Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Sandro Rao"'
Autor:
Sandro Rao, Elisa D. Mallemace, Giuliana Faggio, Mario Iodice, Giacomo Messina, Francesco G. Della Corte
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-8 (2023)
Abstract The design of semiconductor-based photonic devices requires precise knowledge of the refractive index of the optical materials, a not constant parameter over the operating temperature range. However, the variation of the refractive index wit
Externí odkaz:
https://doaj.org/article/8e0f1379c15940caa4c854be7d24192d
Autor:
Sandro Rao, Elisa D. Mallemace, Giuseppe Cocorullo, Giuliana Faggio, Giacomo Messina, Francesco G. Della Corte
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-7 (2022)
Abstract The refractive index and its variation with temperature, i.e. the thermo-optic coefficient, are basic optical parameters for all those semiconductors that are used in the fabrication of linear and non-linear opto-electronic devices and syste
Externí odkaz:
https://doaj.org/article/5e666eb1555d43c1823028cc5fa68058
Autor:
Francesco Della Corte, Giovanni Pangallo, Riccardo Carotenuto, Demetrio Iero, Giuseppe Marra, Massimo Merenda, Sandro Rao
Publikováno v:
IEEE Access, Vol 8, Pp 43057-43066 (2020)
A detailed study about the direct measurement of junction temperature Ti of off-the-shelf power light emitting diodes (LED) is presented. The linear dependence on temperature of the voltage drop across the device terminals at a constant current is in
Externí odkaz:
https://doaj.org/article/b34cd277a44f4fac841e05bbc7b1a7ae
Autor:
Demetrio Iero, Massimo Merenda, Riccardo Carotenuto, Giovanni Pangallo, Sandro Rao, Gheorghe Brezeanu, Francesco G. Della Corte
Publikováno v:
Sensors, Vol 21, Iss 9, p 3113 (2021)
Extending the lifetime of power light-emitting diodes (LEDs) is achievable if proper control methods are implemented to reduce the side effects of an excessive junction temperature, TJ. The accuracy of state-of-the-art LED junction temperature monito
Externí odkaz:
https://doaj.org/article/c072a7030a9d4f7e8d178a008fc2c67a
Autor:
Milena Moretti, Silvia Pondrelli, Lucia Margheriti, Luigi Abruzzese, Mario Anselmi, Pierre Arroucau, Paola Baccheschi, Brian Baptie, Raffaele Bonadio, Andrea Bono, Augusto Bucci, Mauro Buttinelli, Marco Capello, Vincenzo Cardinale, Angelo Castagnozzi, Marco Cattaneo, Gianpaolo Cecere, Claudio Chiarabba, Lauro Chiaraluce, Giovanni Battista Cimini, Rocco Cogliano, Gianfranco Colasanti, Marco Colasanti, Fabio Criscuoli, Ezio D’Alema, Antonino D’Alessandro, Ciriaco D’Ambrosio, Peter Danecek, Mariagrazia De Caro, Pasquale De Gori, Alberto Delladio, Gaetano De Luca, Giovanni De Luca, Martina Demartin, Maria Di Nezza, Raffaele Di Stefano, Luigi Falco, Massimo Fares, Massimo Frapiccini, Alberto Frepoli, Danilo Galluzzo, Edoardo Giandomenico, Lucian Giovani, Carlo Giunchi, Aladino Govoni, David Hawthorn, Chiara Ladina, Valentino Lauciani, Anthony Lindsay, Simone Mancini, Alfonso Giovanni Mandiello, Simone Marzorati, Marco Massa, Antonino Memmolo, Franco Migliari, Felice Minichiello, Giancarlo Monachesi, Caterina Montuori, Raffaele Moschillo, Shane Murphy, Nicola Mauro Pagliuca, Marina Pastori, Davide Piccinini, Ulderico Piccolini, Stefano Pintore, Giulio Poggiali, Sandro Rao, Gilberto Saccorotti, Margarita Segou, Andrea Serratore, Marcello Silvestri, Stefano Silvestri, Massimiliano Vallocchia, Luisa Valoroso, Luciano Zuccarello, Alberto Michelini, Salvatore Mazza
Publikováno v:
Annals of Geophysics, Vol 59, Iss 0 (2016)
At 01:36 UTC (03:36 local time) on August 24th 2016, an earthquake Mw 6.0 struck an extensive sector of the central Apennines (coordinates: latitude 42.70° N, longitude 13.23° E, 8.0 km depth). The earthquake caused about 300 casualties and severe
Externí odkaz:
https://doaj.org/article/0854a555acaa4fdf88b9194afedfd8bc
Publikováno v:
Sensors, Vol 16, Iss 1, p 67 (2016)
Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on
Externí odkaz:
https://doaj.org/article/6555fa959ee942bd9144f1444489863a
Autor:
Elisa Demetra Mallemace, Sandro Rao, Maurizio Casalino, Mario Iodice, Giuliana Faggio, Giacomo Messina, Francesco Giuseppe Della Corte
Publikováno v:
Materials Science Forum. 1089:81-85
The growing interest for the use of 4H-SiC in photonics is triggering the interest for more accurate characterizations of this semiconductor from the optical and opto-electronic point of view. In this work we report about new measurements run on an u
Autor:
Elisa Demetra Mallemace, Teresa Crisci, Francesco Giuseppe Della Corte, Sandro Rao, Maurizio Casalino
Publikováno v:
2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME).
Publikováno v:
Electronics; Volume 11; Issue 12; Pages: 1839
In this work, the optical response of a high−performance 4H−SiC−based p−i−n ultraviolet (UV) photodiode was studied by means of an ad hoc numerical model. The spectral responsivity and the corresponding external photodiode quantum efficienc
Autor:
Marcello D'Agostino, Sandro Rao, Gianpaolo Cecere, Giulio Selvaggi, Raffaele Di Stefano, L. Falco, Peter Danecek, Anna Nardi, Salvatore Alparone, Paola Baccheschi, Francesco Zanolin, Marco Cattaneo, Milena Moretti, Aldo Benincasa, Licia Faenza, Sergio Di Prima, Vincenzo Sepe, Christian Bignami, Valentino Lauciani, Placido Montalto, Matteo Quintiliani, Annamaria Vicari, Ciriaco D'Ambrosio, Walter De Cesare, Stefano Pintore, Carmelo Cassisi, Francesco Mariano Mele, Andrea Bono, Maria Concetta Lorenzino, P. Ricciolino, Maurizio Pignone, Gianpaolo Sensale, Mario Castellano, Rosario Peluso, Eugenio Privitera, Alessandro Marchetti, Marina Pastori, Stefano Branca, Michele Prestifilippo, Emiliano Della Bina, Alberto Michelini, Francesca Bianco, Francesca Cirilli, Adriano Azzarone, Luisa Valoroso, Salvatore Stramondo, Ornella Cocina, O. Torrisi, Alfonso Giovanni Mandiello, Massimo Fares, Marco Aliotta, Concetta Nostro, Laura Scognamiglio, Alessandro Di Filippo, Giovanni Scarpato, Salvatore Mazza, Diana Latorre, Lucia Margheriti, Massimo Orazi, Emanuele Casarotti, Ivano Carluccio, Pietro Ficeli, Alessandro Amato, Barbara Castello, Fabrizio Bernardi, Antonio Piersanti
Publikováno v:
Seismological Research Letters. 92:1659-1671
The Istituto Nazionale di Geofisica e Vulcanologia (INGV) is an Italian research institution with focus on earth sciences. Moreover, the INGV is the operational center for seismic surveillance and earthquake monitoring in Italy and is a part of the c