Chu, Jeasung Park, Cheng Lili, Jochen Rinderknecht, Dirk Utess, Wenke Weinreich, Mark Gerard Nolan
Publikováno v:
Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
As operating frequency and circuit density of VLSI systems continue to increase, the L*di/dt induced voltage fluctuations in the power grid increasingly becomes a source of voltage/timing problems. On-chip decoupling capacitors, placed in close proxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f125ef2723bd1f3cb462c66d8aa6f851
https://doi.org/10.1109/vlsi-tsa.2014.6839694
https://doi.org/10.1109/vlsi-tsa.2014.6839694
Autor:
Dina H. Triyoso, Mark Gerard Nolan, Kok-Yong Yiang, Patrick Polakowski, Konrad Seidel, Wenke Weinreich, Sanford Chu
Publikováno v:
2013 IEEE International Integrated Reliability Workshop Final Report.
In this paper, the authors have shown that the Al-doping concentration of ZrO2 based dielectrics in BEOL has a big influence on electrical properties and reliability. Despite steep field acceleration behavior undoped ZrO2 suffers from early failures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc4fa16e3a7959090f87e09450abbc76
https://doi.org/10.1109/iirw.2013.6804190
https://doi.org/10.1109/iirw.2013.6804190
Publikováno v:
IEEE Electron Device Letters. 25:311-313
This letter investigates major sources of asymmetry in a MOSFET compact model by comparing source versus bulk reference in the drain current, effective field, and effective mobility equations. Contrary to the general belief that a regional threshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b483b1a8d2b07b6bd593408e6493043
https://doi.org/10.1109/led.2004.826513
https://doi.org/10.1109/led.2004.826513
Autor:
Guan Hui Lim, Guan Huei See, Liang-Choo Hsia, Zhaomin Zhu, S.C. Rustagi, Xing Zhou, Michael Chye Huat Cheng, Sanford Chu, Siau Ben Chiah, K. Chandrasekaran, Shihuan Lin, Chengqing Wei
Publikováno v:
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.
MOSFETs have been the building blocks of modern VLSI for decades. As classical bulk-CMOS scaling is approaching its physical limit, various types of non-classical CMOS emerge. Although different in structure, topology, and operation, different types
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4b87571b7c6f51ff97d11056aeb480c
https://doi.org/10.1109/icsict.2006.306073
https://doi.org/10.1109/icsict.2006.306073
Publikováno v:
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).
Gate poly dimension control is one of the most critical processing conditions to device yield, because it directly determines the transistor characteristics. For a particular deep submicron CMOS analog product, it is identified that low gate poly dim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4b048412fd93b69758f8685899a357a
https://doi.org/10.1109/icsict.2001.981429
https://doi.org/10.1109/icsict.2001.981429
Autor:
B. Shen, A. Yin, Guan-Ping Wu, Chit-Hwei Ng, Sanford Chu, Kok-Wai Chew, Kai Shao, Zhe-Yuan Zheng, N. Tan
Publikováno v:
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).
Two different material plates used for a high density metal-insulator-metal (MIM) capacitor (1.0 fF//spl mu/m/sup 2/) top plate are studied. The two MIM capacitor process differences are compared. Their processes are very compatible with standard log
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88cb5950d2bf344c49228031227d3c7a
https://doi.org/10.1109/icsict.2001.981465
https://doi.org/10.1109/icsict.2001.981465