Zobrazeno 1 - 10
of 126
pro vyhledávání: '"Sandrine Juillaguet"'
Autor:
Felipe Wasem Klein, Jean-Roch Huntzinger, Vincent Astié, Damien Voiry, Romain Parret, Houssine Makhlouf, Sandrine Juillaguet, Jean-Manuel Decams, Sylvie Contreras, Périne Landois, Ahmed-Azmi Zahab, Jean-Louis Sauvajol, Matthieu Paillet
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 15, Iss 1, Pp 279-296 (2024)
Raman spectroscopy is a widely used technique to characterize nanomaterials because of its convenience, non-destructiveness, and sensitivity to materials change. The primary purpose of this work is to determine via Raman spectroscopy the average thic
Externí odkaz:
https://doaj.org/article/3677c87bfc5c47bda87bbc0b0dce2c8d
Autor:
Leszek Konczewicz, Malgorzata Iwinska, Elzbieta Litwin-Staszewska, Marcin Zajac, Henryk Turski, Michal Bockowski, Dario Schiavon, Mikołaj Chlipała, Sandrine Juillaguet, Sylvie Contreras
Publikováno v:
Materials, Vol 15, Iss 20, p 7069 (2022)
This paper presents low-temperature measurements of magnetoresistivity in heavily doped n-type GaN grown by basic GaN growth technologies: molecular beam epitaxy, metal-organic vapor phase epitaxy, halide vapor phase epitaxy and ammonothermal. Additi
Externí odkaz:
https://doaj.org/article/3e7c127b46f54107a30f1590bf4df5be
Autor:
Leszek Konczewicz, Sandrine Juillaguet, Marcin Zajac, Elzbieta Litwin-Staszewska, Mohamed Al Khalfioui, Mathieu Leroux, Benjamin Damilano, Julien Brault, Sylvie Contreras
Publikováno v:
physica status solidi (a). :2200769
Autor:
Robert Kucharski, Elzbieta Litwin-Staszewska, Leszek Konczewicz, Maciej Zajac, Sandrine Juillaguet, M. Iwinska, Sylvie Contreras
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2021, 129 (13), pp.135702. ⟨10.1063/5.0038524⟩
Journal of Applied Physics, American Institute of Physics, 2021, 129 (13), pp.135702. ⟨10.1063/5.0038524⟩
International audience; Zinc is often regarded as an alternative to magnesium p-type dopants in gallium nitride. However, besides many theoretical predictions, at present, there are poor data on experimentally revealed p-type conductivity and evaluat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::310fd5af39aa8dcb47877ba8454d4bdb
https://hal.archives-ouvertes.fr/hal-03252835
https://hal.archives-ouvertes.fr/hal-03252835
Autor:
Marcin Zielinski, Sylvie Contreras, Leszek Konczewicz, J. Ben Messaoud, Thierry Chassagne, Tianlin Wang, Sandrine Juillaguet, Hervé Peyre, Roxana Arvinte
Publikováno v:
Materials Science Forum. 897:275-278
Comparative study of p-type 4H-SiC epitaxial layers grown simultaneously on two different 4H-SiC substrates, namely n-type and semi-insulating have been done by different structural, optical and electrical experimental techniques.
Autor:
K. Baskar, Leszek Konczewicz, Sandrine Juillaguet, M. Jayasakthi, Hervé Peyre, Sylvie Contreras
Publikováno v:
Superlattices and Microstructures
Superlattices and Microstructures, Elsevier, 2016, 98, pp.515-521. ⟨10.1016/j.spmi.2016.08.053⟩
Superlattices and Microstructures, Elsevier, 2016, 98, pp.515-521. ⟨10.1016/j.spmi.2016.08.053⟩
AlGaN/AlN layers were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The AlN buffer thickness was varied from 400 nm to 800 nm. The AlGaN layer thickness was 1000 nm. The crystalline quality, thickness and composition
Autor:
Marc Portail, Adrien Michon, Pawel Kwasnicki, Marcin Zielinski, Sylvie Contreras, Thierry Chassagne, Hervé Peyre, Sandrine Juillaguet, Leszek Konczewicz, Roxana Arvinte
Publikováno v:
ICSCRM
ICSCRM, Oct 2015, Giardini Naxos, France. pp.137-142, ⟨10.4028/www.scientific.net/MSF.858.137⟩
ICSCRM, Oct 2015, Giardini Naxos, France. pp.137-142, ⟨10.4028/www.scientific.net/MSF.858.137⟩
Exhaustive experimental study of aluminum incorporation in epitaxial 4H-SiC and 3C‑SiC films grown by chemical vapor deposition (CVD) was performed. The influence of polytype and substrate orientation was verified. Role of principal process conditi
Autor:
Benjamin Damilano, Samuel Matta, Ryszard Piotrzkowski, Elzbieta Litwin-Staszewska, Mathieu Leroux, Leszek Konczewicz, Sylvie Contreras, Sandrine Juillaguet, Julien Brault, Hervé Peyre, M. Al Khalfioui
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2020, 128 (8), pp.085703. ⟨10.1063/1.5140561⟩
Journal of Applied Physics, American Institute of Physics, 2020, 128 (8), pp.085703. ⟨10.1063/1.5140561⟩
International audience; This paper discusses the results of high temperature resistivity and Hall effect studies of Mg-doped GaN and AlxGa1−xN epilayers (0.05
Autor:
Marc Portail, Pawel Kwasnicki, Marcin Zielinski, Thierry Chassagne, Sandrine Juillaguet, Adrien Michon, Roxana Arvinte, Hervé Peyre
Publikováno v:
Materials Science Forum. :149-152
An exhaustive experimental study of the influence of C/Si ratio on voluntary incorporation of nitrogen (N) and aluminum (Al) in 4H-SiC thin films is presented. The films were grown by chemical vapor deposition (CVD) in a horizontal, hot wall CVD reac
Autor:
Gediminas Liaugaudas, Marcin Zielinski, Pawel Kwasnicki, Roxana Arvinte, Sandrine Juillaguet, Donatas Dargis, Kęstutis Jarašiūnas, Hervé Peyre
Publikováno v:
Material Sciences Forum
ECSCRM
ECSCRM, Oct 2014, Miyasaki, Japan. pp.249-252
ECSCRM
ECSCRM, Oct 2014, Miyasaki, Japan. pp.249-252
A series of aluminium doped (from 2×1016to 8×1019cm-3) 4H-SiC epitaxial layers were mainly studied by Low Temperature Photoluminescence and time-resolved optical pump-probe techniques to determine the concentration of aluminium, its activation rati