Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Sandra Veljković"'
Autor:
Emilija Živanović, Sandra Veljković, Nikola Mitrović, Igor Jovanović, Snežana Djorić-Veljković, Albena Paskaleva, Dencho Spassov, Danijel Danković
Publikováno v:
Micromachines, Vol 15, Iss 4, p 503 (2024)
This study aimed to comprehensively understand the performance and degradation of both p- and n-channel vertical double diffused MOS (VDMOS) transistors under bias temperature stress. Conducted experimental investigations involved various stress cond
Externí odkaz:
https://doaj.org/article/4c38e9ee2e2f4aa592f53f50b5da0cb7
Publikováno v:
Electronics; Volume 11; Issue 15; Pages: 2447
The results presented in this article relate to the study of the impact of gamma radiation on the breakdown voltage of gas-filled surge arrester manufactured by CITEL, Littelfuse and EPCOS at an operating voltage of 230 V. Radium was considered as a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02da6a5b10a6f022e573d0ced3f7bcab
Autor:
Sandra Veljković, Nikola Mitrović, Vojkan Davidović, Snežana Golubović, Snežana Djorić-Veljković, Albena Paskaleva, Dencho Spassov, Srboljub Stanković, Marko Andjelković, Zoran Prijić, Ivica Manić, Aneta Prijić, Goran Ristić, Danijel Danković
Publikováno v:
Journal of Circuits, Systems and Computers. 31
In this paper, the effects of successively applied static/pulsed negative bias temperature (NBT) stress and irradiation on commercial p-channel power vertical double-diffused metal-oxide semiconductor (VDMOS) transistors are investigated. To further
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::367eaefc742e7ecd853cd9c325c8e9bb
https://doi.org/10.1142/s0218126622400035
https://doi.org/10.1142/s0218126622400035
Autor:
Hans J. Fecht, Vesna Paunović, Sandra Veljković, Vojislav V. Mitić, Goran Lazovic, Marcus Mohr
Publikováno v:
Serbian Journal of Electrical Engineering, Vol 17, Iss 1, Pp 111-129 (2020)
Serbian Journal of Electrical Engineering (2020) 17(1):111-129
Serbian Journal of Electrical Engineering
Serbian Journal of Electrical Engineering (2020) 17(1):111-129
Serbian Journal of Electrical Engineering
There is a progressing interests for polycrystalline diamonds and they have been more extensively used recently. This area has been intensively researched due to the outstanding potential of this material, and this necessitated presenting some of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7217f65f34863bd5e94c7c158ae16069
https://doi.org/10.2298/sjee2001111v
https://doi.org/10.2298/sjee2001111v
Autor:
Nikola Mitrović, Sandra Veljković, Vojkan Davidović, Snežana Đorić Veljković, Snežana Golubović, Emilija Živanović, Zoran Prijić, Danijel Danković
Publikováno v:
Book of Abstracts.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b11740aac27ebc3657542e96d5bdb86
https://doi.org/10.21175/rad.spr.abstr.book.2022.27.10
https://doi.org/10.21175/rad.spr.abstr.book.2022.27.10
Autor:
Sandra Veljković, Stefan D. Ilić, Russell Duane, Marko S. Anđelković, Alberto J. Palma, Goran S. Ristić
Publikováno v:
Book of Abstracts.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71d564b8337898a61970b6644c847aeb
https://doi.org/10.21175/rad.spr.abstr.book.2022.26.13
https://doi.org/10.21175/rad.spr.abstr.book.2022.26.13
Publikováno v:
2021 15th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3a1dba410f4dbe917a559a3c0480ef6
https://doi.org/10.1109/telsiks52058.2021.9606244
https://doi.org/10.1109/telsiks52058.2021.9606244
Autor:
Danijel Dankovic, Snežana Golubović, S. Djoric-Veljkovic, Nikola Mitrovic, Vojkan Davidovic, Albena Paskaleva, Zoran Prijić, D. Spassov, Sandra Veljković
Publikováno v:
2021 IEEE 32nd International Conference on Microelectronics (MIEL).
This paper studies negative bias temperature instabilities in commercial IRF9520 p-channel power VDMOSFETs. Effects of these instabilities were extensively investigated under static and pulsed stressing conditions for various temperatures and voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cf36ab808e8efc3686fd97429605aa3
https://doi.org/10.1109/miel52794.2021.9569030
https://doi.org/10.1109/miel52794.2021.9569030
Autor:
A. S. Jevtic, Marko Andjelkovic, Srboljub Stanković, Alberto J. Palma, S. Dimitrijevic, Stefan Ilić, Sandra Veljković, Goran S. Ristić
Publikováno v:
2021 IEEE 32nd International Conference on Microelectronics (MIEL)
The effect of X-rays on the p-channel power vertical double diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) was investigated. The VDMOSFETs were irradiated without gate polarization using three different Xray beams. Due to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e55d502f6f3fa1b23648b8a71a03503
https://vinar.vin.bg.ac.rs/handle/123456789/10021
https://vinar.vin.bg.ac.rs/handle/123456789/10021
Autor:
Goran S. Ristić, Stefan D. Ilić, Sandra Veljković, Aleksandar S. Jevtić, Strahinja Dimitrijević, Alberto J. Palma, Srboljub Stanković, Marko S. Andjelković
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
instname
Electronics
instname
Electronics
This research was funded by the European Union's Horizon 2020 research and innovation programme under grant agreement No. 857558, and the Ministry of Education, Science, and Technological Development of the Republic of Serbia under the project No. 43
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a9595bfb9ec729e2f59a4337a30be08
https://doi.org/10.3390/electronics11060918
https://doi.org/10.3390/electronics11060918